IP Library Granted Patent US 12,374,913
Granted Patent B2
US 12,374,913 · App. 17/592,398 · Granted Jul 29, 2025

Charge/discharge management in electrochemical cells, including partial cycle control

Inventors: Yuriy V. Mikhaylik (Tucson, AZ); Chariclea Scordilis-Kelley (Tucson, AZ)
Assignee: Sion Power Corporation
H02J7/007G01R31/382G01R31/396H01M10/425H01M10/441H01M10/482H02J7/0068H01M2010/4271
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,374,913
App. No.
17/592,398
Granted
Jul 29, 2025
Kind
B2
Abstract

Electrochemical cell and battery management systems are generally provided. The systems can comprise an electrochemical cell and a controller. In some cases, the controller can be used to control various aspects of the charge and/or discharge of the electrochemical cell. In some cases, the system can comprise one or more strings of cells.

Claims (74)

1. An electrochemical cell management system comprising:

an electrochemical cell; and

at least one controller configured to:

control the cell such that the cell is charged over a first state of charge range having breadth of at least 20%,

wherein an average charging rate over a first portion of the first state of charge range is lower than an average charging rate over a second portion of the first state of charge range,

wherein the first portion spans at least 2% of the first state of charge range and the second portion spans at least 2% of the first state of charge range,

wherein the first portion occurs before the second portion, and

wherein the at least one controller is configured to:

control the cell such that the cell is discharged over a second state of charge range having breadth of at least 2% and at most 90%, and then discharged over a third state of charge range having breadth of at least 2%,

wherein an average discharging rate over the second state of charge range is at least 2 times an average discharging rate over the third state of charge range.

2. An electrochemical cell management system comprising:

an electrochemical cell; and

at least one controller configured to:

control the cell such that the cell is charged over a first state of charge range having breadth of at least 2% and at most 90%, and then charged over a second state of charge range,

wherein an average charging rate over the first state of charge range is at most 0.5 times an average charging rate over the second state of charge range,

wherein the at least one controller is configured to:

control the cell such that the cell is discharged over a third state of charge range having breadth of at least 2% and at most 90%, and then discharged over a fourth state of charge range having breadth of at least 2%,

wherein an average discharging rate over the third state of charge range is at least 2 times an average discharging rate over the fourth state of charge range.

3. An electrochemical cell management system comprising:

an electrochemical cell; and

at least one controller configured to:

control the cell such that the cell is charged over a first state of charge range having breadth of at least 20%,

wherein an average charging rate over a first portion of the first state of charge range is lower than an average charging rate over a second portion of the first state of charge range,

wherein the first portion spans at least 2% of the first state of charge range and the second portion spans at least 2% of the first state of charge range,

wherein the first portion occurs before the second portion, and

wherein the at least one controller is configured to:

control the cell such that the cell is discharged over a second state of charge range having breadth of at least 2% and at most 90%, then discharged over a third state of charge range having breadth of at least 2%, and then discharged over a fourth state of charge range having breadth of at least 2%,

wherein an average discharging rate over the second state of charge range is higher than an average discharging rate over the third state of charge range, and

wherein the average discharging rate over the third state of charge range is higher than an average discharging rate over the fourth state of charge range.

4. The electrochemical cell management system of claim 1 , wherein the cell is discharged over the third state of charge range after the cell is charged over the second state of charge range.

5. The electrochemical cell management system of claim 2 , wherein the at least one controller is configured to:

control the cell such that the cell is discharged over a third state of charge range having breadth of at least 2% and at most 90%, then discharged over a fourth state of charge range having breadth of at least 2%, and then discharged over a fifth state of charge range having breadth of at least 2%,

wherein an average discharging rate over the third state of charge range is higher than an average discharging rate over the fourth state of charge range, and

wherein the average discharging rate over the fourth state of charge range is higher than an average discharging rate over the fifth state of charge range.

6. The electrochemical cell management system of claim 2 , wherein the cell is discharged over the third state of charge range after the cell is charged over the second state of charge range.

7. An electrochemical cell management system comprising:

an electrochemical cell; and

at least one controller configured to:

control the cell such that the cell is charged over a first state of charge range having breadth of at least 2% and at most 90%, and then charged over a second state of charge range,

wherein an average charging rate over the first state of charge range is at most 0.5 times an average charging rate over the second state of charge range, and

wherein the at least one controller is configured to:

control the cell such that the cell is discharged over a fourth state of charge range having breadth of at least 2% and at most 90%, and then discharged over a fifth state of charge range having breadth of at least 2%,

wherein an average discharging rate over the fourth state of charge range is at least 2 times an average discharging rate over the fifth state of charge range.

