Granted Patent B2

US 12,369,462 · App. 17/868,885 · Granted Jul 22, 2025

Inventors: Hyunmin Cho (Yongin-si, KR); Taesung Kim (Yongin-si, KR); Sungwon Cho (Yongin-si, KR); Yunjong Yeo (Yongin-si, KR)

Assignee: SAMSUNG DISPLAY CO., LTD.

H10K59/124H10K59/126H10K71/00H10K59/1201H10K59/123

Abstract

Claims (47)

1. A display apparatus comprising:

a substrate;

a first semiconductor layer disposed over the substrate;

a first insulating layer disposed on the first semiconductor layer;

a second insulating layer disposed on the first insulating layer;

a first oxide material layer disposed between the substrate and the second insulating layer and having water solubility; and

a first conductive layer disposed on the second insulating layer and electrically connected to the first semiconductor layer through a first contact hole defined in the first insulating layer, the second insulating layer, and the first oxide material layer.

2. The display apparatus of claim 1 , wherein the first oxide material layer is disposed between the first insulating layer and the second insulating layer.

3. The display apparatus of claim 1 , wherein the first oxide material layer is disposed between the first semiconductor layer and the first insulating layer.

4. The display apparatus of claim 1 , wherein the first oxide material layer includes at least one selected from molybdenum oxide (MoO x ) and tungsten oxide (WO x ).

5. The display apparatus of claim 1 , wherein the first oxide material layer has a thickness in a range of about 30 Å to about 300 Å.

6. The display apparatus of claim 1 , further comprising:

a first gate electrode insulated from the first semiconductor layer; and

an upper electrode disposed between the first insulating layer and the second insulating layer.

7. The display apparatus of claim 6 , wherein the first oxide material layer is disposed directly on the upper electrode.

8. The display apparatus of claim 1 , further comprising:

a second semiconductor layer disposed in a layer different from a layer in which the first semiconductor layer is disposed,

wherein

the first semiconductor layer includes an oxide semiconductor material, and

the second semiconductor layer includes a silicon semiconductor material.

9. The display apparatus of claim 8 , wherein the second semiconductor layer is disposed closer to the substrate than the first semiconductor layer.

10. The display apparatus of claim 8 , further comprising:

a second conductive layer disposed on the second insulating layer,

wherein the second conductive layer is electrically connected to the second semiconductor layer through a second contact hole.

11. The display apparatus of claim 8 , further comprising:

a second gate electrode insulated from the second semiconductor layer; and

a second oxide material layer disposed on the second gate electrode.

12. The display apparatus of claim 1 , further comprising:

a bottom metal layer disposed on the substrate; and

a buffer layer disposed between the bottom metal layer and the first semiconductor layer.

13. The display apparatus of claim 12 , wherein the first oxide material layer is disposed between the bottom metal layer and the first semiconductor layer.

14. The display apparatus of claim 12 , wherein the first conductive layer is electrically connected to the bottom metal layer through a third contact hole.

15. A method of manufacturing a display apparatus, the method comprising:

providing a semiconductor layer on a substrate;

providing a first insulating layer on the semiconductor layer;

providing an oxide material layer having water solubility on the first insulating layer;

providing a second insulating layer on the oxide material layer;

providing a photoresist pattern on the second insulating layer;

forming a contact hole by etching the first insulating layer, the oxide material layer, and the second insulating layer by using the photoresist pattern as an etch mask; and

stripping the photoresist pattern.

16. The method of claim 15 , wherein

at least a portion of the oxide material layer is removed when the photoresist pattern is stripped.

17. The method of claim 15 , wherein the oxide material layer includes at least one selected from molybdenum oxide (MoO x ) and tungsten oxide (WO x ).

18. The method of claim 15 , wherein the oxide material layer has a thickness in a range of about 30 Å to about 300 Å.

19. The method of claim 15 , further comprising:

after the stripping the photoresist pattern, providing a conductive layer on the second insulating layer.

20. The method of claim 19 , wherein the conductive layer is electrically connected to the semiconductor layer through the contact hole.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (16)