Plasma processing apparatus
A plasma processing apparatus includes a plasma processing chamber, a substrate support, a source RF generator, and a bias RF generator. The substrate support is disposed within the plasma processing chamber. The source RF generator is configured to generate a source RF signal. The source RF signal includes source cycles, and each of the source cycles includes a source ON state and a source OFF state. The source ON state has at least two source power levels. The bias RF generator is coupled to the substrate support and configured to generate a bias RF signal. The bias RF signal includes bias cycles corresponding to the source cycles, respectively. Each of the bias cycles includes a bias ON state and a bias OFF state. The bias ON state has at least two bias power levels.
1. A plasma processing apparatus comprising:
a controller;
a plasma processing chamber;
a substrate support disposed within the plasma processing chamber;
a source RF generator coupled to the plasma processing chamber, and the controller is configured to control the source RF generator to generate a source RF signal having a first source power level greater than 0 during a first period at each cycle, a second source power level different from the first source power level and greater than 0 during a second period subsequent to the first period at each cycle, the second source power level during a third period subsequent to the second period at each cycle, and a zero power level during a fourth period subsequent to the third period at each cycle; and
a bias RF generator coupled to the substrate support, and the controller is configured to control the bias RF generator to generate a bias RF signal having a zero power level during the first period, the zero power level during a delay time at the second period, a first bias power level greater than 0 during the second period excluding the delay time, a second bias power level different from the first bias power level and greater than 0 during the third period, the zero power level during the fourth period.
2. The plasma processing apparatus according to claim 1 , wherein the second source power level is lower than the first source power level.
3. The plasma processing apparatus according to claim 1 , wherein the second bias power level is lower than the first bias power level.
4. The plasma processing apparatus according to claim 1 , wherein the delay time starts at a transition from the first source power level to the second source power level and ends at a start of the first bias power level.