Structure and method using a single crystalline bixbyite oxide layer in a orientation
A layered structure including a substrate in [100] crystal orientation, a crystalline bixbyite oxide layer in [111] orientation, and a metal-containing layer crystallographically matched to the crystalline bixbyite oxide layer. Also a method of fabricating a layered structure comprising steps to: epitaxially deposit a crystalline bixbyite oxide in [111] orientation on a substrate in [100] crystal orientation; and deposit a metal-containing layer on the crystalline bixbyite oxide layer.
1. A layered structure comprising:
a substrate in [100] crystal orientation or a substrate having a plane with a miscut up to an angle of 20° with respect to a [100] crystal orientation;
a crystalline bixbyite oxide layer in [111] orientation that is directly on the substrate with no intervening layers between the crystalline bixbyite oxide layer and the substrate; and
a metal-containing layer crystallographically matched to the crystalline bixbyite oxide layer.
2. The layered structure of claim 1 , wherein the substrate comprises silicon.
3. The layered structure of claim 1 , wherein the crystalline bixbyite oxide layer is epitaxial.
4. The layered structure of claim 1 , wherein the crystalline bixbyite oxide layer is a crystalline rare earth oxide layer.
5. The layered structure of claim 1 , wherein the crystalline bixbyite oxide layer is scandium oxide (Sc 2 O 3 ).
6. The layered structure of claim 1 , wherein the metal-containing layer is epitaxial.
7. The layered structure of claim 6 , wherein the metal-containing layer is a III-N material, GaN, AlN, or molybdenum.
8. The layered structure of claim 1 , wherein the metal-containing layer is sputtered.
9. The layered structure of claim 8 , wherein the metal-containing layer is molybdenum, III-N, AlN, or GaN.
10. A photonic device comprising the layered structure of claim 1 .
11. The photonic device of claim 10 , wherein the photonic device is a photoemitter, a photodetector, a combined photoemitter and photodetector, a light emitting diode (LED), or a micro-light emitting diode (μLED).
12. An electronic device, a radio frequency (RF) filter, or a high electron mobility transistor (HEMT) comprising the layered structure of claim 1 .
13. A method of fabricating a layered structure comprising steps to:
epitaxially deposit a crystalline bixbyite oxide layer in [111] orientation on a substrate in crystal orientation with no intervening layers between the crystalline bixbyite oxide layer and the substrate; and
deposit a metal-containing layer on the crystalline bixbyite oxide layer.
14. The method of claim 13 , wherein the step to deposit the metal-containing layer comprises epitaxial deposition.
15. The method of claim 13 , wherein the step to deposit the metal-containing layer comprises sputtering.