Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.
1. A method for fabricating a semiconductor device, comprising:
forming a first inter-metal dielectric (IMD) layer on a substrate;
forming a contact hole in the first IMD layer;
forming a liner in the contact hole;
forming a bottom electrode layer on the liner in the contact hole;
forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and
removing the MTJ stack, the bottom electrode layer, and the liner to form a MTJ on a bottom electrode, wherein the liner comprises a vertical portion, a sidewall of the MTJ is aligned with a sidewall of the vertical portion, and a top surface of the vertical portion is higher than a top surface of the first IMD layer.
2. The method of claim 1 , further comprising:
forming a second IMD layer on the substrate;
forming a metal interconnection in the second IMD layer;
forming the first IMD layer on the second IMD layer; and
forming the contact hole in the first IMD layer for exposing the metal interconnection.
3. The method of claim 1 , further comprising forming the liner in the contact hole before forming the bottom electrode layer.
4. The method of claim 3 , wherein the liner and the bottom electrode comprise different materials.
5. The method of claim 3 , wherein the liner comprises titanium (Ti).
6. The method of claim 3 , further comprising:
forming a top electrode layer on the MTJ stack; and
removing the top electrode layer, the MTJ stack, the bottom electrode layer, and the liner to form a top electrode and the MTJ on the bottom electrode.
7. The method of claim 1 , wherein the bottom electrode protrudes a top surface of the first IMD layer.
8. The method of claim 1 , wherein the bottom electrode comprises titanium nitride (TiN).
9. The method of claim 1 , further comprising planarizing the bottom electrode layer before forming the MTJ stack.