8. An electrochemical cell management method comprising:

controlling an electrochemical cell such that the cell is charged over a first state of charge range having breadth of at least 20%,

wherein an average charging rate over a first portion of the first state of charge range is lower than an average charging rate over a second portion of the first state of charge range,

wherein the first portion spans at least 2% of the first state of charge range and the second portion spans at least 2% of the first state of charge range,

wherein the first portion occurs before the second portion,

wherein the method comprises controlling the cell such that the cell is discharged over a second state of charge range having breadth of at least 2% and at most 90%, and then discharged over a third state of charge range having breadth of at least 2%, and

wherein an average discharging rate over the second state of charge range is at least 2 times an average discharging rate over the third state of charge range.

9. An electrochemical cell management method comprising:

controlling an electrochemical cell such that the cell is charged over a first state of charge range having breadth of at least 2% and at most 90%, and then charged over a second state of charge range,

wherein an average charging rate over the first state of charge range is at most 0.5 times an average charging rate over the second state of charge range,

wherein the method comprises controlling the cell such that the cell is discharged over a third state of charge range having breadth of at least 2% and at most 90%, and then discharged over a fourth state of charge range having breadth of at least 2%, and

wherein an average discharging rate over the third state of charge range is at least 2 times an average discharging rate over the fourth state of charge range.

10. An electrochemical cell management method, comprising:

controlling an electrochemical cell such that the cell is charged over a first state of charge range having breadth of at least 20%,

wherein an average charging rate over a first portion of the first state of charge range is lower than an average charging rate over a second portion of the first state of charge range,

wherein the first portion spans at least 2% of the first state of charge range and the second portion spans at least 2% of the first state of charge range,

wherein the first portion occurs before the second portion,

wherein the method comprises controlling the cell such that the cell is discharged over a second state of charge range having breadth of at least 2% and at most 90%, then discharged over a third state of charge range having breadth of at least 2%, and then discharged over a fourth state of charge range having breadth of at least 2%,

wherein an average discharging rate over the second state of charge range is higher than an average discharging rate over the third state of charge range, and

wherein the average discharging rate over the third state of charge range is higher than an average discharging rate over the fourth state of charge range.

11. The electrochemical cell management method of claim 8 , wherein the cell is discharged over the third state of charge range after the cell is charged over the second state of charge range.

12. The electrochemical cell management method of claim 9 , comprising:

controlling the cell such that the cell is discharged over a third state of charge range having breadth of at least 2% and at most 90%, then discharged over a fourth state of charge range having breadth of at least 2%, and then discharged over a fifth state of charge range having breadth of at least 2%,

wherein an average discharging rate over the third state of charge range is higher than an average discharging rate over the fourth state of charge range, and

wherein the average discharging rate over the fourth state of charge range is higher than an average discharging rate over the fifth state of charge range.

13. The electrochemical cell management method of claim 9 , wherein the cell is discharged over the third state of charge range after the cell is charged over the second state of charge range.

14. An electrochemical cell management method, comprising:

controlling an electrochemical cell such that the cell is charged over a first state of charge range having breadth of at least 2% and at most 90%, and then charged over a second state of charge range,

wherein an average charging rate over the first state of charge range is at most 0.5 times an average charging rate over the second state of charge range, and

controlling the cell such that the cell is discharged over a fourth state of charge range having breadth of at least 2% and at most 90%, and then discharged over a fifth state of charge range having breadth of at least 2%,

