Granted Patent B2

US 12,347,781 · App. 18/137,506 · Granted Jul 1, 2025

Inventors: Hakseung Lee (Seoul, KR); Jinnam Kim (Anyang-si, KR); Hyoukyung Cho (Seoul, KR); Taeseong Kim (Suwon-si, KR); Kwangjin Moon (Hwaseong-si, KR)

Assignee: Samsung Electronics Co., Ltd.

H01L23/5384H01L23/5385H01L2224/08146

Abstract

Claims (89)

1. A semiconductor device, comprising:

a first semiconductor substrate having a first surface and a second surface opposite from each other;

a second semiconductor substrate having a first surface and a second surface opposite from each other;

a first circuit layer provided on the first surface of the first semiconductor substrate;

a second circuit layer provided on the first surface of the second semiconductor substrate;

a connection pad interposed between the second circuit layer and the first semiconductor substrate;

a first penetration via and a second penetration via that extend from the second surface of the first semiconductor substrate into at least a portion of the first circuit layer, the first penetration via in a first penetration hole and the second penetration via in a second penetration hole; and

a third penetration via that extends from the second surface of the second semiconductor substrate into at least a portion of the second circuit layer,

wherein a maximum width of the first penetration via is greater than a maximum width of the second penetration via,

wherein each of the first and second penetration holes comprises a first portion, a second portion, and a third portion,

wherein the first portions of the first and second penetration holes are adjacent to the second surface of the first semiconductor substrate and the second portions of the first and second penetration holes are between the first portions and the third portions of the respective first and second penetration holes, wherein a height of the first portion of the first penetration hole is greater than a height of the second portion of the first penetration hole,

wherein the first penetration hole has therein a first intermediate layer that surrounds the first penetration via, wherein a thickness of the first intermediate layer is a first thickness between a top of the first portion of the first penetration hole and a bottom of the first portion of the first penetration hole, wherein the thickness of the first intermediate layer decreases from the first thickness to a second thickness that is less than the first thickness between a top of the second portion of the first penetration hole and a bottom of the second portion of the first penetration hole, and

wherein a height of the first portion of the first penetration hole is greater than a height of the first portion of the second penetration hole.

2. The device of claim 1 , wherein the connection pad comprises a first connection pad and a second connection pad, and

wherein the first connection pad is provided on top surfaces of the first penetration via and the second penetration via.

3. The device of claim 2 , further comprising a first intermediate insulating layer on the second surface of the first semiconductor substrate, and

wherein a top surface of the first connection pad is coplanar with a top surface of the first intermediate insulating layer.

4. The device of claim 2 , wherein the second circuit layer comprises a second interconnection structure therein,

wherein the second interconnection structure is connected to the second connection pad, and

wherein the first connection pad and the second connection pad are directly coupled to each other to electrically connect the first penetration via to the third penetration via.

5. The device of claim 1 , wherein a maximum width of the third penetration via is greater than the maximum width of the second penetration via.

6. The device of claim 5 , further comprising:

a third connection pad provided on a top surface of the third penetration via; and

a protection layer provided on a top surface of the second semiconductor substrate,

wherein the protection layer comprises an insulating material.

7. The device of claim 5 , further comprising:

a third semiconductor substrate provided on a top surface of the second semiconductor substrate;

a third circuit layer provided on a bottom surface of the third semiconductor substrate; and

a fourth penetration via penetrating the third semiconductor substrate and at least a portion of the third circuit layer.

8. The device of claim 1 , wherein the third penetration via is provided in a third penetration hole,

wherein the third penetration hole comprises a first portion, a second portion, and a third portion,

wherein a sidewall of the first portion of the third penetration hole is substantially perpendicular to the second surface of the second semiconductor substrate, and

wherein a sidewall of the second portion of the third penetration hole has a different inclination angle from the sidewall of the first portion of the third penetration hole.

9. A semiconductor device, comprising:

a first semiconductor substrate;

a first circuit layer provided on a bottom surface of the first semiconductor substrate;

a second semiconductor substrate provided on a top surface of the first semiconductor substrate;

a second circuit layer interposed between the second semiconductor substrate and the first semiconductor substrate;

first and second lower penetration vias that penetrate the first semiconductor substrate and at least a portion of the first circuit layer;

first and second upper penetration vias that penetrate the second semiconductor substrate and at least a portion of the second circuit layer; and

first connection pads provided on top surfaces of the first and second lower penetration vias,

wherein the first and second lower penetration vias are electrically connected to the first connection pads, respectively,

wherein the second circuit layer comprises second connection pads therein,

wherein the first and second upper penetration vias are electrically connected to the second connection pads, respectively,

