Amorphous or nanocrystalline molybdenum nitride and silicon nitride multilayers
A multilayer film structure, and method of making such a multilayer film structure, which includes a first layer consisting essentially of a first material and a second layer consisting essentially of a second material. In embodiments, the multilayer film structure includes a plurality of first layers alternating with a plurality of second layers. The layers are constructed by applying a N 2 -based reactive sputtering methodology so that the layers maintain a largely amorphous microstructure and a stable and high reflectivity upon annealing at temperatures up to 800° C. for 1 hour.
1. A product, comprising:
a first layer consisting essentially of Mo 1-x N x , where x=greater than 0 to 0.8; and
a second layer formed directly adjacent the first layer, the second layer consisting essentially of Si 1-y N y , where y=greater than 0 to 0.8,
wherein the first layer is substantially amorphous or is substantially nanocrystalline,
wherein the first layer and the second layer form a set having an interface therebetween, wherein a plurality of sets is present in a laminate of the sets.
2. The product as recited in claim 1 , wherein x=0.2 to 0.6, wherein y=0.2 to 0.6.
3. The product as recited in claim 1 , wherein the first layer and the second layer are each substantially amorphous.
4. The product as recited in claim 1 , wherein the first layer and the second layer are each characterized as maintaining a substantially amorphous nature upon annealing at 800° C. for 1 hour.
5. The product as recited in claim 1 , wherein the first layer and the second layer are each characterized as exhibiting a nominal change in reflectivity upon annealing at 800° C. for 1 hour.
6. The product as recited in claim 1 , wherein a nitrogen concentration in one of the layers varies along a thickness thereof according to a predefined gradient.
7. The product as recited in claim 1 , wherein the first layer is substantially amorphous, wherein the first layer and the second layer are each characterized as exhibiting a nominal change in reflectivity upon annealing at 800° C. for 1 hour.
8. The product as recited in claim 1 , wherein a nitrogen concentration in one of the layers of a first of the sets is different than a nitrogen concentration in a corresponding layer of a second of the sets.
9. A product, comprising:
a layer positioned directly on a previously-formed top surface of a second layer, the layer consisting essentially of Mo 1-x N x , where x=greater than 0.1 to 0.8, the second layer having a different composition than Mo,
wherein the layer is characterized by exhibiting a nominal change in reflectivity upon annealing at 800° C. for 1 hour,
wherein the layer is substantially amorphous,
wherein the second layer is characterized by maintaining a substantially amorphous nature upon annealing at 800° C. for 1 hour.
10. The product as recited in claim 9 , wherein x=0.2 to 0.6, wherein an interface of the layer and the second layer is defined by the previously-formed top surface of the second layer, wherein the second layer is a sputtered layer.
11. The product as recited in claim 9 , comprising a laminate of discrete ones of the layers and second layers formed in sequence and in direct contact with each other, wherein the layer has physical characteristics of formation of growth in a direction away from the previously-formed top surface of the second layer.
12. The product as recited in claim 9 , wherein the layer is characterized by maintaining a substantially amorphous nature upon annealing at 800° C. for 1 hour, wherein the second layer consists of a material other than Mo.
13. The product as recited in claim 9 , wherein a nitrogen concentration in the layer varies along a thickness thereof according to a predefined gradient.
14. The product as recited in claim 9 , comprising:
the second layer positioned directly adjacent the layer, the second layer consisting essentially of Si 1-y N y , where y=greater than 0 to 0.8,
wherein the layer and the second layer form a set having an interface therebetween,
wherein a plurality of sets is present in a laminate of the sets.
15. A product, comprising:
a set of laminated first and second layers arranged in an alternating fashion,
the first layers consisting essentially of Mo 1-x N x , where x=greater than 0 to 0.8; and
the second layers consisting essentially of Si 1-y N y , where y=greater than 0 to 0.8,
wherein the set of laminated first and second layers is characterized as having greater than 50% reflectivity of light in the extreme ultraviolet range at near-normal incidence,
wherein the set of laminated first and second layers is characterized by exhibiting a nominal change in reflectivity upon annealing at 800° C. for 1 hour,
wherein the second layers are characterized by maintaining a substantially amorphous nature upon annealing at 800° C. for 1 hour.
16. The product as recited in claim 15 , wherein y=0.2 to 0.6, wherein the layers in the set are directly adjacent one another at all points therealong.
17. The product as recited in claim 15 , wherein y=greater than 0 to 0.4.
18. The product as recited in claim 15 , wherein the second layers are sputtered layers.
19. The product as recited in claim 15 , wherein a nitrogen concentration in one or more of the second layers varies along a thickness thereof according to a predefined gradient.
20. A method, comprising:
forming a first layer and a second layer using a magnetron sputtering machine,
wherein the first layer consists essentially of Mo 1-x N x , where x=greater than 0 to 0.8,
wherein the second layer consists essentially of Si 1-y N y , where y=greater than 0 to 0.8,
wherein the first layer and the second layer are each characterized as maintaining a substantially amorphous nature upon annealing at 800° C. for 1 hour.
21. The method as recited in claim 20 , wherein the first layer and the second layer form a set having an interface therebetween, wherein a plurality of sets is present in a laminate of the sets, wherein a nitrogen concentration in one of the layers of a first of the sets is different than a nitrogen concentration in a corresponding layer of a second of the sets, wherein the first and second layers are substantially amorphous as formed.