Semiconductor devices including a through-hole electrode
A semiconductor device includes a substrate, an etch stop layer on the substrate, a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and a conductive pad. The etch stop layer includes a first surface adjacent to the substrate and a second surface opposite the first surface. The through-hole electrode includes a protrusion portion that protrudes from the second surface of the etch stop layer. The conductive pad covers the protrusion portion of the through-hole electrode. The protrusion portion of the through-hole electrode is not flat.
1. A semiconductor device, comprising:
a substrate;
an etch stop layer on the substrate, the etch stop layer including a first surface adjacent to the substrate and a second surface opposite the first surface;
a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, the through-hole electrode including a protrusion portion that protrudes beyond the second surface of the etch stop layer, and the protrusion portion being not flat; and
a conductive pad covering the protrusion portion of the through-hole electrode,
wherein:
the through-hole electrode is a first through-hole electrode,
the protrusion portion of the first through-hole electrode is a first protrusion portion,
the semiconductor device further includes a second through-hole electrode extending through the substrate and the etch stop layer in the vertical direction, the second through-hole electrode having a width different from that of the first through-hole electrode and including a second protrusion portion that protrudes beyond the second surface of the etch stop layer, and
the second protrusion portion of the second through-hole electrode is not flat.
2. The semiconductor device as claimed in claim 1 , wherein the protrusion portion of the through-hole electrode is convex.
3. The semiconductor device as claimed in claim 1 , wherein the protrusion portion of the through-hole electrode is concave.
4. The semiconductor device as claimed in claim 1 , further comprising an insulation pattern covering a sidewall of the through-hole electrode, the through-hole electrode and the insulation pattern constituting a through-hole electrode structure.
5. The semiconductor device as claimed in claim 4 , wherein the insulation pattern covers a sidewall of the protrusion portion of the through-hole electrode.
6. The semiconductor device as claimed in claim 5 , wherein a portion of the insulation pattern covering the sidewall of the protrusion portion of the through-hole electrode has a slope with respect to the upper surface of the substrate that varies in a horizontal direction substantially parallel to the upper surface of the substrate.
7. The semiconductor device as claimed in claim 1 , wherein the conductive pad contacts the protrusion portion of the through-hole electrode, a portion of the conductive pad contacting the protrusion portion being not flat.
8. The semiconductor device as claimed in claim 1 , wherein the first protrusion portion and the second protrusion portion have a substantially same height.
9. The semiconductor device as claimed in claim 1 , wherein the first through-hole electrode and the second through-hole electrode have a substantially same height.
10. A semiconductor device, comprising:
a substrate;
an etch stop layer on the substrate;
a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, the through-hole electrode including:
an upper electrode surface having a slope with respect to the upper surface of the substrate that varies in a horizontal direction substantially parallel to the upper surface of the substrate, the etch stop layer being between the substrate and the upper electrode surface; and
a conductive pad covering the upper electrode surface of the through-hole electrode,
wherein:
the through-hole electrode is a first through-hole electrode, and
the semiconductor device further includes a second through-hole electrode extending through the substrate and the etch stop layer in the vertical direction, the second through-hole electrode having a width different from a width of the first through-hole electrode and including an electrode top surface having a slope with respect to the upper surface of the substrate that varies in the horizontal direction.
11. The semiconductor device as claimed in claim 10 , wherein the etch stop layer includes a first surface adjacent to the substrate and a second surface opposite the first surface, the upper electrode surface of the through-hole electrode being higher than the second surface of the etch stop layer.
12. The semiconductor device as claimed in claim 10 , wherein the upper electrode surface defines a protrusion portion above the etch stop layer, the protrusion portion being convex.
13. The semiconductor device as claimed in claim 10 , wherein the upper electrode surface defines a protrusion portion above the etch stop layer, the protrusion portion being concave.
14. The semiconductor device as claimed in claim 10 , further comprising an insulation pattern covering the sidewall of the through-hole electrode, the through-hole electrode and the insulation pattern constituting a through-hole electrode structure.
15. The semiconductor device as claimed in claim 14 , wherein:
the upper electrode surface defines a protrusion portion above the etch stop layer, and
the insulation pattern covers a sidewall of the protrusion portion of the through-hole electrode.
16. The semiconductor device as claimed in claim 14 , wherein:
the upper electrode surface defines a protrusion portion above the etch stop layer, and
a portion of the insulation pattern covering a sidewall of the protrusion portion has a slope with respect to the upper surface of the substrate that varies in the horizontal direction.
17. The semiconductor device as claimed in claim 10 , wherein the conductive pad contacts the upper electrode surface of the through-hole electrode, a portion of the conductive pad contacting the upper electrode surface of the through-hole electrode being not flat.
18. The semiconductor device as claimed in claim 10 , wherein:
the first through-hole electrode further includes a sidewall having a slope with respect to the upper surface of the substrate that is constant in the horizontal direction, and
the second through-hole electrode further includes
an electrode sidewall having a slope with respect to the upper surface of the substrate that is constant in the horizontal direction.
19. A semiconductor device comprising:
a substrate;
an etch stop layer on the substrate, the etch stop layer including a first surface adjacent to the substrate and a second surface opposite the first surface;
a first through-hole electrode structure extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, the first through-hole electrode structure including:
a first through-hole electrode including a first protrusion portion that protrudes beyond the second surface of the etch stop layer, and
a first insulation pattern covering a sidewall of the first through-hole electrode;
a second through-hole electrode structure extending through the substrate and the etch stop layer in the vertical direction and having a width different from that of the first through-hole electrode structure, the second through-hole electrode structure including:
a second through-hole electrode including a second protrusion portion that protrudes beyond the second surface of the etch stop layer, and
a second insulation pattern covering a sidewall of the second through-hole electrode; and
first and second conductive pads covering the first protrusion portion and the second protrusion portion, respectively, each of the first protrusion portion and the second protrusion portion being not flat.
20. The semiconductor device as claimed in claim 19 , wherein the first protrusion portion and the second protrusion portion have a substantially same height.