Semiconductor device and method of manufacturing semiconductor device
An insulating film is formed on a front surface of a semiconductor layer in which a trench has been formed. An electric conductor is embedded into the trench, and the insulating film that has been formed on the semiconductor layer surface and that is adjacent to the trench is removed by etching so as to expose the semiconductor layer surface. The semiconductor layer surface is further etched such that the semiconductor layer surface is lowered relative to an upper end of the insulating film covering the inner surface of the trench. After that, a Schottky barrier junction is formed at the semiconductor layer surface.
1. A semiconductor device comprising:
a semiconductor layer in which a trench has been formed;
an insulating film covering an inner surface of the trench;
an electric conductor embedded in the trench covered with the insulating film; and
a Schottky barrier layer forming a Schottky barrier junction together with a surface of the semiconductor layer adjacent to the trench,
wherein the Schottky barrier junction and the Schottky barrier layer are positioned lower than an upper end of the insulating film covering the inner surface of the trench;
wherein an upper surface electrode is formed above and in direct contact with the top surface of the electric conductor and the Schottky barrier layer.
2. The semiconductor device according to claim 1 ,
wherein a lower area of an end surface of the Schottky barrier layer forming the Schottky barrier junction, the lower area being at least 50% of the end surface, overlaps and is in contact with an upper end portion of the insulating film in a thickness direction.
3. The semiconductor device according to claim 1 ,
wherein 100% of an area of an end surface of the Schottky barrier layer forming the Schottky barrier junction overlaps and is in contact with an upper end portion of the insulating film in a thickness direction.
4. The semiconductor device according to claim 3 ,
wherein the upper end portion of the insulating film projects in such a manner as to be located above an upper surface of the Schottky barrier layer that is a surface opposite to a surface of the Schottky barrier layer forming the Schottky barrier junction.
5. The semiconductor device according to claim 1 ,
wherein the Schottky barrier layer is made of silicide.