Switches in bulk substrate
The present disclosure relates to semiconductor structures and, more particularly, to switches in a bulk substrate and methods of manufacture. The structure includes: at least one active device having a channel region of a first semiconductor material; a single air gap under the channel region of the at least one active device; and a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material.
1. A structure comprising:
at least one active device comprising a channel region of a first semiconductor material;
a single air gap under the channel region of the at least one active device and which is directly bounded from a bottom with a bulk semiconductor material;
insulator material sealing the single air gap; and
a second semiconductor material being coplanar with and laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the first semiconductor material,
wherein the first semiconductor material bounds the single air gap at the top, and the first semiconductor material and the second semiconductor material are located directly adjacent to the single air gap with no intervening structures.
2. The structure of claim 1 , wherein the at least one active device comprises a radio frequency (RF) switch.
3. The structure of claim 1 , wherein the at least one active device comprises a plurality of active devices and the single air gap is located under inner source/drain regions and the channel regions of the plurality of active devices.
4. The structure of claim 3 , wherein the second semiconductor material remains under outermost source/drain regions of the plurality of active devices at opposing ends of the single air gap.
5. The structure of claim 1 , further comprising shallow trench isolation structures comprising the insulator material, the shallow trench isolation structures extending within and below the single air gap such that the second semiconductor material is in between and directly contacts the shallow trench isolation structures and the single air gap.
6. The structure of claim 1 , further comprising epitaxial semiconductor material sealing the single air gap.
7. The structure of claim 1 , wherein the second semiconductor material comprises Ge containing semiconductor material and the first semiconductor material comprises single crystalline bulk substrate material.
8. The structure of claim 1 , wherein the second semiconductor material laterally bounds and supports the first semiconductor material at two opposing sides of the single air gap, the second semiconductor material comprises a thickness that is a height of the single air gap and the single air gap does not extend laterally beyond a patterned active shape of the at least one active device.
9. The structure of claim 1 , wherein the second semiconductor material remains under a body contact region of the at least one active device.
10. The structure of claim 1 , further comprising a dielectric material lining the single air gap.
11. A structure comprising:
a plurality of switches with channel regions in semiconductor material;
a single air gap under the channel regions and which is directly bounded from a bottom with a bulk semiconductor material;
insulator material sealing the single air gap; and
a second semiconductor material laterally bounding at least one side of the single air gap, the second semiconductor material being different material than the semiconductor material,
wherein the semiconductor material bounds the single air gap at the top, and the semiconductor material and the second semiconductor material are located directly adjacent to the single air gap with no intervening structures.
12. The structure of claim 11 , wherein the second semiconductor material comprises Ge and the semiconductor material comprises single crystalline Si.
13. The structure of claim 11 , wherein the single air gap is located under inner source/drain regions and the channel regions of the plurality of switches, and the second semiconductor material comprises a thickness that is a height of the single air gap.
14. The structure of claim 11 , wherein the second semiconductor material remains under outermost source/drain regions of the plurality of switches at opposing ends of the single air gap.
15. The structure of claim 11 , further comprising insulator material sealing the single air gap.
16. The structure of claim 11 , further comprising epitaxial semiconductor material sealing the single air gap.
17. The structure of claim 11 , further comprising shallow trench isolation structures extending within and below the single air gap.
18. The structure of claim 11 , further comprising an active device adjacent to the plurality of switches, the active device being devoid of an underlying air gap, wherein the second semiconductor material is under the active device.
19. A method comprising:
forming at least one active device comprising a channel region of a first semiconductor material;
forming an air gap under the channel region of the at least one active device; and which is directly bounded from a bottom with a bulk semiconductor material;
forming insulator material to seal the single air gap; and
forming a second semiconductor material being coplanar with and laterally bounding at least one side of the air gap, the second semiconductor material being different material than the first semiconductor material,
wherein the first semiconductor material bounds the single air gap at the top and the first semiconductor material and second semiconductor material are located directly adjacent to the single air gap with no intervening structures.