Semiconductor device structure and method for forming the same
A method for forming a semiconductor device structure is provided. The semiconductor device structure includes a first fin structure formed over a substrate, and the first fin structure includes a plurality of first nanostructures stacked in a vertical direction. The semiconductor device structure further includes a second fin structure formed over the substrate, and the second fin structure includes a plurality of second nanostructures stacked in a vertical direction. The semiconductor device structure further includes a dummy fin structure between the first fin structure and the second fin structure. The dummy fin structure includes a first etching stop layer between a bottom portion and a top portion.
1. A semiconductor device structure, comprising:
a first fin structure formed over a substrate, wherein the first fin structure comprises a plurality of first nanostructures stacked in a vertical direction;
a second fin structure formed over the substrate, wherein the second fin structure comprises a plurality of second nanostructures stacked in a vertical direction; and
a dummy fin structure between the first fin structure and the second fin structure, wherein the dummy fin structure comprises a first etching stop layer between a bottom portion and a top portion, wherein the first etching stop layer has a recessed bottom surface.
2. The semiconductor device structure as claimed in claim 1 , wherein the dielectric constant of the top portion is higher than the dielectric constant of the bottom portion.
3. The semiconductor device structure as claimed in claim 1 , wherein the bottom portion comprises a liner layer and a filling layer formed over the liner layer.
4. The semiconductor device structure as claimed in claim 1 , further comprising:
a first gate structure surrounding the first nanostructures; and
a second gate structure surrounding the second nanostructures, wherein the dummy fin structure is between the first gate structure and the second gate structure.
5. The semiconductor device structure as claimed in claim 4 , further comprising:
a first S/D structure formed adjacent to the first gate structure; and
an inner spacer between the first gate structure and the first S/D structure, wherein a top surface of the first etching stop layer is higher than a topmost surface of the inner spacer.
6. The semiconductor device structure as claimed in claim 5 , further comprising:
a second etching stop layer formed over the first S/D structure, wherein the second etching stop layer is in direct contact with the first etching stop layer.
7. The semiconductor device structure as claimed in claim 1 , further comprising:
a core layer surrounded by the first etching stop layer.
8. The semiconductor device structure as claimed in claim 1 , further comprising:
an isolation structure formed over the substrate, wherein the isolation structure has a first width, the dummy fin structure has a second width, and the first width is greater than the second width.
9. The semiconductor device structure as claimed in claim 1 , wherein a top surface of the first etching stop layer is higher than a topmost first nanostructure.
10. The semiconductor device structure as claimed in claim 1 , wherein the top portion of the dummy fin structure has a recessed bottom surface.
11. A semiconductor device structure, comprising:
a first fin structure formed over a substrate, wherein the first fin structure comprises a plurality of first nanostructures stacked in a vertical direction;
a second fin structure formed over the substrate, wherein the second fin structure comprises a plurality of second nanostructures stacked in a vertical direction;
a first gate structure surrounding the first nanostructures;
a second gate structure surrounding the second nanostructures; and
a first dummy fin structure formed between the first gate structure and the second gate structure, wherein the first dummy fin structure comprises:
a bottom portion;
a middle portion, wherein the middle portion comprises a core layer surrounded by a first etching stop layer; and
a top portion over the middle portion, wherein the top portion comprises a high-k dielectric layer.
12. The semiconductor device structure as claimed in claim 11 , further comprising:
a second dummy fin structure formed adjacent to the second fin structure, wherein a top surface of the first dummy fin structure is higher than a top surface of the second dummy fin structure.
13. The semiconductor device structure as claimed in claim 11 , wherein a top surface of the first etching stop layer is higher than a topmost first nanostructure.
14. The semiconductor device structure as claimed in claim 13 , wherein a top surface of the core layer is higher than a top surface of the first etching stop layer.
15. The semiconductor device structure as claimed in claim 11 , further comprising:
a first S/D structure formed adjacent to the first gate structure; and
an inner spacer between the first gate structure and the first S/D structure, wherein a top surface of the first etching stop layer is higher than a topmost surface of the inner spacer.
16. The semiconductor device structure as claimed in claim 11 , wherein the first gate structure comprises an interfacial layer, and the interfacial layer is in direct contact with the first etching stop layer.
17. A method for forming a semiconductor device structure, comprising:
forming a first fin structure and a second fin structure over a substrate, wherein the first fin structure comprises a plurality of first nanostructures stacked in a vertical direction, and the second fin structure comprises a plurality of second nanostructures stacked in a vertical direction;
forming a first dummy fin structure between the first fin structure and a portion of the second fin structure, wherein the first dummy fin structure comprises a first etching stop layer between a bottom portion and a top portion;
forming a dummy gate structure over the first fin structure, the second fin structure and the first dummy fin structure;
removing a portion of the first fin structure and a second fin structure to form a first recess and a second recess;
forming a first source/drain (S/D) structure and a second S/D structure in the first recess and the second recess, wherein the first dummy fin structure is between the first S/D structure and the second S/D structure; and
forming a second dummy fin structure adjacent to the second nanostructures, wherein a top surface of the first dummy fin structure is higher than a top surface of the second dummy fin structure.
18. The method for forming the semiconductor device structure as claimed in claim 17 , wherein forming the first dummy fin structure between the first fin structure and the second fin structure comprises:
forming a bottom portion between the first fin structure and the second fin structure, wherein the bottom portion comprises a liner layer and a filling layer formed over the liner layer;
forming the first etching stop layer over the bottom portion; and
forming a top portion over the first etching stop layer, wherein the top portion comprises a high-k dielectric layer.
19. The method for forming the semiconductor device structure as claimed in claim 17 , wherein the first nanostructures comprise a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked, wherein the method further comprises:
removing a portion of the first semiconductor layers to form a recess; and
forming an inner spacer in the recess, wherein a top surface of the first etching stop layer is higher than a topmost surface of the inner spacer.
20. The method for forming the semiconductor device structure as claimed in claim 17 , further comprising:
forming a second etching stop layer over the first S/D structure, wherein the second etching stop layer is in direct contact with the first etching stop layer.