Nanostructures for process monitoring and feedback control
Various techniques are provided to utilize nanostructures for process monitoring and feedback control. In one example, a method includes forming a layer of material including nanostructures distributed therein. Each nanostructure includes a quantum dot and a shell encompassing the quantum dot. The shells and quantum dots are configured to emit a first and second wavelength, respectively, in response to an excitation signal. The method further includes applying the excitation signal to at least a portion of the layer of material. The method further includes detecting an emitted signal from the portion of the layer of material, where the emitted signal is provided by at least a subset of the nanostructures in response to the excitation signal. The method further includes determining whether a manufacturing characteristic has been satisfied based at least on a wavelength of the emitted signal. Related systems and products are also provided.
1. A kit comprising:
a material comprising a plurality of nanostructures distributed therein, wherein each nanostructure comprises a quantum dot and a shell encompassing the quantum dot, wherein the shells are configured to emit a first wavelength in response to an excitation signal, and wherein the quantum dots are configured to emit a second wavelength in response to the excitation signal; and
a system comprising:
a manufacturing device configured to form a layer of material from the material and perform a manufacturing operation on the layer of material prior to application of the excitation signal;
an excitation device configured to apply the excitation signal to at least a portion of the layer of material;
a detection device configured to detect an emitted signal having a first intensity at the first wavelength and a second intensity at the second wavelength from at least a subset of the plurality of nanostructures in response to the excitation signal; and
a computing device configured to determine whether a manufacturing characteristic has been satisfied for the layer based at least on the first intensity at the first wavelength and the second intensity at the second wavelength, wherein the computing device determines that the manufacturing characteristic has not yet been satisfied if the second intensity is below a threshold;
wherein the first wavelength is based on a first band gap associated with the shells of the nanostructures in the portion; and
wherein the second wavelength is based on a second band gap associated with the quantum dots of the nanostructures in the portion.
2. The kit of claim 1 , wherein the computing device is configured to determine whether the manufacturing characteristic has been satisfied based at least on whether the first intensity is below a first threshold and whether the second intensity is above a second threshold.
3. The kit of claim 1 , wherein the manufacturing operation comprises heating the layer of material, wherein the manufacturing characteristic comprises a temperature between a melting point associated with the shells and a melting point associated with the quantum dots, and wherein the computing device is configured to determine whether the manufacturing characteristic has been satisfied by determining whether the temperature has been reached for the layer based at least on the first intensity at the first wavelength and the second intensity at the second wavelength.
4. The kit of claim 1 , wherein the shells comprise at least one semiconductor material doped with at least one metal material.
5. The kit of claim 1 , wherein the layer of material is part of an object formed based on an additive manufacturing process, and wherein the computing device is further configured to interrupt the additive manufacturing process if the manufacturing characteristic is determined to not have been satisfied.
6. The kit of claim 1 , wherein:
the computing device is configured to determine whether the manufacturing characteristic has been satisfied for the layer based at least on the second intensity increasing as the manufacturing characteristic approaches being satisfied; and
the computing device is configured to determine that the manufacturing characteristic has not been satisfied when no emitted signal is detected by the detection device.
7. The kit of claim 1 , wherein:
the computing device is configured to determine whether the manufacturing characteristic has been satisfied for the layer based at least on the first intensity decreasing and the second intensity increasing as the manufacturing characteristic approaches being satisfied;
the computing device is implemented as a programmable device which is one or more microprocessors, one or more microcontrollers, one or more application specific integrated circuits (ASICs), and/or one or more programmable logic devices (PLDs) and/or one or more field programmable systems on a chip (FPSCs); and
the manufacturing operation causes at least one shell of the nanostructures in the portion to be removed, and wherein removal of the at least one shell causes the emitted signal to comprise the second wavelength.
8. The kit of claim 1 , wherein the manufacturing operation comprises heating the layer of material to cause at least one shell of the nanostructures in the portion to be removed, wherein the manufacturing characteristic comprises a temperature, and wherein the at least one shell of the nanostructures is removed when the heating the layer of material causes the layer of material to reach the temperature.
9. The kit of claim 8 , wherein the layer of material is part of an object formed based on an additive manufacturing process, wherein the computing device is configured to:
determine whether the manufacturing characteristic has been satisfied for the layer by determining whether the temperature has been reached for the layer based at least on the first intensity at the first wavelength and the second intensity at the second wavelength; and
interrupt the additive manufacturing process if the temperature is determined to not have been reached.
10. The kit of claim 1 , wherein the manufacturing characteristic comprises pressure applied to the layer of material, and wherein the at least one shell is removed when the pressure has been reached for the layer of material.
11. The kit of claim 10 , wherein the layer of material is part of an object formed based on an additive manufacturing process, wherein the computing device is configured to:
determine whether the manufacturing characteristic has been satisfied for the layer by determining whether the pressure has been reached for the layer based at least on the first intensity at the first wavelength and the second intensity at the second wavelength; and
interrupt the additive manufacturing process if the pressure is determined to not have been reached.
12. The kit of claim 1 , wherein the manufacturing operation comprises a curing operation in which the layer of material is maintained at a specified temperature and a specified pressure to cause at least one shell of the nanostructures in the portion to be removed, and wherein the at least one shell is removed after the layer of material is maintained at the specified temperature and the specified pressure for at least a minimum amount of time.
13. The kit system of claim 1 , wherein:
the layer of material comprises a first layer;
the manufacturing device is further configured to form a second layer of material over the first layer after determining the manufacturing characteristic has been satisfied for the first layer, wherein the second layer comprises a second plurality of nanostructures distributed therein;
the excitation device is further configured to apply the excitation signal to at least a portion of the second layer of material;
the detection device is further configured to detect a second emitted signal from at least a subset of the second plurality of nanostructures in response to the excitation signal; and
the computing device is further configured to determine whether the manufacturing characteristic has been satisfied for the second layer based at least on the second emitted signal.
14. The kit of claim 13 , wherein the manufacturing device is further configured to:
perform a manufacturing operation on the second layer; and
form a third layer of material while the manufacturing device is performing the manufacturing operation on the second layer.
15. The kit of claim 1 , wherein the manufacturing device comprises a printing nozzle configured to:
hold the material comprising the plurality of nanostructures distributed therein; and
deposit the material to form the layer of material.
16. The system of claim 15 , wherein the manufacturing device further comprises a deposition surface, wherein the printing nozzle is configured to deposit the material on the deposition surface, and wherein the manufacturing device is configured to heat the layer of material at least by heating the deposition surface.
17. The system of claim 5 , wherein the computing device is further configured to adjust the additive manufacturing process if the manufacturing characteristic is determined to not have been satisfied.
18. The kit of claim 12 , wherein the computing device is configured to determine whether the manufacturing characteristic has been satisfied by determining whether the specified temperature and/or the specified pressure has been reached based at least on the first intensity at the first wavelength and the second intensity at the second wavelength.
19. The kit of claim 1 , wherein the computing device comprises a processor and a memory comprising instructions for execution by the processor to determine whether the manufacturing characteristic has been satisfied for the layer based at least on the first intensity at the first wavelength and the second intensity at the second wavelength.
20. The kit of claim 16 , wherein the deposition surface has a vacuum surface configured to apply a vacuum suction to the material deposited on the deposition surface.