IP Library › Granted Patent US 12,334,882
Granted Patent B2
US 12,334,882 · App. 17/374,403 · Granted Jun 17, 2025

Radio-frequency amplifier circuit

Inventors: Takayuki Tsutsui (Kyoto, JP); Satoshi Tanaka (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03F3/211H03F1/56H03F2200/222H03F2200/451
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Quick Facts
Patent No.
US 12,334,882
App. No.
17/374,403
Granted
Jun 17, 2025
Kind
B2
Abstract

A radio-frequency amplifier circuit includes a first amplifier transistor configured to amplify and output a radio-frequency signal supplied to a base of the first amplifier transistor, a first bias transistor that is connected to the first amplifier transistor to form a current mirror and configured to supply a bias to the base of the first amplifier transistor, a second bias transistor that is connected to the base of the first amplifier transistor to form an emitter follower and configured to supply a bias to the base of the first amplifier transistor, and a first capacitor having a first end connected to the base of the first amplifier transistor and a second end connected to an emitter of the second bias transistor.

Claims (18)

1. A radio-frequency amplifier circuit comprising:

a first amplifier transistor configured to amplify and output a radio-frequency signal supplied to a base of the first amplifier transistor;

a first bias transistor that is connected to the first amplifier transistor, thereby forming a current mirror, and that is configured to supply a first bias to the base of the first amplifier transistor;

a second bias transistor that is connected to the base of the first amplifier transistor via a bias supply node, thereby forming an emitter follower, and that is configured to supply a second bias to the base of the first amplifier transistor; and

a first capacitor having a first end connected to the base of the first amplifier transistor and a second end connected to an emitter of the second bias transistor via the bias supply node,

wherein a part of the radio-frequency signal is supplied to the bias supply node via the first capacitor.

2. The radio-frequency amplifier circuit according to claim 1 , further comprising a first resistance element connected between the base of the first bias transistor and the emitter of the second bias transistor.

3. The radio-frequency amplifier circuit according to claim 2 , wherein a resistance value of the first resistance element is from 30 Ω to 800 Ω.

4. The radio-frequency amplifier circuit according to claim 1 , further comprising an amplifier connected between the first end of the first capacitor and the base of the first amplifier transistor.

5. The radio-frequency amplifier circuit according to claim 2 , further comprising an amplifier connected between the first end of the first capacitor and the base of the first amplifier transistor.

6. The radio-frequency amplifier circuit according to claim 3 , further comprising an amplifier connected between the first end of the first capacitor and the base of the first amplifier transistor.

7. The radio-frequency amplifier circuit according to claim 1 , further comprising:

a second amplifier transistor configured to amplify a radio-frequency signal input to a base of the second amplifier transistor, and to output the amplified signal to the base of the first amplifier transistor;

a third bias transistor that is connected to the second amplifier transistor, thereby forming a second current mirror, and that is configured to supply a third bias to the base of the second amplifier transistor;

a fourth bias transistor that is connected to the base of the second amplifier transistor, thereby forming a second emitter follower, and that is configured to supply a fourth bias to the base of the second amplifier transistor; and

a second capacitor having a first end connected to the base of the second amplifier transistor and a second end connected to an emitter of the fourth bias transistor.

8. The radio-frequency amplifier circuit according to claim 7 , further comprising a second resistance element connected between a base of the third bias transistor and the emitter of the fourth bias transistor.

9. The radio-frequency amplifier circuit according to claim 8 , wherein a resistance value of the second resistance element is from 30 Ω to 800 Ω.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2021
From: TSUTSUI, TAKAYUKI; TANAKA, SATOSHI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 056847/0852 →
Priority Claims (1)
JP 2020-141019 · Aug 24, 2020 · national
Continuity (1)
Related Publication 20220060157A1 · Feb 24, 2022
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