wherein an average discharging rate over the fourth state of charge range is at least 2 times an average discharging rate over the fifth state of charge range.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2022
From: HAMBLIN, GLENN ALAN; MIKHAYLIK, YURIY V.; SCORDILIS-KELLEY, CHARICLEA; NIEDZWIECKI, MARK; STEWART, SCOTT; HUGHES, JOHN
To: SION POWER CORPORATION
Reel/Frame 060925/0632 →
Continuity (4)
Provisional Application 63240859 · Sep 3, 2021
Provisional Application 63184639 · May 5, 2021
Provisional Application 63146512 · Feb 5, 2021
Related Publication 20220271537A1 · Aug 25, 2022
References Cited (400)
US 5506068A · Dan et al. · 1996 [cited by applicant]
US 5543245A · Andrieu et al. · 1996 [cited by applicant]
US 5648187A · Skotheim · 1997 [cited by applicant]
US 5764030A · Gaza · 1998 [cited by applicant]
US 5808371A · Kon'i et al. · 1998 [cited by applicant]
US 5818201A · Stockstad et al. · 1998 [cited by applicant]
US 5914606A · Becker-Irvin · 1999 [cited by applicant]
US 5919587A · Mukherjee et al. · 1999 [cited by applicant]
US 5961672A · Skotheim et al. · 1999 [cited by applicant]
US 5998966A · Gaza · 1999 [cited by applicant]
US 6002237A · Gaza · 1999 [cited by applicant]
US 6137265A · Cummings et al. · 2000 [cited by applicant]
US 6238821B1 · Mukherjee et al. · 2001 [cited by applicant]
US 6329789B1 · Gavrilov et al. · 2001 [cited by applicant]
US 6377030B1 · Asao et al. · 2002 [cited by applicant]
US 6605375B2 · Ovshinsky et al. · 2003 [cited by applicant]
US 6653819B2 · Nagata et al. · 2003 [cited by applicant]
US 6733924B1 · Skotheim et al. · 2004 [cited by applicant]
US 6746804B2 · Gan et al. · 2004 [cited by applicant]
US 6797428B1 · Skotheim et al. · 2004 [cited by applicant]
US 6936381B2 · Skotheim et al. · 2005 [cited by applicant]
US 7193392B2 · King et al. · 2007 [cited by applicant]
US 7245108B2 · Chertok et al. · 2007 [cited by applicant]
US 7247408B2 · Skotheim et al. · 2007 [cited by applicant]
US 7250745B2 · Yasukouchi et al. · 2007 [cited by applicant]
US 7378818B2 · Fowler et al. · 2008 [cited by applicant]
US 7400113B2 · Osborne · 2008 [cited by applicant]
US 7494729B2 · Odaohhara · 2009 [cited by applicant]
US 7579112B2 · Chiang et al. · 2009 [cited by applicant]
US 7579842B2 · Hunter et al. · 2009 [cited by applicant]
US 7646170B2 · Gan et al. · 2010 [cited by applicant]
US 7659692B2 · Sainomoto et al. · 2010 [cited by applicant]
US 7688075B2 · Kelley et al. · 2010 [cited by applicant]
US 7719134B2 · Hashimoto et al. · 2010 [cited by applicant]
US 7728555B2 · Seo et al. · 2010 [cited by applicant]
US 7771870B2 · Affinito et al. · 2010 [cited by applicant]
US 7785730B2 · Affinito et al. · 2010 [cited by applicant]
US 7790315B2 · Mukherjee et al. · 2010 [cited by applicant]
US 7830168B2 · Newman · 2010 [cited by applicant]
US 7939198B2 · Mukherjee et al. · 2011 [cited by applicant]
US 7952385B2 · Newman · 2011 [cited by applicant]
US 7988746B2 · Chiang et al. · 2011 [cited by applicant]
US 8076024B2 · Affinito et al. · 2011 [cited by applicant]
US 8084102B2 · Affinito · 2011 [cited by applicant]
US 8087309B2 · Kelley et al. · 2012 [cited by applicant]
US 8105717B2 · Skotheim et al. · 2012 [cited by applicant]
US 8168326B2 · Chiang et al. · 2012 [cited by applicant]
US 8197971B2 · Skotheim et al. · 2012 [cited by applicant]
US 8198862B2 · Zhang et al. · 2012 [cited by applicant]
US 8203309B2 · Maegawa · 2012 [cited by applicant]
US 8206468B2 · Chiang et al. · 2012 [cited by applicant]
US 8206469B2 · Chiang et al. · 2012 [cited by applicant]
US 8241789B2 · Chiang et al. · 2012 [cited by applicant]
US 8242745B2 · Zhang et al. · 2012 [cited by applicant]
US 8264205B2 · Kopera · 2012 [cited by applicant]
US 8288992B2 · Kramer et al. · 2012 [cited by applicant]
US 8330419B2 · Kim et al. · 2012 [cited by applicant]
US 8338034B2 · Affinito et al. · 2012 [cited by applicant]
US 8405349B2 · Kikinis et al. · 2013 [cited by applicant]
US 8405351B2 · Chaturvedi et al. · 2013 [cited by applicant]
