Hydrophobic low-dielectric-constant film and preparation method therefor
The present disclosure provides a hydrophobic low-dielectric-constant film and a preparation method therefor. The low-dielectric-constant film is formed from one or more fluorine-containing compounds A by means of a plasma enhanced chemical vapor deposition method, and the one or more fluorine-containing compounds comprise a compound having the general formula C x Si y O m H n F 2x+2y−n+2 or C x Si y O m H n F 2x+2y−n , x being an integer from 1 to 20, y being an integer from 0 to 8, m being an integer from 0 to 6, and n being 0, 3, 6, 7, 9, 10, 12, 13, 15, 16, 17 and 19. Thus, a nano-film having a low dielectric constant and good hydrophobicity is formed on the surface of a substrate.
1. A hydrophobic low-dielectric-constant film, formed of a fluorine-containing compound A and a compound B by plasma enhanced chemical vapor deposition, wherein the fluorine-containing compound A comprises one or more compounds having a general formula C x Si y O m H n F 2x+2y−n+2 or C x Si y O m H n F 2x+2y−n , wherein x is an integer from 1 to 20, y is an integer from 0 to 8, m is an integer from 0 to 6, and n is 0, 3, 6, 7, 9, 10, 12, 13, 15, 16, 17, 19, wherein the compound B comprises one or more selected from a group consisting of: butadiene, pentadiene, 1,2-epoxy-5-hexene, and heptadiene.
2. The hydrophobic low-dielectric-constant film according to claim 1 , wherein the hydrophobic low-dielectric-constant film is formed of the compound A, the compound B and a compound C by plasma enhanced chemical vapor deposition.
3. The hydrophobic low-dielectric-constant film according to claim 2 , wherein a molar ratio of the compound A is greater than 35%.
4. The hydrophobic low-dielectric-constant film according to claim 2 , wherein the compound C comprises one or more selected from a group consisting of: cyclohexane, toluene, xylene, vinylbenzene, divinylbenzene, dicyclopentadiene, naphthalene, and pyridine.
5. The hydrophobic low-dielectric-constant film according to claim 2 , wherein the compound C is selected from: cycloalkanes, aromatics, fused ring aromatics, and aromatic heterocycles.
6. The hydrophobic low-dielectric-constant film according to claim 1 , wherein x is an integer from 1 to 10, y is an integer from 0 to 6, and m is an integer from 0 to 3.
7. The hydrophobic low-dielectric-constant film according to claim 1 , wherein the compound A comprises one or more selected from a group consisting of: tetrafluoroethylene, hexafluoropropylene, hexafluoroethane, hexafluoropropylene oxide, 1H, 1H,2H,2H-perfluorooctyltriethoxysilane, trimethylfluorosilane, and octafluorobutene.
8. The hydrophobic low-dielectric-constant film according to claim 1 , wherein a k value range of the hydrophobic low-dielectric-constant film is selected from: 1.8 to 1.9, 1.9 to 2.0, 2.0 to 2.1, 2.1 to 2.2, 2.2 to 2.3, 2.3 to 2.4, 2.4 to 2.5, 2.5 to 2.6, 2.6 to 2.7, or 2.7 to 2.8.
9. The hydrophobic low-dielectric-constant film according to claim 1 , wherein the hydrophobic low-dielectric-constant film has a static contact angle selected from: 110° to 115°, 115° to 120°, 120° to 125°, 125° to 130°, 130° to 135°, or 135° to 140°.
10. The hydrophobic low-dielectric-constant film according to claim 1 , wherein a Young's modulus range of the hydrophobic low-dielectric-constant film is selected from: 6 GPa to 7 GPa, 7 GPa to 8 GPa, 8 GPa to 9 GPa, 9 GPa to 10 GPa, 10 GPa to 11 GPa, 11 GPa to 12 GPa, 12 GPa to 13 GPa, 13 GPa to 14 GPa, or 14 GPa to 15 GPa.
11. A preparation method for the hydrophobic low-dielectric-constant film according to claim 1 , comprising steps of:
(A) introducing the fluorine-containing compound A and the compound B into a reaction chamber of a reaction apparatus;
(B) introducing a plasma source gas into the reaction chamber; and
(C) depositing the hydrophobic low-dielectric-constant film on a substrate by plasma enhanced chemical vapor deposition within the reaction chamber.
12. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , further comprising: introducing a compound C into the reaction chamber of the reaction apparatus.
13. The preparation method for the hydrophobic low-dielectric-constant film according to claim 12 , wherein a molar ratio of the compound A is greater than 35%.
14. The preparation method for the hydrophobic low-dielectric-constant film according to claim 12 , wherein the compound C comprises one or more selected from a group consisting of cyclohexane, toluene, xylene, vinylbenzene, divinylbenzene, dicyclopentadiene, naphthalene, and pyridine.
15. The preparation method for the hydrophobic low-dielectric-constant film according to claim 12 , wherein the compound C is selected from: cycloalkanes, aromatics, fused ring aromatics, and aromatic heterocycles.
16. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , comprising: operating the substrate, such that the substrate is in a moving state within the reaction chamber.
17. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , further comprising: cleaning the substrate.
18. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , prior to step (A) further comprising: vacuumizing the reaction chamber.
19. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein x is an integer from 1 to 10, y is an integer from 0 to 6, and m is an integer from 0 to 3.
20. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein the compound A comprises one or more selected from a group consisting of: tetrafluoroethylene, hexafluoropropylene, hexafluoroethane, hexafluoropropylene oxide, 1H,1H,2H,2H-perfluorooctyltriethoxysilane, trimethylfluorosilane, and octafluorobutene.
21. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein a k value range of the hydrophobic low-dielectric-constant film is selected from: 1.8-1.9, 1.9-2.0, 2.0-2.1, 2.1-2.2, 2.2-2.3, 2.3-2.4, 2.4-2.5, 2.5-2.6, 2.6-2.7, or 2.7-2.8.
22. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein the hydrophobic low-dielectric-constant film has a static contact angle selected from: 110° to 115°, 115° to 120°, 120° to 125°, 125° to 130°, 130° to 135°, or 135° to 140°.
23. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein a Young's modulus range of the hydrophobic low-dielectric-constant film is selected from: 6 GPa to 7 GPa, 7 GPa to 8 GPa, 8 GPa to 9 GPa, 9 GPa to 10 GPa, 10 GPa to 11 GPa, 11 GPa to 12 GPa, 12 GPa to 13 GPa, 13 GPa to 14 GPa, or 14 GPa to 15 GPa.
24. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein the plasma source gas is selected from: inert gases or fluorocarbons.
25. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein the plasma source gas is selected from: helium or carbon tetrafluoride.
26. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein an input power density of the reaction apparatus is in a range of 0.0001 W/L to 10 W/L.
27. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein a chamber temperature of the reaction apparatus is in a range of 10-100° C.
28. The preparation method for the hydrophobic low-dielectric-constant film according to claim 11 , wherein the substrate comprises one selected from: a printed circuit board (PCB), a circuit board of a mobile phone antenna, and a mobile phone flexible printed circuit (FPC).