Bipolar transistor having collector with doping concentration grading
This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×10 16 cm −3 . The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.
1. A bipolar transistor comprising:
an emitter;
a base; and
a collector having a first collector region and a second collector region, the first collector region between the base and the second collector region, the first collector region having a substantially flat doping concentration, the second collector region having a doping concentration with a grading that increases from a first end of the second collector region that is closest to the first collector region to a second end of the second collector region that is furthest from the first collector region, the graded doping concentration at the first end of the second collector region being substantially the same as the substantially flat doping concentration of the first collector region, the second end of the second collector region having the highest doping concentration in the collector, the second collector region having a thickness of at least about 0.7 microns, the first collector region abutting the base so that the substantially flat doping concentration that is substantially the same as the doping concentration as the first end of the second collector region extends to the base.
2. The bipolar transistor of claim 1 , wherein the collector has a thickness of more than 1.1 microns.
3. The bipolar transistor of claim 1 , wherein the collector has a thickness in a range from about 1.2 microns to about 1.5 microns.
4. The bipolar transistor of claim 1 , wherein the second end of the second collector region has a doping concentration that is larger than 9×10 16 cm −3 .
5. The bipolar transistor of claim 1 , wherein the second end of the second collector region has a doping concentration that is in a range of about 1×10 17 cm −3 to about 5×10 17 cm −3 .
6. The bipolar transistor of claim 1 , wherein the collector has a thickness in a range from about 1.2 microns to about 1.5 microns, and the second end of the second collector region has a doping concentration that is in a range of about 1×10 17 cm −3 to about 5×10 17 cm −3 .
7. The bipolar transistor of claim 1 , wherein a doping concentration at the second end of the second collector region is at least 13 times greater than a doping concentration at the first end of the second collector region.
8. The bipolar transistor of claim 1 , further comprising a sub-collector, the collector between the base and the sub-collector, and the second end of the second collector region closest to the sub-collector.
9. The bipolar transistor of claim 1 , wherein the second end of the second collector region has a doping concentration that is in a range of about 1.5×10 17 cm −3 to about 5×10 17 cm −3 .
10. The bipolar transistor of claim 1 , wherein the first collector region and the second collector region have a combined thickness in a range from about 1.2 microns to about 1.5 microns, and the second end of the second collector region has a doping concentration that is in a range of about 1.5×10 17 cm −3 to about 5×10 17 cm −3 .
11. A bipolar transistor comprising:
an emitter;
a base; and
a collector, the base between the emitter and the collector, the collector having a first end closest to the base and a second end furthest from the base, the collector having a doping concentration larger than about 1.5×10 17 cm −3 at the second end of the collector, the collector having a first collector region and a second collector region, the first collector region between the base and the second collector region, the first collector region having a substantially flat doping concentration, the second collector region having a doping concentration with a grading that increases along a direction from a first end of the second collector region that is closest to the first collector region to a second end of the second collector region that is furthest from the first collector region, the graded doping concentration at the first end of the second collector region being substantially the same as the substantially flat doping concentration of the first collector region, and the first collector region abutting the base.
12. The bipolar transistor of claim 11 , wherein the doping concentration at the second end of the collector is less than or equal to about 5×10 17 cm −3 .
13. The bipolar transistor of claim 11 , wherein the doping concentration at the second end of the collector is in a range of about 2×10 17 cm −3 to about 5×10 17 cm −3 .
14. The bipolar transistor of claim 11 , wherein the collector has a thickness of more than 1.1 microns.
15. The bipolar transistor of claim 11 , wherein the collector has a thickness in a range from about 1.2 microns to about 1.5 microns.
16. The bipolar transistor of claim 11 , further comprising a sub-collector, the collector between the base and the sub-collector, and the second end of the collector abutting the sub-collector.
17. The bipolar transistor of claim 11 , wherein the bipolar transistor is a heterojunction bipolar transistor (HBT).
18. The bipolar transistor of claim 11 , wherein the bipolar transistor is a GaAs-based transistor.
19. A power amplifier comprising a bipolar transistor of claim 11 .
20. A mobile or fixed wireless device comprising an antenna, a battery, and the power amplifier of claim 19 .
21. A bipolar transistor comprising:
an emitter;
a base; and
a collector having a first collector region and a second collector region, the first collector region between the base and the second collector region, the first collector region having a substantially flat doping concentration, the second collector region having a doping concentration with a grading that increases from a first end of the second collector region that is closest to the first collector region to a second end of the second collector region that is furthest from the first collector region, the graded doping concentration at the first end of the second collector region being substantially the same as the substantially flat doping concentration of the first collector region, the second end of the second collector region having the highest doping concentration in the collector, the first collector region and the second collector region having a combined thickness of at least about 1.2 microns, the first collector region with the substantially flat doping concentration that is substantially the same as the doping concentration as the first end of the second collector region abutting the base.
22. The bipolar transistor of claim 21 , wherein the first collector region and the second collector region have a combined thickness in a range from about 1.2 microns to about 1.5 microns.
23. The bipolar transistor of claim 21 , wherein the second end of the second collector region has a doping concentration that is larger than about 1.5×10 17 cm −3 .
24. The bipolar transistor of claim 21 , wherein the first collector region and the second collector region have a combined thickness in a range from about 1.2 microns to about 1.5 microns, and the second end of the second collector region has a doping concentration that is in a range of about 1.5×10 17 cm −3 to about 5×10 17 cm −3 .