US 8415054B2 · Skotheim et al. · 2013 [cited by applicant]
US 8427106B2 · Kim et al. · 2013 [cited by applicant]
US 8508191B2 · Kim et al. · 2013 [cited by applicant]
US 8518578B2 · Swan · 2013 [cited by applicant]
US 8519670B2 · Castelaz et al. · 2013 [cited by applicant]
US 8547065B2 · Trigiani · 2013 [cited by applicant]
US 8580430B2 · Chiang et al. · 2013 [cited by applicant]
US 8586238B2 · Chiang et al. · 2013 [cited by applicant]
US 8603680B2 · Affinito et al. · 2013 [cited by applicant]
US 8617748B2 · Mikhaylik et al. · 2013 [cited by applicant]
US 8623557B2 · Skotheim et al. · 2014 [cited by applicant]
US 8723480B2 · Lim et al. · 2014 [cited by applicant]
US 8728661B2 · Skotheim et al. · 2014 [cited by applicant]
US 8753771B2 · Skotheim et al. · 2014 [cited by applicant]
US 8760118B2 · Christensen et al. · 2014 [cited by applicant]
US 8798832B2 · Kawahara et al. · 2014 [cited by applicant]
US 8810201B2 · Yun et al. · 2014 [cited by applicant]
US 8823323B2 · Troxel et al. · 2014 [cited by applicant]
US 8871387B2 · Wang et al. · 2014 [cited by applicant]
US 8884585B2 · Troxel et al. · 2014 [cited by applicant]
US 8928286B2 · Amiruddin et al. · 2015 [cited by applicant]
US 8936870B2 · Affinito et al. · 2015 [cited by applicant]
US 8942075B2 · Yoda · 2015 [cited by applicant]
US 8968928B2 · Wang et al. · 2015 [cited by applicant]
US 9000727B2 · Castelaz et al. · 2015 [cited by applicant]
US 9005311B2 · Safont et al. · 2015 [cited by applicant]
US 9005809B2 · Wilkening et al. · 2015 [cited by applicant]
US 9034421B2 · Mikhaylik et al. · 2015 [cited by applicant]
US 9035496B2 · Kang · 2015 [cited by applicant]
US 9040197B2 · Affinito et al. · 2015 [cited by applicant]
US 9040201B2 · Affinito et al. · 2015 [cited by applicant]
US 9065149B2 · Skotheim et al. · 2015 [cited by applicant]
US 9077041B2 · Burnside et al. · 2015 [cited by applicant]
US 9077184B2 · Fujita et al. · 2015 [cited by applicant]
US 9088164B2 · Shim · 2015 [cited by applicant]
US 9105938B2 · Scordilis-Kelley et al. · 2015 [cited by applicant]
US 9130379B2 · Sakabe et al. · 2015 [cited by applicant]
US 9197081B2 · Finberg et al. · 2015 [cited by applicant]
US 9214678B2 · Mikhaylik · 2015 [cited by applicant]
US 9306252B2 · Kristofek et al. · 2016 [cited by applicant]
US 9325190B2 · Suzuki · 2016 [cited by applicant]
US 9397342B2 · Skotheim et al. · 2016 [cited by applicant]
US 9419274B2 · Wilkening et al. · 2016 [cited by applicant]
US 9490478B2 · Mikhaylik et al. · 2016 [cited by applicant]
US 9527402B2 · Wyatt et al. · 2016 [cited by applicant]
US 9531009B2 · Kumaresan et al. · 2016 [cited by applicant]
US 9537132B2 · Butzmann · 2017 [cited by applicant]
US 9537326B2 · Troxel et al. · 2017 [cited by applicant]
US 9548492B2 · Affinito et al. · 2017 [cited by applicant]
US 9559348B2 · Kumaresan et al. · 2017 [cited by applicant]
US 9564763B2 · Finberg et al. · 2017 [cited by applicant]
US 9564767B2 · Takahashi et al. · 2017 [cited by applicant]
US 9577243B2 · Schmidt et al. · 2017 [cited by applicant]
US 9577267B2 · Scordilis-Kelley et al. · 2017 [cited by applicant]
US 9577289B2 · Liao et al. · 2017 [cited by applicant]
US 9583757B2 · Park et al. · 2017 [cited by applicant]
US 9653735B2 · Skotheim et al. · 2017 [cited by applicant]
US 9653750B2 · Laramie et al. · 2017 [cited by applicant]
US 9696383B2 · Kikuchi et al. · 2017 [cited by applicant]
US 9711784B2 · Kelley et al. · 2017 [cited by applicant]
US 9728768B2 · Mikhaylik et al. · 2017 [cited by applicant]
US 9735411B2 · Viner et al. · 2017 [cited by applicant]
US 9742218B2 · Tochigi et al. · 2017 [cited by applicant]
US 9755268B2 · Fleischmann et al. · 2017 [cited by applicant]
US 9780404B2 · Scordilis-Kelley et al. · 2017 [cited by applicant]
US 9806328B2 · Park et al. · 2017 [cited by applicant]
US 9812732B2 · Jiang et al. · 2017 [cited by applicant]
US 9819201B2 · Suzuki · 2017 [cited by applicant]
US 9825328B2 · Du et al. · 2017 [cited by applicant]
US 9853287B2 · Mikhaylik et al. · 2017 [cited by applicant]
