Electrode structure and manufacturing method thereof
View Patent ↗A method for manufacturing an electrode structure is provided. The method for manufacturing an electrode structure comprises the steps of: preparing a base substrate; forming an amorphous seed layer covering the base substrate; crystallizing the seed layer; and covering the crystallized seed layer and forming a functional film for a secondary battery inherently having a crystalline structure.
1. A method of manufacturing an electrode structure, the method comprising:
preparing a base substrate;
forming an amorphous seed layer covering the base substrate;
crystallizing the amorphous seed layer to produce a crystallized seed layer;
providing a first reducing metal precursor on the crystallized seed layer to remove a first native oxide film formed on the crystallized seed layer; and
after providing the first reducing metal precursor on the crystallized seed layer, forming a functional film for a secondary battery, which covers the crystallized seed layer and has a crystalline structure.
2. The method of claim 1 , wherein, after preparing the base substrate and before forming the amorphous seed layer, the method further comprises providing a second reducing metal precursor on the base substrate to remove a second native oxide film formed on the base substrate.
3. The method of claim 2 , wherein a reducing metal of the second reducing metal precursor remains on a surface of the base substrate from which the second native oxide film is removed.
4. The method of claim 1 , wherein the first reducing metal precursor remains on a surface of the crystallized seed layer from which the first native oxide film is removed.
5. The method of claim 2 , wherein the second reducing metal precursor includes trimethylaluminum (TMA).
6. The method of claim 1 , wherein
crystallizing the amorphous seed layer includes:
covering the amorphous seed layer with a barrier sheet, and
annealing the amorphous seed layer covered with the barrier sheet, and
the barrier sheet is configured to reduce a leakage of a metal inside the amorphous seed layer to an outside of the amorphous seed layer while annealing the amorphous seed layer.
7. The method of claim 1 , wherein
forming the amorphous seed layer is performed in a chamber, and crystallizing the amorphous seed layer is performed in a furnace,
a native by-product layer is formed on the amorphous seed layer in a process of transferring the amorphous seed layer from the chamber to the furnace, and
the native by-product layer is removed as the amorphous seed layer is crystallized.
8. The method of claim 7 , wherein the native by-product layer includes a compound of a metal, carbon, and oxygen.
9. The method of claim 1 , wherein forming the amorphous seed layer includes:
providing a first precursor including a first metal on the base substrate, and providing a first reaction source on the base substrate on which the first precursor is provided to form a first seed layer obtained by allowing the first precursor and the first reaction source to react with each other; and
providing a second precursor including a second metal on the first seed layer, and providing a second reaction source on the first seed layer on which the second precursor is provided to form a second seed layer obtained by allowing the second precursor and the second reaction source to react with each other.
10. The method of claim 9 , wherein each of the first metal and the second metal includes one of lithium (Li), cobalt (Co), lanthanum (La), zirconium (Zr), or titanium (Ti).
11. The method of claim 1 , wherein the first reducing metal precursor includes trimethylaluminum (TMA).
12. The method of claim 1 , wherein a reducing metal of the first reducing metal precursor remains on a surface of the crystallized seed layer from which the first native oxide film is removed.