wherein the first connection pads are directly coupled to the second connection pads, respectively,

wherein the first and second lower penetration vias have different widths and are provided respectively in a first penetration hole and a second penetration hole,

wherein the first and second upper penetration vias have different widths and are provided respectively in a third penetration hole and a fourth penetration hole,

wherein each of the first and second penetration holes has a first portion, a second portion, and a third portion,

wherein the first portions of the first and second penetration holes are adjacent to the bottom surface of the first semiconductor substrate,

wherein a width of the first portion of the first penetration hole is greater than a width of the first portion of the second penetration hole,

wherein a height of the first portion of the first penetration hole is smaller than a height of the first portion of the second penetration hole,

wherein the first penetration hole has a first intermediate layer therein that surrounds the first lower penetration via,

wherein the second portion of the first penetration hole comprises a bottom surface between a sidewall of the second portion of the first penetration hole and a sidewall of the third portion of the first penetration hole, and

wherein a thickness of the first intermediate layer decreases toward the bottom surface of the second portion of the first penetration hole.

10. The device of claim 9 ,

wherein sidewalls of the first portions of the first and second penetration holes are substantially perpendicular to the bottom surface of the first semiconductor substrate, and

wherein sidewalls of the second portions of the first and second penetration holes differ from the sidewalls of the first portions of the first and second penetration holes in terms of an inclination angle relative to the bottom surface of the first semiconductor substrate.

11. The device of claim 10 , wherein an angle between the sidewall of the second portion of the first penetration hole and the bottom surface of the first semiconductor substrate is greater than 0° and smaller than 90°.

12. The device of claim 10 , wherein a width of the second portion of the first penetration hole decreases with decreasing distance from a bottom surface of the first penetration hole.

13. The device of claim 10 , wherein a width of the second portion of the first penetration hole is less than or equal to a width of the first portion of the first penetration hole.

14. The device of claim 9 , wherein the first circuit layer comprises a first via pad therein and the second circuit layer comprises a second via pad therein,

wherein the first lower penetration via is coupled to the first via pad, and

wherein the first upper penetration via is coupled to the second via pad.

15. The device of claim 14 , wherein each of the first and third penetration holes has a third portion,

wherein a width of the first via pad is larger than a width of the third portion of the first penetration hole, and

wherein a width of the second via pad is larger than a width of the third portion of the third penetration hole.

16. The device of claim 9 , wherein the first lower penetration via comprises a barrier layer on the bottom surface of the first penetration hole.

17. A semiconductor device, comprising:

a first semiconductor substrate having a first surface and a second surface opposite from each other;

a second semiconductor substrate having a first surface and a second surface opposite from each other;

a first circuit layer provided on the first surface of the first semiconductor substrate;

a second circuit layer provided on the first surface of the second semiconductor substrate;

a connection pad interposed between the second circuit layer and the first semiconductor substrate;

a first intermediate insulating layer on the second surface of the first semiconductor substrate;

a first penetration via and a second penetration via extending from the second surface of the first semiconductor substrate into at least a portion of the first circuit layer; and

a third penetration via extending from the second surface of the second semiconductor substrate into at least a portion of the second circuit layer,

wherein a maximum width of the first penetration via is greater than a maximum width of the second penetration via,

wherein the connection pad comprises a first connection pad and a second connection pad,

wherein a top surface of the first connection pad is coplanar with a top surface of the first intermediate insulating layer,

wherein the first penetration via is in a first penetration hole and surrounded in the first penetration hole by a first intermediate layer that has a thickness that is constant along a first portion of the first penetration hole and decreases along a second portion of the first penetration hole as a distance from the second surface of the first semiconductor substrate increases,

wherein the first portion of the first penetration hole is between the second surface of the first semiconductor substrate and the second portion of the first penetration hole, and

wherein a height of the first portion of the first penetration hole is greater than a height of the second portion of the first penetration hole.

18. The semiconductor device of claim 17 , wherein the first circuit layer comprises a first via pad and a second via pad therein,

wherein the first penetration via is coupled to the first via pad, and

wherein the second penetration via is coupled to the second via pad.

19. The semiconductor device of claim 18 ,

wherein the second penetration via has a first portion, a second portion, and a third portion, wherein the first penetration via has a third portion, the first portion of each of the first and second penetration vias adjacent to the second surface of the first semiconductor substrate, the third portion of each of the first and second penetration vias within the first circuit layer, and the second portion of each of the first and second penetration vias between the first and third portions of the respective penetration via,

wherein a width of the first via pad is larger than a width of the third portion of the first penetration via, and

wherein a width of the second via pad is larger than a width of the third portion of the second penetration via.

Priority Claims (1)

Continuity (2)

References Cited (14)