Memory and forming method thereof

1. A method of forming a memory, comprising:

forming a stacked layer on a surface of a substrate, the stacked layer comprising interlayer isolation layers arranged at intervals in a first direction and a sacrificial layer group located between adjacent two of the interlayer isolation layers, the sacrificial layer group comprising a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer sequentially stacked in the first direction, and the stacked layer comprising a transistor region, wherein the first direction is a direction perpendicular to a top surface of the substrate;

removing the second sacrificial layers in the transistor region, and forming first gaps; and

forming a gate layer and a channel layer wrapping the gate layer in each of the first gaps.

2. The method of forming a memory according to claim 1 , wherein the first sacrificial layer and the third sacrificial layer are each made of a low-dielectric-constant material, and the second sacrificial layer is made of undoped polycrystalline silicon.

3. The method of forming a memory according to claim 1 , wherein the stacked layer further comprises a bit line region located on a side of the transistor region in a second direction, and the second direction is a direction parallel to the top surface of the substrate; and the forming first gaps comprises:

removing the second sacrificial layers in the bit line region and the transistor region, and forming first trenches;

forming a filling layer filling up the first trenches;

removing the filling layer, the first sacrificial layers, and the third sacrificial layers in the bit line region, and forming second trenches;

forming a first isolation layer filling up the second trenches; and

removing the filling layer in the transistor region, and forming the first gaps.

4. The method of forming a memory according to claim 3 , wherein the removing the filling layer, the first sacrificial layers, and the third sacrificial layers in the bit line region, and forming second trenches comprises:

removing the filling layer, the first sacrificial layers, and the third sacrificial layers in the bit line region by using a lateral etching process.

5. The method of forming a memory according to claim 1 , wherein the forming a gate layer and a channel layer wrapping the gate layer in each of the first gaps comprises:

forming a channel layer covering an inner wall of the first gap;

forming a gate dielectric layer covering a surface of the channel layer in each of the first gaps; and

forming a gate layer covering a surface of the gate dielectric layer in each of the first gaps.

6. The method of forming a memory according to claim 3 , after the gate layer and the channel layer wrapping the gate layer are formed in each of the first gaps, the method further comprises:

removing the first isolation layer and the interlayer isolation layers in the bit line region, and forming second gaps exposing first end portions of the channel layers; and

forming, in each of the second gaps, a source electrode covering the first end portion of the channel layer, and a bit line extending in the first direction, the bit line continuously covering surfaces of source electrodes arranged at intervals in the first direction.

7. The method of forming a memory according to claim 6 , after the gate layer and the channel layer wrapping the gate layer are formed in each of the first gaps, the method further comprises:

removing the first isolation layer and the interlayer isolation layers in the bit line region, and removing a part of each of the first sacrificial layers, a part of each of the third sacrificial layers, and a part of each of the interlayer isolation layers in the transistor region, and forming second gaps exposing the channel layers; and

forming, in each of the second gaps, a source electrode covering the first end portion of the channel layer, and a bit line extending in the first direction, the bit line continuously covering surfaces of source electrodes arranged at intervals in the first direction.

8. The method of forming a memory according to claim 6 , wherein the stacked layer further comprises a capacitor region, and the capacitor region and the bit line region are arranged on two opposite sides of the transistor region in the second direction; and after the gate layer and the channel layer wrapping the gate layer are formed in each of the first gaps, the method further comprises:

removing the sacrificial layer groups in the capacitor region, and forming third gaps exposing second end portions of the channel layers, the second end portion and the first end portion being oppositely distributed in the second direction; and

forming, in each of the third gaps, a drain electrode covering the second end portion of the channel layer, and a capacitor in contact and electric connection with the drain electrode.

9. The method of forming a memory according to claim 6 , wherein the stacked layer further comprises a capacitor region, and the capacitor region and the bit line region are arranged on two opposite sides of the transistor region in the second direction; and after the gate layer and the channel layer wrapping the gate layer are formed in each of the first gaps, the method further comprises:

removing the sacrificial layer groups in the capacitor region, and removing a part of each of the first sacrificial layers and a part of each of the third sacrificial layers in the transistor region, and forming third gaps exposing second end portions of the channel layers, the second end portion and the first end portion being oppositely distributed in the second direction; and

forming, in each of the third gaps, a drain electrode covering the second end portion of the channel layer, and a capacitor in contact and electric connection with the drain electrode.

10. The method of forming a memory according to claim 1 , wherein the channel layer is made of an oxide semiconductor material.