US 9876367B2 · Trigiani · 2018 [cited by applicant]
US 9899846B2 · Carver et al. · 2018 [cited by applicant]
US 9914368B1 · Marcicki et al. · 2018 [cited by applicant]
US 9947963B2 · Du et al. · 2018 [cited by applicant]
US 9966780B2 · Sherstyuk et al. · 2018 [cited by applicant]
US 9994959B2 · Laramie et al. · 2018 [cited by applicant]
US 9994960B2 · Laramie et al. · 2018 [cited by applicant]
US 9997765B2 · Park et al. · 2018 [cited by applicant]
US 10020479B2 · Mikhaylik et al. · 2018 [cited by applicant]
US 10020485B2 · Wyatt et al. · 2018 [cited by applicant]
US 10020512B2 · Gronwald et al. · 2018 [cited by applicant]
US 10050308B2 · Liao et al. · 2018 [cited by applicant]
US 10062892B2 · Wyatt et al. · 2018 [cited by applicant]
US 10069135B2 · Fleischmann et al. · 2018 [cited by applicant]
US 10069146B2 · Skotheim et al. · 2018 [cited by applicant]
US 10088529B2 · Joe · 2018 [cited by applicant]
US 10099562B2 · Jin et al. · 2018 [cited by applicant]
US 10122043B2 · Du et al. · 2018 [cited by applicant]
US 10148105B2 · Lei · 2018 [cited by applicant]
US 10230246B2 · Troxel et al. · 2019 [cited by applicant]
US 10236695B2 · Weyen · 2019 [cited by applicant]
US 10243202B2 · Fleischmann et al. · 2019 [cited by applicant]
US 10253744B2 · Garrard et al. · 2019 [cited by applicant]
US 10259337B2 · Alser et al. · 2019 [cited by applicant]
US 10279700B2 · Takebayashi et al. · 2019 [cited by applicant]
US 10298034B2 · Lei · 2019 [cited by applicant]
US 10312545B2 · Scordilis-Kelley et al. · 2019 [cited by applicant]
US 10319988B2 · Kelley et al. · 2019 [cited by applicant]
US 10320027B2 · Scordilis-Kelley et al. · 2019 [cited by applicant]
US 10320031B2 · Mikhaylik et al. · 2019 [cited by applicant]
US 10320204B2 · Ishikawa · 2019 [cited by applicant]
US 10333134B2 · Mikhaylik et al. · 2019 [cited by applicant]
US 10333149B2 · Affinito et al. · 2019 [cited by applicant]
US 10388943B2 · Bonhomme et al. · 2019 [cited by applicant]
US 10388987B2 · Du et al. · 2019 [cited by applicant]
US 10411499B2 · Hall et al. · 2019 [cited by applicant]
US 10431808B2 · Park et al. · 2019 [cited by applicant]
US 10436850B2 · Hatano et al. · 2019 [cited by applicant]
US 10439192B2 · Wyatt et al. · 2019 [cited by applicant]
US 10449870B2 · Chang et al. · 2019 [cited by applicant]
US 10461333B2 · Mikhaylik et al. · 2019 [cited by applicant]
US 10461372B2 · Laramie et al. · 2019 [cited by applicant]
US 10468721B2 · Liao et al. · 2019 [cited by applicant]
US 10490796B2 · Laramie et al. · 2019 [cited by applicant]
US 10505234B2 · Zhu et al. · 2019 [cited by applicant]
US 10516155B2 · Park et al. · 2019 [cited by applicant]
US 10535902B2 · Laramie et al. · 2020 [cited by applicant]
US 10541448B2 · Mikhaylik et al. · 2020 [cited by applicant]
US 10553893B2 · Laramie et al. · 2020 [cited by applicant]
US 10557893B2 · Fukushima · 2020 [cited by examiner]
US 10573869B2 · Mikhaylik et al. · 2020 [cited by applicant]
US 10574063B2 · Hellgren et al. · 2020 [cited by applicant]
US 10591979B2 · Kacker et al. · 2020 [cited by applicant]
US 10608278B2 · Liao et al. · 2020 [cited by applicant]
US 10629947B2 · Affinito et al. · 2020 [cited by applicant]
US 10629954B2 · Mikhaylik et al. · 2020 [cited by applicant]
US 10720648B2 · Quero-Mieres et al. · 2020 [cited by applicant]
US 10790678B2 · Zheng et al. · 2020 [cited by applicant]
US 10833513B2 · Coenen · 2020 [cited by applicant]
US 10833523B2 · Hikosaka · 2020 [cited by applicant]
US 10847833B2 · Bunte et al. · 2020 [cited by applicant]
US 10862105B2 · Gronwald et al. · 2020 [cited by applicant]
US 10868306B2 · Mudalige et al. · 2020 [cited by applicant]
US 10868344B2 · Masias et al. · 2020 [cited by applicant]
US 10879527B2 · Laramie et al. · 2020 [cited by applicant]
US 10897152B2 · Takahashi et al. · 2021 [cited by applicant]
US 10919403B2 · Ge et al. · 2021 [cited by applicant]
US 10944094B2 · Liao et al. · 2021 [cited by applicant]
US 10946766B2 · Hamada et al. · 2021 [cited by applicant]
US 10964928B2 · Ashrafzadeh · 2021 [cited by applicant]
