Method of forming a structure including a silicon carbide layer
Methods and systems for forming a structure including a silicon carbide layer and structures formed using the methods and systems are disclosed. Exemplary methods include providing a silicon carbide precursor to the reaction chamber, forming a plasma within the reaction chamber to form an initially flowable, viscous silicon carbide material on a surface of the substrate, wherein the initially viscous carbon material becomes the silicon carbide layer. Exemplary methods can include use of a silicon carbide precursor that includes a carbon-carbon triple bond and/or use of a relatively low plasma power density (e.g., less than 3 W/cm 2 ).
1. A method of forming a structure comprising a layer comprising silicon carbide, the method comprising the steps of:
providing a substrate within a reaction chamber;
providing a precursor to the reaction chamber using a carrier gas, the precursor consisting essentially of molecules, each molecule comprising silicon and carbon;
after the step of providing the precursor has begun, while continuing to supply the precursor to the reaction chamber, applying plasma power to form a plasma within the reaction chamber, where the plasma power is less than 3.0 W/cm 2 surface area of the substrate exposed to the plasma to form initially flowable silicon carbide material that becomes the layer comprising silicon carbide,
wherein each molecule comprises two or more silicon atoms and a carbon-carbon triple bond,
wherein the plasma is formed and maintained from a gas consisting of the carrier gas and the precursor,
wherein the step of applying plasma power ends prior to the step of providing the precursor ending,
wherein the method is not cyclic,
wherein the carrier gas comprises one or more of N 2 and H 2 ,
wherein a temperature within the reaction chamber is less than 120° C.,
wherein the initially flowable silicon carbide material flows within a gap on a surface of the substrate to fill the gap, and
wherein each molecule is represented by the general formula:
where R 1 -R 6 is independently selected from the group consisting of Cx-Hy alkyl groups, where X ranges from 1 to 4 and Y ranges from 1 to 9.
2. The method of claim 1 , wherein a molecular weight of the molecule is greater than 150 Da.
3. The method of claim 1 , wherein at least one of R 1 -R 6 is a methyl group.
4. The method of claim 1 , wherein each molecule comprises bis(trimethylsilyl) acetylene.
5. The method of claim 1 , wherein the plasma power is between about 50 and about 300 W.
6. The method of claim 1 , wherein the plasma power is between about 0.5 and about 3.0 W/cm 2 of the surface of the substrate.
7. The method of any of claim 1 , wherein a frequency of the plasma power is between about 13.56 MHz and about 27.12 MHz.
8. The method of claim 1 , wherein the carrier gas consists of one or more of argon or helium and the one or more of hydrogen and nitrogen.
9. The method of claim 1 , wherein the method is a plasma-enhanced chemical deposition method.
10. The method of claim 1 , wherein a pressure within the reaction chamber during the step of applying is between about 100 Pa and about 3,000 Pa.
11. A method of filling a trench on a surface of a substrate using the method of claim 1 .
12. The method of claim 11 , wherein an aspect ratio of the trench is greater than 0.5.
13. The method of any of claim 1 , wherein the carrier gas consists of argon, helium, and hydrogen.