IP Library › Granted Patent US 12,387,126
Granted Patent B2
US 12,387,126 · App. 18/014,221 · Granted Aug 12, 2025

Method for producing semiconductor apparatus for quantum computer

Inventors: Tsuyoshi Ohtsuki (Annaka, JP); Hiroshi Takeno (Annaka, JP)
Assignee: SHIN-ETSU HANDOTAI CO., LTD.
G06N10/40H01L21/263H01L21/3221H01P3/003
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Quick Facts
Patent No.
US 12,387,126
App. No.
18/014,221
Granted
Aug 12, 2025
Kind
B2
Abstract

A method produces a semiconductor apparatus for a quantum computer. The apparatus includes: a semiconductor substrate; a quantum computer device formed on the semiconductor substrate; and a peripheral circuit formed on the semiconductor substrate and connected to the quantum computer device. The apparatus is to be used as a quantum computer. The method includes: a step of forming the quantum computer device and the peripheral circuit on the semiconductor substrate; and a step of deactivating a carrier in the semiconductor substrate by irradiation of a particle beam to at least a formation part for the quantum computer device and a formation part for the peripheral circuit in the semiconductor substrate. The method for producing a semiconductor apparatus for a quantum computer can produce a semiconductor apparatus for a quantum computer having excellent 3HD characteristics.

Claims (14)

1. A method for producing a semiconductor apparatus for a quantum computer, the apparatus comprising: a semiconductor substrate; a quantum computer device formed on the semiconductor substrate; and a peripheral circuit formed on the semiconductor substrate and connected to the quantum computer device and the apparatus being to be used as a quantum computer, the method comprising:

a step of forming the quantum computer device and the peripheral circuit on the semiconductor substrate; and

a step of deactivating a carrier in the semiconductor substrate by irradiation of a particle beam to at least a formation part for the quantum computer device and a formation part for the peripheral circuit in the semiconductor substrate.

2. The method for producing a semiconductor apparatus for a quantum computer according to claim 1 , wherein by the irradiation of the particle beam, a resistivity of the formation part for the quantum computer device and a resistivity of the formation part for the peripheral circuit in the semiconductor substrate are made to 3000 Ω·cm or more.

3. The method for producing a semiconductor apparatus for a quantum computer according to claim 1 , wherein the particle beam is irradiated to at least the formation part for the quantum computer device and the formation part for the peripheral circuit in the semiconductor substrate before forming the quantum computer device and the peripheral circuit on the semiconductor substrate.

4. The method for producing a semiconductor apparatus for a quantum computer according to claim 2 , wherein the particle beam is irradiated to at least the formation part for the quantum computer device and the formation part for the peripheral circuit in the semiconductor substrate before forming the quantum computer device and the peripheral circuit on the semiconductor substrate.

5. The method for producing a semiconductor apparatus for a quantum computer according to claim 1 , wherein the particle beam is irradiated to at least the formation part for the quantum computer device and the formation part for the peripheral circuit in the semiconductor substrate after forming the quantum computer device and the peripheral circuit on the semiconductor substrate.

6. The method for producing a semiconductor apparatus for a quantum computer according to claim 2 , wherein the particle beam is irradiated to at least the formation part for the quantum computer device and the formation part for the peripheral circuit in the semiconductor substrate after forming the quantum computer device and the peripheral circuit on the semiconductor substrate.

7. The method for producing a semiconductor apparatus for a quantum computer according to claim 1 , wherein an electron beam is irradiated as the particle beam.

8. The method for producing a semiconductor apparatus for a quantum computer according to claim 2 , wherein an electron beam is irradiated as the particle beam.

9. The method for producing a semiconductor apparatus for a quantum computer according to claim 3 , wherein an electron beam is irradiated as the particle beam.

10. The method for producing a semiconductor apparatus for a quantum computer according to claim 4 , wherein an electron beam is irradiated as the particle beam.

11. The method for producing a semiconductor apparatus for a quantum computer according to claim 5 , wherein an electron beam is irradiated as the particle beam.

12. The method for producing a semiconductor apparatus for a quantum computer according to claim 6 , wherein an electron beam is irradiated as the particle beam.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2023
From: OHTSUKI, TSUYOSHI; TAKENO, HIROSHI
To: SHIN-ETSU HANDOTAI CO., LTD.
Reel/Frame 062258/0809 →
Priority Claims (1)
JP 2020-128609 · Jul 29, 2020 · national
Continuity (1)
Related Publication 20230276716A1 · Aug 31, 2023
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