Semiconductor device and manufacturing method thereof
A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.
1. A semiconductor device comprising a first region and a second region in a top view,
wherein the semiconductor device comprises:
a first insulator;
a first transistor in the first region over the first insulator;
a second insulator over the first transistor;
a third insulator over the second insulator;
a second transistor in the second region over the first insulator;
a fourth insulator over the second transistor;
a fifth insulator over the fourth insulator; and
a sixth insulator over the third insulator and the fifth insulator,
wherein the third insulator comprises an opening reaching the second insulator,
wherein the sixth insulator is in contact with a top surface of the second insulator inside the opening,
wherein an entire top surface of the fourth insulator is in contact with the fifth insulator,
wherein the sixth insulator is in contact with the first insulator between the first region and the second region, and
wherein an arrangement density of the second transistor in the second region is higher than an arrangement density of the first transistor in the first region.
2. The semiconductor device according to claim 1 ,
wherein an amount of oxygen contained in a layer below the third insulator in the first region is smaller than an amount of oxygen contained in a layer below the fifth insulator in the second region.
3. The semiconductor device according to claim 1 ,
wherein the first insulator and the sixth insulator comprise silicon and nitrogen.
4. The semiconductor device according to claim 1 ,
wherein the third insulator and the fifth insulator are aluminum oxide.
5. The semiconductor device according to claim 1 ,
wherein the first transistor and the second transistor each comprise an oxide, and
wherein the oxide is an oxide semiconductor comprising one or more selected from In, Ga, and Zn.
6. A method for manufacturing a semiconductor device, comprising:
forming a first insulator;
depositing a first insulating film over the first insulator;
depositing an oxide film over the first insulating film;
performing a first heat treatment;
depositing a first conductive film and a second insulating film in this order over the oxide film;
processing the first insulating film, the oxide film, the first conductive film, and the second insulating film into an island shape to form a second insulator, an oxide, a conductive layer, and an insulating layer over the first insulator;
forming a third insulator in contact with the first insulator, over the first insulator, the second insulator, the oxide, the conductive layer, and the insulating layer;
forming a fourth insulator over the third insulator;
forming a first opening reaching the oxide in the conductive layer, the insulating layer, the third insulator, and the fourth insulator;
forming a first conductor and a second conductor from the conductive layer and forming a fifth insulator and a sixth insulator from the insulating layer by the formation of the first opening;
performing second heat treatment;
depositing a third insulating film over the fourth insulator and the first opening;
depositing a fourth insulating film over the third insulating film;
depositing a second conductive film over the fourth insulating film;
performing CMP treatment on the third insulating film, the fourth insulating film, and the second conductive film until a top surface of the fourth insulator is exposed to form a seventh insulator, an eighth insulator, and a third conductor;
forming a ninth insulator over the fourth insulator, the seventh insulator, the eighth insulator, and the fourth conductor;
forming a mask in a first region over the ninth insulator in a top view;
implanting oxygen into a second region not overlapping the first region, in the top view;
performing third heat treatment;
forming a second opening reaching the fourth insulator over the ninth insulator; and
performing fourth heat treatment,
wherein a temperature of the first heat treatment is higher than a temperature of the fourth heat treatment.
7. The method for manufacturing a semiconductor device, according to claim 6 ,
wherein the third insulator and the ninth insulator are aluminum oxide.
8. The method for manufacturing a semiconductor device, according to claim 6 ,
wherein the oxygen is implanted into the fourth insulator by the implantation of the oxygen.
9. The method for manufacturing a semiconductor device, according to claim 6 ,
wherein the implantation of the oxygen is performed by an ion implantation method.