Materials and processes for generating radioisotopes
The present disclosure generally relates to materials, processes, generators, and/or systems, for generating radioisotope. The present disclosure also generally relates to ceramic materials comprising radioisotope suitable for use in a radioisotope generator. The present disclosure also generally relates to processes, generators and/or systems, for producing and capturing radioisotope. The present disclosure also generally relates to the preparation of radioisotope solutions for use in radiopharmacy and/or other clinical applications.
1. A 220 Rn emanating tantalum oxide substrate comprising a 228Th oxide layer disposed on and as a part of a surface of the tantalum oxide substrate, where the 228Th oxide layer permits emanation from the surface of the tantalum oxide substrate of gaseous 220 Rn produced by radioactive decay of 228 Th in the 228 Th oxide layer.
2. The tantalum oxide substrate of claim 1 , wherein the 228 Th oxide layer is associated with the tantalum oxide substrate such that the emanating gaseous 220 Rn contains less than 0.1% 228 Th as a contaminant.
3. The tantalum oxide substrate of claim 1 , wherein the 228 Th oxide layer contains at least 200 MBq of 228 Th.
4. The tantalum oxide substrate of claim 3 , wherein the 228 Th oxide layer contains at least 500 MBq of 228 Th.
5. The tantalum oxide substrate of claim 4 , wherein the 228 Th oxide layer contains at least 1000 MBq of 228 Th.
6. The tantalum oxide substrate of claim 1 , wherein the tantalum oxide substrate has a porosity in volume percentage of total volume of the tantalum oxide substrate of less than 10%.
7. The tantalum oxide substrate of claim 6 , wherein the tantalum oxide substrate has a porosity in volume percentage of total volume of the tantalum oxide substrate of less than 5%.
8. The tantalum oxide substrate of claim 1 , wherein the 228 Th oxide layer has an average activity of at least 10 MBq per cm 2 .
9. The tantalum oxide substrate of claim 8 , wherein the 228 Th oxide layer has an average activity of at least 100 MBq per cm 2 .
10. The tantalum oxide substrate of claim 1 , wherein at least a portion of 228 Th atoms from the 228 Th oxide layer have exchanged with tantalum atoms in the tantalum oxide substrate and have become immobilized therein.
11. The tantalum oxide substrate of claim 10 , wherein the 228 Th oxide layer is formed by applying an aqueous solution of 228 Th to the tantalum oxide substrate and heating the aqueous solution and tantalum oxide substrate to convert the 228 Th in aqueous solution to 228 Th oxide.
12. The tantalum oxide substrate of claim 11 , wherein the aqueous solution of 228 Th is 228 Th nitrate.
13. The tantalum oxide substrate of claim 1 , wherein the substrate has a substantially planar surface on which the 228 Th oxide layer is disposed.
14. A 220 Rn emanating tantalum oxide substrate comprising a 228 Th oxide layer, containing at least 200 MBq of 228 Th, disposed on and as a part of a surface of the tantalum oxide substrate, where the 228 Th oxide layer permits emanation from the surface of the tantalum oxide substrate of gaseous 22 Rn produced by radioactive decay of 228 Th in the 228 Th oxide layer, and the 228 Th oxide layer is associated with the tantalum oxide substrate through 228 Th migration into the tantalum oxide substrate such that the emanating gaseous 220 Rn contains less than 0.1% 228 Th as a contaminant.
15. The tantalum oxide substrate of claim 14 , wherein the 228 Th oxide layer contains at least 500 MBq of 228 Th.
16. The tantalum oxide substrate of claim 15 , wherein the 228 Th oxide layer contains at least 1000 MBq of 228 Th.
17. The tantalum oxide substrate of claim 14 , wherein the tantalum oxide substrate has a porosity in volume percentage of total volume of the tantalum oxide substrate of less than 10%.
18. The tantalum oxide substrate of claim 14 , wherein the 228 Th oxide layer has an average activity of at least 10 MBq per cm 2 .
19. The tantalum oxide substrate of claim 18 , wherein the 228 Th oxide layer has an average activity of at least 100 MBq per cm 2 .
20. The tantalum oxide substrate of claim 14 , wherein the 228 Th oxide layer is formed by applying an aqueous solution of 228 Th to the tantalum oxide substrate and heating the aqueous solution and tantalum oxide substrate to convert the 228 Th in aqueous solution to 228 Th oxide.
21. The tantalum oxide substrate of claim 14 , wherein the substrate has a substantially planar surface on which the 228 Th oxide layer is disposed.
22. The tantalum oxide substrate of claim 1 , wherein the 228 Th oxide layer is immobilized on the surface of the tantalum oxide substrate.