Semiconductor die having a sodium stopper in an insulation layer groove and method of manufacturing the same
The application relates to a semiconductor die having a semiconductor body including an active region, an insulation layer on the semiconductor body, and a sodium stopper formed in the insulation layer. The sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends around the active region. The sodium stopper is formed of a tungsten material that at least partly fills the insulation layer groove. Both the insulation layer groove and the tungsten material extend into the semiconductor body.
1. A semiconductor die, comprising:
a semiconductor body comprising an active region and an edge termination region;
an insulation layer on the semiconductor body; and
a sodium stopper formed in the insulation layer,
wherein the sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends uninterrupted around the active region,
wherein the sodium stopper is formed of a tungsten material that at least partly fills the insulation layer groove,
wherein both the insulation layer groove and the tungsten material extend into the semiconductor body.
2. The semiconductor die of claim 1 , further comprising:
a metallization layer on a frontside of the insulation layer,
wherein the metallization layer covers at least a section of the insulation layer groove and is formed of a tungsten material.
3. The semiconductor die of claim 2 , further comprising:
a passivation layer covering the metallization layer.
4. The semiconductor die of claim 1 , wherein the tungsten material that at least partly fills the insulation layer groove also forms a drain contact electrically connected to a drain region formed at least in the active region of the semiconductor body.
5. The semiconductor die of claim 1 , further comprising:
a trench extending vertically into the semiconductor body,
wherein the trench is arranged laterally between the sodium stopper and a lateral edge of the semiconductor die.
6. The semiconductor die of claim 1 , further comprising:
a chipping stopper in a chipping stopper trench extending vertically into the semiconductor body.
7. The semiconductor die of claim 6 , wherein the chipping stopper trench is filled with an electrically conductive material and serves also as a channel stopper.
8. The semiconductor die of claim 5 , further comprising:
a vertical groove intersecting the insulation layer above the trench,
wherein the vertical groove serves as a peeling stopper.
9. The semiconductor die of claim 1 , further comprising:
a channel stopper in a channel stopper trench extending vertically into the semiconductor body; and
a chipping stopper in a chipping stopper trench extending vertically into the semiconductor body,
wherein the channel stopper is arranged laterally between the sodium stopper and a lateral edge of the semiconductor die.
10. The semiconductor die of claim 1 , wherein the sodium stopper forms a contact with the semiconductor body.
11. The semiconductor die of claim 1 , wherein the sodium stopper is covered and contacted by a passivation layer.
12. The semiconductor die of claim 1 , wherein the tungsten material only partly fills the insulation layer groove.
13. A semiconductor wafer, comprising:
a semiconductor body comprising a first active region and a second active region;
an insulation layer on the semiconductor body;
a dicing region formed laterally between the first active region and the second active region;
a first sodium stopper and a second sodium stopper formed in the insulation layer,
wherein the first sodium stopper is arranged in a first insulation layer groove which intersects the insulation layer vertically and extends uninterrupted around the first active region,
wherein the second sodium stopper is arranged in a second insulation layer groove which intersects the insulation layer vertically and extends uninterrupted around the second active region,
wherein the first sodium stopper is formed of a tungsten material that at least partly fills the first insulation layer groove,
wherein the second sodium stopper is formed of a tungsten material that at least partly fills the second insulation layer groove,
wherein both the first insulation layer groove and the tungsten material that at least partly fills the first insulation layer groove extend into the semiconductor body,
wherein both the second insulation layer groove and the tungsten material that at least partly fills the second insulation layer groove extend into the semiconductor body.
14. The semiconductor wafer of claim 13 , further comprising:
a first trench and a second trench arranged in the dicing region,
wherein the first trench extends deeper into the semiconductor body than the second trench.
15. The semiconductor wafer of claim 14 , wherein the first trench has the same depth as field electrode trenches formed in the first active region and the second active region, and wherein the second trench has the same depth as gate trenches formed in the first active region and the second active region.
16. The semiconductor wafer of claim 14 , wherein the first trench is a needle trench and the second trench is a longitudinal trench surrounding the needle trench.
17. The semiconductor die of claim 2 , wherein the metallization layer is in contact with the tungsten material in the insulation layer groove.
18. The semiconductor die of claim 17 , further comprising:
a passivation layer covering the metallization layer.
19. The semiconductor die of claim 17 , wherein the tungsten material in the insulation layer groove extends from a first sidewall of the insulation layer groove to a second sidewall of the insulation layer groove.
20. The semiconductor die of claim 1 , further comprising:
a first trench arranged in the edge termination region and extending vertically into the semiconductor body; and
a second trench arranged in the edge termination region and extending vertically into the semiconductor body,
wherein the sodium stopper is arranged between the first trench and the second trench, and
wherein the sodium stopper is at least partly isolated from the first trench and the second trench.
21. The semiconductor die of claim 1 , wherein the active region comprises a plurality of cells, each cell comprising a field electrode trench formed as a needle trench.
22. The semiconductor die of claim 1 , wherein the tungsten material extends above the insulation layer.
23. The semiconductor die of claim 1 , wherein the tungsten material spans at least a bottom of the insulation layer groove.