Method for forming an image sensor
Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.
1. An image sensor, comprising:
a semiconductor substrate;
a semiconductor device layer overlying the semiconductor substrate and inset into the semiconductor substrate;
a photodetector in the semiconductor device layer; and
an undoped semiconductor layer having a different bandgap than the semiconductor device layer and extending along a sidewall of the semiconductor device layer and a bottom surface of the semiconductor device layer.
2. The image sensor according to claim 1 , wherein the undoped semiconductor layer has a U-shaped profile.
3. The image sensor according to claim 1 , wherein the undoped semiconductor layer has a ring-shaped top geometry that surrounds the semiconductor device layer.
4. The image sensor according to claim 1 , wherein the undoped semiconductor layer has a bandgap that is more than a bandgap of the semiconductor device layer.
5. The image sensor according to claim 1 , further comprising:
a semiconductor cap layer covering the semiconductor device layer and having a different bandgap than the semiconductor device layer.
6. The image sensor according to claim 1 , wherein the undoped semiconductor layer directly contacts the semiconductor substrate and shares a semiconductor material with the semiconductor substrate.
7. An image sensor, comprising:
a semiconductor substrate;
a semiconductor device layer recessed into a top of the semiconductor substrate; and
a photodetector in the semiconductor device layer;
wherein the semiconductor substrate comprises a doped region, wherein the doped region extends along a sidewall of the semiconductor device layer and a bottom surface of the semiconductor device layer, and wherein the doped region is spaced from the semiconductor device layer and has a bottommost boundary that is closer to the bottom surface of the semiconductor device layer than to a bottom surface of the semiconductor substrate.
8. The image sensor according to claim 7 , further comprising:
a semiconductor interlayer separating the doped region from the semiconductor device layer.
9. The image sensor according to claim 7 , wherein the semiconductor substrate is silicon, and wherein the semiconductor device layer comprises germanium.
10. The image sensor according to claim 7 , wherein the semiconductor device layer and the semiconductor substrate have different coefficients of thermal expansion.
11. The image sensor according to claim 7 , wherein the doped region extends along the sidewall of the semiconductor device layer and the bottom surface of the semiconductor device layer as a layer having a substantially uniform thickness.
12. The image sensor according to claim 7 , wherein the semiconductor substrate further comprises an implant isolation region extending in a closed path around the semiconductor device layer, wherein the doped region has a sidewall boundary facing the implant isolation region in a direction away from the semiconductor device layer, and wherein the sidewall boundary is spaced from the implant isolation region.
13. The image sensor according to claim 7 , wherein the semiconductor substrate further comprises an implant isolation region extending in a closed path around the semiconductor device layer, and wherein the doped region further extends along a top surface of the semiconductor substrate, away from the semiconductor device layer, to cross the closed path of the implant isolation region.
14. An image sensor, comprising:
a semiconductor substrate;
a semiconductor device layer recessed into a top of the semiconductor substrate;
a semiconductor cap layer overlying the semiconductor device layer; and
a photodetector in the semiconductor device layer;
wherein the semiconductor substrate has a pair of semiconductor sidewalls facing the semiconductor device layer and respectively on opposite sides of the semiconductor device layer, and wherein a separation between the pair of semiconductor sidewalls is greater than a width of the semiconductor device layer.
15. The image sensor according to claim 14 , further comprising:
a semiconductor layer separating the semiconductor device layer from the pair of semiconductor sidewalls.
16. The image sensor according to claim 14 , wherein the semiconductor device layer has a higher absorption coefficient for infrared radiation than the semiconductor substrate.
17. The image sensor according to claim 14 , wherein the separation between the pair of semiconductor sidewalls is greater than a width of the semiconductor cap layer.
18. The image sensor according to claim 17 , wherein the semiconductor cap layer has a cap sidewall, which is laterally offset from and laterally between the pair of semiconductor sidewalls.
19. The image sensor according to claim 15 , wherein the semiconductor substrate is doped at the pair of semiconductor sidewalls, and wherein the semiconductor layer is undoped.
20. The image sensor according to claim 15 , wherein a top surface of the semiconductor layer is elevated relative to a top surface of the semiconductor substrate and is recessed relative to a top surface of the semiconductor cap layer.