US 10965130B2 · Mikhaylik et al. · 2021 [cited by applicant]
US 10985361B2 · Bonhomme et al. · 2021 [cited by applicant]
US 10985563B2 · Kuznetsov · 2021 [cited by applicant]
US 10991925B2 · Wang et al. · 2021 [cited by applicant]
US 10992172B2 · Li et al. · 2021 [cited by applicant]
US 11024923B2 · Liao et al. · 2021 [cited by applicant]
US 11028973B2 · Xiong et al. · 2021 [cited by applicant]
US 11038214B2 · Rahimian et al. · 2021 [cited by applicant]
US 11040624B2 · Jin et al. · 2021 [cited by applicant]
US 11041248B2 · Laramie et al. · 2021 [cited by applicant]
US 11046186B1 · Appelbaum et al. · 2021 [cited by applicant]
US 11056728B2 · Mikhaylik et al. · 2021 [cited by applicant]
US 11063444B2 · Statman · 2021 [cited by applicant]
US 11075535B2 · Kwak et al. · 2021 [cited by applicant]
US 11088395B2 · Mikhaylik et al. · 2021 [cited by applicant]
US 11108076B2 · Scordilis-Kelley et al. · 2021 [cited by applicant]
US 11108077B2 · Scordilis-Kelley et al. · 2021 [cited by applicant]
US 11108251B2 · Kirleis et al. · 2021 [cited by applicant]
US 11121397B2 · Scordilis-Kelley et al. · 2021 [cited by applicant]
US 11128158B2 · Mulawski · 2021 [cited by applicant]
US 11165122B2 · Laramie et al. · 2021 [cited by applicant]
US 11171507B2 · Tihonski et al. · 2021 [cited by applicant]
US 11177467B2 · Park et al. · 2021 [cited by applicant]
US 11183690B2 · Wang et al. · 2021 [cited by applicant]
US 11205910B2 · Walter · 2021 [cited by applicant]
US 11228055B2 · Liao et al. · 2022 [cited by applicant]
US 11233243B2 · Affinito et al. · 2022 [cited by applicant]
US 11239504B2 · Laramie et al. · 2022 [cited by applicant]
US 11245103B2 · Mikhaylik et al. · 2022 [cited by applicant]
US 11251501B2 · Schneider et al. · 2022 [cited by applicant]
US 11289918B2 · Troxel et al. · 2022 [cited by applicant]
US 11316204B2 · Mikhaylik et al. · 2022 [cited by applicant]
US 11322804B2 · Laramie et al. · 2022 [cited by applicant]
US 11367892B2 · Laramie et al. · 2022 [cited by applicant]
US 11404876B2 · Kuznetsov · 2022 [cited by applicant]
US 11418035B2 · Kuznetsov · 2022 [cited by applicant]
US 11424492B2 · Mikhaylik et al. · 2022 [cited by applicant]
US 11437686B2 · Wyatt et al. · 2022 [cited by applicant]
US 11456459B2 · Affinito et al. · 2022 [cited by applicant]
US 11489348B2 · Mikhaylik et al. · 2022 [cited by applicant]
US 11502334B2 · Liao et al. · 2022 [cited by applicant]
US 11515712B2 · Lee et al. · 2022 [cited by applicant]
US 11543086B2 · Xiong et al. · 2023 [cited by applicant]
US 11557753B2 · Kovalev et al. · 2023 [cited by applicant]
US 11569531B2 · Mikhaylik et al. · 2023 [cited by applicant]
US 11575124B2 · Affinito et al. · 2023 [cited by applicant]
US 11581530B2 · Laramie et al. · 2023 [cited by applicant]
US 11616219B2 · Park et al. · 2023 [cited by applicant]
US 11616382B2 · Hale · 2023 [cited by applicant]
US 11637353B2 · Laramie · 2023 [cited by applicant]
US 11658352B2 · Mikhaylik et al. · 2023 [cited by applicant]
US 11664527B2 · Liao et al. · 2023 [cited by applicant]
US 11695165B2 · Kim · 2023 [cited by applicant]
US 11710814B2 · Park et al. · 2023 [cited by applicant]
US 11710847B2 · Laramie et al. · 2023 [cited by applicant]
US 11728528B2 · Laramie et al. · 2023 [cited by applicant]
US 11728661B2 · Kirleis et al. · 2023 [cited by applicant]
US 11735761B2 · Scordilis-Kelley et al. · 2023 [cited by applicant]
US 11742477B2 · Laramie et al. · 2023 [cited by applicant]
US 11750014B2 · Burkell et al. · 2023 [cited by applicant]
US 11784297B2 · Liao et al. · 2023 [cited by applicant]
US 11784298B2 · Bonhomme et al. · 2023 [cited by applicant]
US 11811045B2 · Park et al. · 2023 [cited by applicant]
US 11837710B2 · Bonhomme et al. · 2023 [cited by applicant]
US 11848440B2 · Frieberg et al. · 2023 [cited by applicant]
US 11894545B2 · Gronwald et al. · 2024 [cited by applicant]
US 11906597B2 · Ashrafzadeh · 2024 [cited by applicant]
US 11990589B2 · Mikhaylik et al. · 2024 [cited by applicant]
US 12005810B2 · Jin et al. · 2024 [cited by applicant]
