Granted Patent B2

US 12,347,726 · App. 17/710,531 · Granted Jul 1, 2025

Inventors: Wei-Ren Wang (New Taipei, TW); Jen Hung Wang (Hsinchu, TW); Tze-Liang Lee (Hsinchu, TW)

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.

H01L21/76832H01L21/76802H01L21/76831H01L21/7685H01L21/76879H10D30/6735H10D30/6757H10D62/118

Abstract

Claims (44)

1. A method comprising:

forming a first dielectric layer over an integrated circuit device;

forming a first conductive feature in the first dielectric layer;

selectively depositing an inhibitor material over the first conductive feature;

selectively depositing an etch-resistant layer over the first dielectric layer adjacent the inhibitor material;

removing the inhibitor material to form a first opening exposing the first conductive feature;

selectively depositing a capping layer over the first conductive feature;

forming an etch stop layer over the etch-resistant layer and the capping layer;

forming a second dielectric layer over the etch stop layer;

etching the second dielectric layer and the etch stop layer to form a second opening exposing the capping layer; and

forming a second conductive feature in the second opening and electrically coupled to the first conductive feature through the capping layer.

2. The method of claim 1 , wherein the inhibitor material comprises an organic polymer comprising 8 to 20 carbon atoms.

3. The method of claim 1 , wherein the etch-resistant layer is deposited to a thickness ranging from 10 Å to 30 Å.

4. The method of claim 1 , wherein the etch-resistant layer is selectively deposited before selectively depositing the capping layer.

5. The method of claim 1 , wherein the etch-resistant layer comprises a material selected from aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), silicon nitride (SiN), silicon carbonitride (SiCN), silicon oxycarbide (SiOC), boron nitride (BN), silicon boron nitride (SiBN), yttrium oxide (Y 2 O 3 ), or zirconium oxide (ZrO 2 ).

6. The method of claim 1 , wherein the capping layer comprises cobalt or ruthenium.

7. The method of claim 1 , wherein the capping layer is selectively deposited from a precursor comprising cyclopentadienylcobalt dicarbonyl, bis(cyclopentadienyl)cobalt (II) triruthenium dodecacarbonyl, bis(ethylcyclopentadienyl)ruthenium (II), or cyclopentadienyl ethyl (dicarbonyl) ruthenium.

8. A method comprising:

depositing an inhibitor material over and in contact with a first metal feature, wherein the first metal feature is disposed in a first dielectric layer;

depositing an etch-resistant layer over and in contact with the first dielectric layer, wherein the etch-resistant layer is deposited after depositing the inhibitor material;

removing the inhibitor material;

depositing a capping layer over and in contact with the first metal feature; and

forming a second metal feature over and in contact with the capping layer.

9. The method of claim 8 , wherein the inhibitor material is removed after depositing the etch-resistant layer.

10. The method of claim 9 , wherein the capping layer is deposited after depositing the etch-resistant layer and removing the inhibitor material.

11. The method of claim 8 , wherein the capping layer comprises cobalt or ruthenium.

12. The method of claim 8 , further comprising:

depositing an etch stop layer over the capping layer and the etch-resistant layer;

depositing a second dielectric layer over the etch stop layer; and

etching the second dielectric layer and the etch stop layer to form an opening exposing the capping layer, wherein the second metal feature is formed in the opening.

13. The method of claim 8 , wherein the inhibitor material, the etch-resistant layer, and the capping layer are deposited by selective deposition processes.

14. A method comprising:

providing a first conductive feature in a first dielectric layer;

selectively depositing an etch-resistant layer over the first dielectric layer, wherein a sidewall of the etch-resistant layer is coterminous with a sidewall of the first conductive feature;

after selectively depositing the etch-resistant layer, selectively depositing a capping layer over the first conductive feature adjacent the etch-resistant layer, wherein a sidewall of the capping layer is coterminous with the sidewall of the first conductive feature; and

forming a second conductive feature over the capping layer, wherein the etch-resistant layer separates the second conductive feature from the first dielectric layer.

15. The method of claim 14 , wherein the first conductive feature and the first dielectric layer are provided over a substrate, and wherein a distance between a top surface of the first conductive feature and the substrate is different from a distance between a top surface of the first dielectric layer and the substrate.

16. The method of claim 14 , wherein the capping layer is selectively deposited with a top surface level with a top surface of the etch-resistant layer.

17. The method of claim 14 , wherein the capping layer is selectively deposited with a top surface level with a top surface of the first dielectric layer.

18. The method of claim 14 , further comprising depositing an etch stop layer over the etch-resistant layer and the capping layer, wherein the etch stop layer extends along a top surface of the capping layer, a top surface of the etch-resistant layer, and side surfaces of the etch-resistant layer.

19. The method of claim 18 , further comprising:

depositing a second dielectric layer over the etch stop layer; and

etching the second dielectric layer and the etch stop layer to form an opening exposing the capping layer, wherein the second conductive feature is formed in the opening.

20. The method of claim 8 , wherein the inhibitor material comprises an organic polymer comprising 8 to 20 carbon atoms.

Assignments (1)

Continuity (2)

References Cited (17)