Quantum dot lasers and methods for making the same
A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.
1. A quantum dot (QD) laser comprising:
a silicon substrate; and
an active region epitaxially deposited on the silicon substrate, wherein the active region is comprised of III-V type semiconductor material that results in one or more misfit dislocations located at a boundary between the silicon substrate and the III-V type semiconductor material, wherein the active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers, wherein a net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser, wherein each barrier layer provides a net tensile strain that offsets the net compressive strain associated with the plurality of QD layers to maintain the net strain below the maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.
2. The QD laser of claim 1 , wherein the active region contains a plurality of threading dislocations originating from the misfit dislocation located at the boundary between the silicon substrate and the III-V type semiconductor material, and wherein the threading dislocations do not terminate at misfit locations within the active layer.
3. The QD laser of claim 1 , wherein the barrier layer comprises Indium-Gallium-Phosphide (InGaP).
4. The QD laser of claim 3 , wherein the InGaP barrier layer is comprised of approximately 90% Gallium.
5. The QD laser of claim 1 , wherein the barrier layer is comprised of Indium-Arsenide-Phosphide (InAsP).
6. The QD laser of claim 1 , wherein the plurality of barrier layers and the plurality of QD layers do not include nitrogen.
7. A quantum dot (QD) laser comprising:
a semiconductor substrate; and
an active region epitaxially deposited on the semiconductor substrate, wherein the active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers, wherein each barrier layer provides a strain that at least partially offsets a strain introduced by each QD layer, wherein the active region includes a plurality of threading dislocations extending from one or more misfit dislocations formed between the semiconductor substrate and the active region, wherein the strain provided by the barrier layer that at least partially offsets the strain introduced by each QD layer prevents formation of misfit locations within the active region.
8. The QD laser of claim 7 , wherein the semiconductor substrate is comprised of silicon and the active region is comprised of one or more III-V semiconductors.
9. The QD laser of claim 7 , wherein a net strain within the active region is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region.
10. The QD laser of claim 7 , further including:
a buffer layer comprised of III-V type semiconductor material epitaxially deposited on the semiconductor substrate, wherein a misfit dislocation is formed between the buffer layer and the semiconductor substrate; and
a cladding layer comprised of III-V type semiconductor material epitaxially deposited on the buffer layer.
11. The QD laser of claim 7 , wherein the plurality of barrier layers and the plurality of QD layers do not include nitrogen.