Multi-element memory device with power for individual elements
A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.
1. A memory device comprising:
a plurality of integrated circuit memory dies arranged in a stack configuration, each memory die of the plurality of integrated circuit memory dies having an array of dynamic random access (DRAM) memory cells;
one or more command interfaces to receive commands associated with memory access to the memory cells of the plurality of integrated circuit memory dies; and
a sideband interface to receive mode signals that selectively transition the one or more command interfaces to a power state in which the one or more command interfaces do not respond to memory access commands.
2. The memory device of claim 1 , wherein:
the mode signals are received at a power mode terminal of the sideband interface from a host device.
3. The memory device of claim 1 , wherein:
the mode signals comprise a single power mode signal that is multi-drop and coupled to all the memory dies of the plurality of integrated circuit memory dies.
4. The memory device of claim 3 , wherein:
a host device determines an element selection value to be sent concurrently with the single power mode signal to identify a specific memory die of the plurality of integrated circuit memory dies in order to transition a power state of a command interface of the specific memory die.
5. The memory device of claim 3 , wherein:
the sideband interface is further configured to receive from a host device one or more timing signals determined by the host device to enable control of a specific memory die by assigning a specific time slot to the specific memory die of the plurality of integrated circuit memory dies.
6. The memory device of claim 1 , wherein:
the mode signals comprise one or more power mode signals;
the sideband interface is configured to enable a host system external to the memory device to set a first control value in the memory device; and
in accordance with the first control value, the one or more power mode signals transition the one or more command interfaces to a power state in which the one or more command interfaces do not respond to memory access commands.
7. The memory device of claim 6 , wherein:
the one or more command interfaces comprise one or more command interface circuits; and
the one or more power mode signals selectively transition the one or more command interfaces by transitioning the one or more command interface circuits to a power state in which the one or more command interface circuits do not respond to memory access commands when the first control value is equal to a first predefined default value.
8. The memory device of claim 6 , wherein:
the one or more power mode signals are multi-drop and coupled to more than one memory die of the plurality of integrated circuit memory dies.
9. The memory device of claim 6 , wherein:
the sideband interface is configured such that a separate power mode signal is coupled to a specific memory die of the plurality of integrated circuit memory dies in order to transition a power state of a command interface of the specific memory die of the plurality of integrated circuit memory dies.
10. A method of operating a memory device, the memory device comprising:
a plurality of integrated circuit memory dies arranged in a stack configuration, each memory die of the plurality of integrated circuit memory dies having an array of dynamic random access (DRAM) memory cells;
the method comprising, at the memory device:
receiving commands at one or more command interfaces of the memory device, wherein the commands are associated with memory access to the memory cells of the plurality of integrated circuit memory dies; and
receiving mode signals at a sideband interface of the memory device, wherein the mode signals selectively transition the one or more command interfaces to a power state in which the one or more command interfaces do not respond to memory access commands.
11. The method of claim 10 , further comprising:
receiving the mode signals comprises receiving a power mode signal that is multi-drop and coupled to all the memory dies of the plurality of integrated circuit memory dies.
12. The method of claim 11 , further comprising:
determining by a host device an element selection value to be sent concurrently with the power mode signal to identify a specific memory die of the plurality of integrated circuit memory dies in order to transition a power state of a command interface of the specific memory die.
13. The method of claim 10 , further comprising:
receiving the mode signals from a host device at a power mode terminal of the sideband interface of the memory device.
14. The method of claim 10 , further comprising:
receiving the mode signals includes receiving power mode signals;
enabling a host system external to the memory device to set a first control value in the memory device; and
in accordance with the first control value, in response to the power mode signals, transitioning the one or more command interfaces to a power state in which the one or more command interfaces does not respond to memory access commands.
15. The method of claim 14 , further comprising:
in response to receiving the power mode signals, selectively transitioning the one or more command interfaces, the one or more command interfaces comprising one or more command interface circuits, to a power state in which the one or more command interface circuits do not respond to memory access commands when the first control value is equal to a first predefined default value.
16. The method of claim 14 , further comprising:
receiving the power mode signals in a multi-drop configuration coupled to more than one memory die of the plurality of integrated circuit memory dies.
17. The method of claim 14 , including:
receiving at the sideband interface a separate power mode signal coupled to a specific memory die of the plurality of integrated circuit memory dies in order to transition a power state of a command interface of the specific memory die of the plurality of integrated circuit memory dies.
18. A multi-element memory device comprising:
a plurality of integrated circuit memory dies arranged in a stack configuration, each memory die of the plurality of integrated circuit memory dies having an array of dynamic random access (DRAM) memory cells;
one or more command interfaces to receive commands associated with memory access to the memory cells of the plurality of integrated circuit memory dies; and
means separate from the one or more command interfaces to receive mode signals that selectively transition the one or more command interfaces to a power state in which the one or more command interfaces does not respond to memory access commands.