US 12034327B2 · Takahashi et al. · 2024 [cited by applicant]
US 12074289B2 · Mikhaylik et al. · 2024 [cited by applicant]
US 20020012846A1 · Skotheim et al. · 2002 [cited by applicant]
US 20020055040A1 · Mukherjee et al. · 2002 [cited by applicant]
US 20020119351A1 · Ovshinsky et al. · 2002 [cited by applicant]
US 20020167296A1 · Nagata et al. · 2002 [cited by applicant]
US 20030099884A1 · Chiang et al. · 2003 [cited by applicant]
US 20030124434A1 · Gan et al. · 2003 [cited by applicant]
US 20040135544A1 · King et al. · 2004 [cited by applicant]
US 20040135545A1 · Fowler et al. · 2004 [cited by applicant]
US 20040135546A1 · Chertok et al. · 2004 [cited by applicant]
US 20040164706A1 · Osborne · 2004 [cited by applicant]
US 20050008935A1 · Skotheim et al. · 2005 [cited by applicant]
US 20050077879A1 · Near · 2005 [cited by applicant]
US 20050116686A1 · Odaohhara · 2005 [cited by applicant]
US 20050196672A1 · Mukherjee et al. · 2005 [cited by applicant]
US 20050285579A1 · Yasukouchi et al. · 2005 [cited by applicant]
US 20060115579A1 · Mukherjee et al. · 2006 [cited by applicant]
US 20060193095A1 · Hunter et al. · 2006 [cited by applicant]
US 20060222954A1 · Skotheim et al. · 2006 [cited by applicant]
US 20060238203A1 · Kelley et al. · 2006 [cited by applicant]
US 20070092798A1 · Spitler · 2007 [cited by applicant]
US 20070108940A1 · Sainomoto et al. · 2007 [cited by applicant]
US 20070111089A1 · Swan · 2007 [cited by applicant]
US 20070139015A1 · Seo et al. · 2007 [cited by applicant]
US 20070221265A1 · Affinito et al. · 2007 [cited by applicant]
US 20070224502A1 · Affinito et al. · 2007 [cited by applicant]
US 20070262751A1 · Gan · 2007 [cited by applicant]
US 20080014501A1 · Skotheim et al. · 2008 [cited by applicant]
US 20080057397A1 · Skotheim et al. · 2008 [cited by applicant]
US 20080187663A1 · Affinito · 2008 [cited by applicant]
US 20080191663A1 · Fowler et al. · 2008 [cited by applicant]
US 20080213672A1 · Skotheim et al. · 2008 [cited by applicant]
US 20080309163A1 · Hashimoto et al. · 2008 [cited by applicant]
US 20080318128A1 · Simoneau et al. · 2008 [cited by applicant]
US 20090035646A1 · Mikhaylik et al. · 2009 [cited by applicant]
US 20090055110A1 · Kelley et al. · 2009 [cited by applicant]
US 20090087722A1 · Sakabe et al. · 2009 [cited by applicant]
US 20090146610A1 · Trigiani · 2009 [cited by applicant]
US 20090167242A1 · Naganuma et al. · 2009 [cited by applicant]
US 20090200986A1 · Kopera · 2009 [cited by applicant]
US 20090291353A1 · Affinito et al. · 2009 [cited by applicant]
US 20100003603A1 · Chiang et al. · 2010 [cited by applicant]
US 20100019718A1 · Salasoo · 2010 [cited by examiner]
US 20100035128A1 · Scordilis-Kelley et al. · 2010 [cited by applicant]
US 20100104948A1 · Skotheim et al. · 2010 [cited by applicant]
US 20100129699A1 · Mikhaylik et al. · 2010 [cited by applicant]
US 20100134070A1 · Yun et al. · 2010 [cited by applicant]
US 20100164430A1 · Lu et al. · 2010 [cited by applicant]
US 20100201339A1 · Newman · 2010 [cited by applicant]
US 20100237828A1 · Maegawa · 2010 [cited by applicant]
US 20100237830A1 · Castelaz et al. · 2010 [cited by applicant]
US 20100239914A1 · Mikhaylik et al. · 2010 [cited by applicant]
US 20100261043A1 · Kim et al. · 2010 [cited by applicant]
US 20100285339A1 · Chaturvedi et al. · 2010 [cited by applicant]
US 20100291442A1 · Wang et al. · 2010 [cited by applicant]
US 20100294049A1 · Kelley et al. · 2010 [cited by applicant]
US 20100327807A1 · Kikinis et al. · 2010 [cited by applicant]
US 20100327811A1 · Affinito et al. · 2010 [cited by applicant]
US 20110005065A1 · Chiang et al. · 2011 [cited by applicant]
US 20110006738A1 · Mikhaylik et al. · 2011 [cited by applicant]
US 20110008531A1 · Mikhaylik et al. · 2011 [cited by applicant]
US 20110014524A1 · Skotheim et al. · 2011 [cited by applicant]
US 20110025258A1 · Kim et al. · 2011 [cited by applicant]
US 20110043951A1 · Newman · 2011 [cited by applicant]
US 20110045346A1 · Chiang et al. · 2011 [cited by applicant]
