Bonding systems, and methods of providing a reducing gas on a bonding system
A bonding system is provided. The bonding system includes (a) a bond head assembly configured for carrying a bonding tool for bonding a semiconductor element to a substrate and (b) a reducing gas conduit for carrying a reducing gas from (i) a reducing gas source to (ii) a bonding area of a bonding system. The reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding area. The reducing gas conduit includes a catalyst for producing excess reducing species in the reducing gas prior to the reducing gas reaching the bonding area.
1. A method of providing a reducing gas on a bonding system, the method comprising the steps of:
(a) providing a bonding tool for bonding a semiconductor element to a substrate, the bonding tool being carried by a bond head assembly, the bond head assembly also carrying a bond head manifold, the bond head manifold for receiving a reducing gas from a reducing gas source and for providing the reducing gas to a bonding area of the bonding system;
(b) carrying the reducing gas in a reducing gas conduit, the reducing gas conduit extending between (i) the reducing gas source and (ii) the bonding area of a bonding system, where the reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding area; and
(c) producing excess reducing species in the reducing gas using a catalyst while the reducing gas is carried in the reducing gas conduit, the catalyst being included in a portion of the reducing gas conduit included in the bond head manifold.
2. The method of claim 1 wherein the catalyst includes a noble metal.
3. The method of claim 1 further comprising the step of providing the reducing gas to the bond head assembly, the reducing gas being provided to the bonding area via the bond head assembly.
4. The method of claim 1 wherein step (c) includes heating the catalyst with a heater.
5. The method of claim 1 wherein the excess reducing species produced in step (c) include H+ ions.
6. The method of claim 1 wherein the catalyst is provided in the reducing gas conduit in a mesh configuration.
7. The method of claim 1 wherein the catalyst is provided in the reducing gas conduit in a perforated block configuration.
8. The method of claim 1 wherein the catalyst is provided on an inner surface of the reducing gas conduit.
9. The method of claim 1 further comprising the steps of (d) providing the reducing gas to a substrate oxide reduction chamber of the bonding system via the reducing gas conduit and (e) receiving the substrate at the bonding area via the substrate oxide reduction chamber prior to bonding the semiconductor element to the substrate.
10. A method of providing a reducing gas on a bonding system, the method comprising the steps of:
(a) providing a bonding tool for bonding a semiconductor element to a substrate, the bonding tool being carried by a bond head assembly, the bond head assembly also carrying a bond head manifold, the bond head manifold for receiving a reducing gas from a reducing gas source and for providing the reducing gas to a bonding area of the bonding system;
(b) carrying the reducing gas in a reducing gas conduit, the reducing gas conduit extending between (i) the reducing gas source and (ii) the bonding area of a bonding system, where the reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding area; and
(c) producing excess reducing species in the reducing gas using a noble metal structure while the reducing gas is carried in the reducing gas conduit, the noble metal structure provided in at least one of (i) a mesh configuration within the reducing gas conduit, (ii) a perforated block configuration within the reducing gas conduit, and (iii) a configuration covering an inner surface of the reducing gas conduit, the noble metal structure being included in a portion of the reducing gas conduit included in the bond head manifold.
11. The method of claim 10 wherein the noble metal structure is a catalyst for producing the excess reducing species in the reducing gas.
12. The method of claim 10 wherein the excess reducing species include H+ ions.
13. The method of claim 10 further comprising the step of providing the reducing gas to the bond head assembly, the reducing gas being provided to the bonding area via the bond head assembly.
14. The method of claim 10 wherein step (c) includes heating the noble metal structure with a heater.
15. The method of claim 10 further comprising the steps of (d) providing the reducing gas to a substrate oxide reduction chamber of the bonding system via the reducing gas conduit and (e) receiving the substrate at the bonding area via the substrate oxide reduction chamber prior to bonding the semiconductor element to the substrate.
16. A method of providing a reducing gas on a bonding system, the method comprising the steps of:
(a) providing a bonding tool for bonding a semiconductor element to a substrate, the bonding tool being carried by a bond head assembly, the bond head assembly also carrying a bond head manifold, the bond head manifold for receiving a reducing gas from a reducing gas source and for providing the reducing gas to a bonding area of the bonding system;
(b) carrying the reducing gas in a reducing gas conduit, the reducing gas conduit extending between (i) the reducing gas source and (ii) the bonding area of a bonding system, where the reducing gas is configured for use during bonding of the semiconductor element to the substrate at the bonding area; and
(c) producing excess reducing species in the reducing gas using a catalyst while the reducing gas is carried in the reducing gas conduit, the catalyst provided in at least one of (i) a mesh configuration within the reducing gas conduit, (ii) a perforated block configuration within the reducing gas conduit, and (iii) a configuration covering an inner surface of the reducing gas conduit, the catalyst being included in a portion of the reducing gas conduit included in the bond head manifold.
17. The method of claim 16 wherein the excess reducing species include H+ ions.
18. The method of claim 16 further comprising the step of providing the reducing gas to the bond head assembly, the reducing gas being provided to the bonding area via the bond head assembly.
19. The method of claim 16 wherein step (c) includes heating the catalyst with a heater.
20. The method of claim 16 further comprising the steps of (d) providing the reducing gas to a substrate oxide reduction chamber of the bonding system via the reducing gas conduit and (e) receiving the substrate at the bonding area via the substrate oxide reduction chamber prior to bonding the semiconductor element to the substrate.