IP Library Granted Patent US 12,356,766
Granted Patent B2
US 12,356,766 · App. 17/780,880 · Granted Jul 8, 2025

Display device using semiconductor light-emitting element seated in plurality of cells of barrier rib portion

Inventors: Jinhyung Lee (Seoul, KR); Changseo Park (Seoul, KR); Younho Heo (Seoul, KR); Kisu Kim (Seoul, KR); Seongmin Moon (Seoul, KR)
Assignee: LG ELECTRONICS INC.
H10H20/8312H01L25/0753H10H20/01H10H20/857H10H20/032H10H20/0364
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,356,766
App. No.
17/780,880
Granted
Jul 8, 2025
Kind
B2
Abstract

Discussed is a display device including a base portion; a first electrode formed on the base portion; a barrier rib portion stacked on the first electrode while forming a plurality of cells; a second electrode formed on the barrier rib portion; and semiconductor light emitting diodes seated in the plurality of cells, wherein the first electrode and the second electrode are spaced apart from each other with the barrier rib portion disposed therebetween.

Claims (34)

1. A display device comprising:

a base portion;

a first electrode formed on the base portion;

a barrier rib portion stacked on the first electrode while forming a plurality of cells;

a second electrode formed on the barrier rib portion; and

semiconductor light emitting diodes seated in the plurality of cells,

wherein the first electrode and the second electrode are spaced apart from each other with the barrier rib portion disposed therebetween,

wherein each semiconductor light emitting diode includes:

a first conductivity type electrode;

a first conductivity type semiconductor layer formed on the first conductivity type electrode;

an active layer formed on the first conductivity type semiconductor layer;

a second conductivity type semiconductor layer formed on the active layer; and

a second conductivity type electrode formed on the second conductivity type semiconductor layer, and

wherein at least the first electrode is electrically connected to one of the first conductivity type electrode and the second conductivity type electrode.

2. The display device of claim 1 , wherein the second electrode is formed on a region of the barrier rib portion overlapping at least the first electrode among entire regions of the barrier rib portion.

3. The display device of claim 1 , wherein the first electrode extends in a first direction and a second direction crossing the first direction to cover the base portion.

4. The display device of claim 1 , wherein the first electrode is a light-transmitting electrode.

5. The display device of claim 1 , wherein the second electrode extends in a first direction and a second direction crossing the first direction to cover one surface of the barrier rib portion.

6. The display device of claim 1 , further comprising a dielectric layer covering the second electrode and extending to an inner surface of a cell among the plurality of cells to cover the first electrode overlapping the cell.

7. The display device of claim 6 , wherein the second electrode shields an electric field from charging a surface of the dielectric layer.

8. The display device of claim 1 , wherein a thickness of the barrier rib portion is 15 μm or less.

9. The display device of claim 1 , wherein the first electrode and the second electrode are separated in a thickness direction of the base portion.

10. The display device of claim 1 , wherein the first electrode and the second electrode are separated by at least a thickness of the barrier rib portion.

11. The display device of claim 6 , wherein the dielectric layer includes at least one of SiO 2 , SiN x , Al 2 O 3 , TiO 2 , or HfO 2 .

12. A display device comprising:

a base portion;

a first electrode disposed on the base portion;

a barrier rib portion stacked on the first electrode;

a second electrode disposed on the barrier rib portion;

a dielectric layer covering the second electrode and extending through the barrier rib portion to contact the first electrode;

a plurality of cells disposed at locations where the dielectric layer contacts the first electrode; and

semiconductor light emitting diodes seated in the plurality of cells.

13. The display device of claim 12 , wherein the first electrode and the second electrode are spaced apart from each other in a thickness direction of the barrier rib portion.

14. The display device of claim 12 , wherein a thickness of the barrier rib portion is 15 μm or less.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 31, 2022
From: LEE, JINHYUNG; PARK, CHANGSEO; HEO, YOUNHO; KIM, KISU; MOON, SEONGMIN
To: LG ELECTRONICS INC.
Reel/Frame 060060/0257 →
Priority Claims (1)
KR 10-2019-0164885 · Dec 11, 2019 · national
Continuity (1)
Related Publication 20230015395A1 · Jan 19, 2023
References Cited (12)
US 20050009303A1 · Schatz · 2005 [cited by applicant]
US 20140261613A1 · Nielson et al. · 2014 [cited by applicant]
US 20170133564A1 · Ulmer et al. · 2017 [cited by applicant]
US 20180033843A1 · Liu · 2018 [cited by examiner]
US 20180240937A1 · Park · 2018 [cited by examiner]
US 20190252576A1 · Lee · 2019 [cited by examiner]
US 20220013511A1 · Kishimoto · 2022 [cited by examiner]
KR 1020130033450A · 2013 [cited by applicant]
KR 1020190098291A · 2019 [cited by applicant]
KR 1020190122113A · 2019 [cited by applicant]
KR 1020190122117A · 2019 [cited by applicant]
WO WO2019203404A1 · 2019 [cited by applicant]