Increased gate length at given footprint for nanosheet device
Semiconductor structures having an increased gate length are provided by providing a vertical stack of suspended semiconductor channel material nanosheets that include a middle portion located between a first end portion and a second end portion. The middle portion of each suspended semiconductor channel material nanosheet is vertically offset from (i.e., higher or lower than) the first end portion and the second end portion of each suspended semiconductor channel material nanosheet.
1. A semiconductor structure comprising:
a vertical stack of semiconductor channel material nanosheets, each semiconductor channel material nanosheet comprising a middle portion located between a first end portion and a second end portion, wherein the middle portion of each semiconductor channel material nanosheet has a height that is less than a height of both the first end portion and the second end portion of each semiconductor channel material nanosheet, and wherein the first end portion of each semiconductor channel material nanosheet has an outermost surface that is vertically aligned to each other, and the second end portion of each semiconductor channel material nanosheet has an outermost surface that is vertically aligned to each other;
a source/drain region extending outward from both the first end portion and the second end portion of each semiconductor channel material nanosheet; and
an undulating semiconductor substrate located beneath the vertical stack of semiconductor channel material nanosheets, wherein the undulating semiconductor substrate comprises a planar surface and an inward bumped surface, the inward bumped surface of the undulating semiconductor substrate is vertically aligned beneath the middle portion of each semiconductor channel material nanosheet and the planar surface is located directly beneath the source/drain region.
2. The semiconductor structure of claim 1 , further comprising a functional gate structure wrapping around at least the middle portion of each semiconductor channel material nanosheet.
3. The semiconductor structure of claim 2 , further comprising a dielectric spacer located above and below the first end portion and the second end portion of each semiconductor channel material nanosheet, wherein the dielectric spacer laterally surrounds the functional gate structure.
4. The semiconductor structure of claim 1 , further comprising an interlayer dielectric material layer located above each source/drain region.
5. The semiconductor structure of claim 1 , wherein the middle portion of each semiconductor channel material nanosheet is not parallel to the planar surface of the underlying undulating semiconductor substrate.
6. A method of forming a semiconductor structure, the method comprising:
forming a vertical stack of semiconductor channel material nanosheets located above an undulating semiconductor substrate, wherein each semiconductor channel material nanosheet comprises a middle portion located between a first end portion and a second end portion, wherein the middle portion of each semiconductor channel material nanosheet is vertically offset from the first end portion and the second end portion of each semiconductor channel material nanosheet, and wherein the first end portion of each semiconductor channel material nanosheet has an outermost surface that is vertically aligned to each other, and the second end portion of each semiconductor channel material nanosheet has an outermost surface that is vertically aligned to each other; and
forming a source/drain region extending outward from both the first end portion and the second end portion of each semiconductor channel material nanosheet, wherein the undulating semiconductor substrate comprises a planar surface and a bumped surface, the bumped surface of the undulating semiconductor substrate is vertically aligned beneath the middle portion of each semiconductor channel material nanosheet and the planar surface is located directly beneath the source/drain region.
7. The method of claim 6 , wherein the middle portion is higher than the first end portion and the second end portion of each semiconductor channel material nanosheet, and the bumped surface of the undulating semiconductor substrate is an outward bumped surface.
8. The method of claim 6 , wherein the middle portion is lower than the first end portion and the second end portion of each semiconductor channel material nanosheet, and wherein the bumped surface of the undulating semiconductor substrate is an inward bumped surface.
9. The method of claim 6 , further comprising forming a functional gate structure wrapping around at least the middle portion of each semiconductor channel material nanosheet.
10. A semiconductor structure comprising:
a vertical stack of semiconductor channel material nanosheets, each semiconductor channel material nanosheet comprising a middle portion located between a first end portion and a second end portion, wherein the middle portion of each semiconductor channel material nanosheet has a height that is vertically offset from a height of both the first end portion and the second end portion of each semiconductor channel material nanosheet, and wherein the first end portion of each semiconductor channel material nanosheet has an outermost surface that is vertically aligned to each other, and the second end portion of each semiconductor channel material nanosheet has an outermost surface that is vertically aligned to each other; and
a source/drain region extending outward from both the first end portion and the second end portion of each semiconductor channel material nanosheet, wherein the undulating semiconductor substrate comprises a planar surface and a bumped surface, the bumped surface of the undulating semiconductor substrate is vertically aligned beneath the middle portion of each semiconductor channel material nanosheet and the planar surface is located directly beneath the source/drain region.