US 20110057617A1 · Finberg et al. · 2011 [cited by applicant]
US 20110059361A1 · Wilkening et al. · 2011 [cited by applicant]
US 20110068001A1 · Affinito et al. · 2011 [cited by applicant]
US 20110070491A1 · Campbell et al. · 2011 [cited by applicant]
US 20110070494A1 · Campbell et al. · 2011 [cited by applicant]
US 20110076560A1 · Scordilis-Kelley et al. · 2011 [cited by applicant]
US 20110080139A1 · Troxel et al. · 2011 [cited by applicant]
US 20110084663A1 · Troxel et al. · 2011 [cited by applicant]
US 20110089897A1 · Zhang et al. · 2011 [cited by applicant]
US 20110095725A1 · Troxel et al. · 2011 [cited by applicant]
US 20110140650A1 · Zhang et al. · 2011 [cited by applicant]
US 20110151324A1 · Chiang et al. · 2011 [cited by applicant]
US 20110159376A1 · Skotheim et al. · 2011 [cited by applicant]
US 20110165471A9 · Skotheim et al. · 2011 [cited by applicant]
US 20110177398A1 · Affinito et al. · 2011 [cited by applicant]
US 20110206992A1 · Campbell et al. · 2011 [cited by applicant]
US 20110256450A1 · Campbell et al. · 2011 [cited by applicant]
US 20110278170A1 · Chiang et al. · 2011 [cited by applicant]
US 20110285352A1 · Lim et al. · 2011 [cited by applicant]
US 20110313613A1 · Kawahara et al. · 2011 [cited by applicant]
US 20120043940A1 · Affinito et al. · 2012 [cited by applicant]
US 20120048729A1 · Mikhaylik et al. · 2012 [cited by applicant]
US 20120052339A1 · Mikhaylik et al. · 2012 [cited by applicant]
US 20120052397A1 · Mikhaylik et al. · 2012 [cited by applicant]
US 20120056590A1 · Amiruddin et al. · 2012 [cited by applicant]
US 20120070746A1 · Mikhaylik et al. · 2012 [cited by applicant]
US 20120082872A1 · Schmidt et al. · 2012 [cited by applicant]
US 20120082901A1 · Schmidt et al. · 2012 [cited by applicant]
US 20120148904A1 · Swan · 2012 [cited by applicant]
US 20120194139A1 · Sasaki et al. · 2012 [cited by applicant]
US 20120228939A1 · Kaga et al. · 2012 [cited by applicant]
US 20120251896A1 · Chiang et al. · 2012 [cited by applicant]
US 20120261997A1 · Kang · 2012 [cited by applicant]
US 20120276449A1 · Skotheim et al. · 2012 [cited by applicant]
US 20120282530A1 · Chiang et al. · 2012 [cited by applicant]
US 20120306275A1 · Christensen et al. · 2012 [cited by applicant]
US 20120319493A1 · Kim et al. · 2012 [cited by applicant]
US 20120319653A1 · Kumar et al. · 2012 [cited by applicant]
US 20130017441A1 · Affinito et al. · 2013 [cited by applicant]
US 20130095380A1 · Affinito et al. · 2013 [cited by applicant]
US 20130119934A1 · Suzuki · 2013 [cited by applicant]
US 20130143096A1 · Affinito et al. · 2013 [cited by applicant]
US 20130164635A1 · Schmidt et al. · 2013 [cited by applicant]
US 20130207616A1 · Shim · 2013 [cited by applicant]
US 20130216915A1 · Affinito et al. · 2013 [cited by applicant]
US 20130221918A1 · Hill et al. · 2013 [cited by applicant]
US 20130224601A1 · Burnside et al. · 2013 [cited by applicant]
US 20130252103A1 · Mikhaylik · 2013 [cited by applicant]
US 20130258830A1 · Yoda · 2013 [cited by applicant]
US 20130280605A1 · Affinito et al. · 2013 [cited by applicant]
US 20130285613A1 · Fujita et al. · 2013 [cited by applicant]
US 20130300369A1 · Butzmann · 2013 [cited by applicant]
US 20130316072A1 · Scordilis-Kelley et al. · 2013 [cited by applicant]
US 20130330577A1 · Kristofek et al. · 2013 [cited by applicant]
US 20140028098A1 · Trigiani · 2014 [cited by applicant]
US 20140045075A1 · Skotheim et al. · 2014 [cited by applicant]
US 20140062411A1 · Mikhaylik et al. · 2014 [cited by applicant]
US 20140072873A1 · Wang et al. · 2014 [cited by applicant]
US 20140079994A1 · Affinito et al. · 2014 [cited by applicant]
US 20140084870A1 · Castelaz et al. · 2014 [cited by applicant]
US 20140123477A1 · Safont Sempere et al. · 2014 [cited by applicant]
US 20140127419A1 · Fleischmann et al. · 2014 [cited by applicant]
US 20140127577A1 · Fleischmann et al. · 2014 [cited by applicant]
US 20140136132A1 · Maekawa · 2014 [cited by examiner]
US 20140170475A1 · Park et al. · 2014 [cited by applicant]
Cited By (2)
US 12,567,752 US 12,580,394