Thin-film deposition method and system
A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.
1. A method of conformally forming a film on a substrate, the method comprising:
loading a substrate within a reaction chamber of a reactor;
providing a first gas comprising a carrier gas within the reaction chamber for a first gas pulse period;
providing a second gas consisting of the carrier gas and a nitrogen-containing reactant within the reaction chamber;
using a first plasma condition, forming first activated species using the second gas to thereby form a layer of deposited material;
forming a treated layer using a second plasma condition to form second activated species using the second gas to treat the deposited material; and
using a third plasma condition, forming activated species using a third gas to thereby form a surface-modified layer,
wherein forming the treated layer consists essentially of forming the second activated species using the second gas,
wherein the first plasma condition and the second plasma condition differ,
wherein the third gas consists of the carrier gas and the nitrogen-containing reactant and a hydrogen-containing reactant,
wherein the first plasma condition is carried out at a first plasma power, wherein the second plasma condition is carried out at a second plasma power, wherein the third plasma condition is carried out at a third plasma power, wherein the second plasma power is greater than the first plasma power, and wherein the third plasma power is greater than the first plasma power and less than the second plasma power.
2. The method according to claim 1 , wherein the third plasma power is between 500 W and 800 W, the second plasma power is between 800 W and 1200 W, and the first plasma power is between 300 W and 600 W.
3. The method according to claim 1 , wherein the second plasma power is between about 600 and about 1,500 W.
4. The method according to claim 1 , wherein the third plasma power is between about 300 and about 1,000 W.
5. The method according to claim 1 , wherein the layer of deposited material comprises silicon nitride and wherein the first gas does not comprise the hydrogen-containing reactant.
6. The method according to claim 1 , wherein a step coverage of the film is greater than 80%.
7. The method according to claim 6 , wherein the first plasma power is between about 100 and about 800 W.
8. The method according to claim 1 , further comprising repeating the steps of:
providing the first gas within the reaction chamber;
using the first plasma condition, forming first activated species using the second gas to thereby form another layer of deposited material;
using the second plasma condition, forming second activated species using the second gas; and
using the third plasma condition, forming activated species using a third gas to thereby form another surface-modified layer.
9. The method according to claim 1 , wherein the first plasma condition exhibits a reduced electric field at an edge of a substrate relative to an electric field formed at the edge using the second plasma condition.
10. The method according to claim 1 , wherein the second plasma condition increases a hardness of the layer of deposited material.
11. The method according to claim 1 , wherein the third plasma condition creates film-forming promotion sites on the treated layer.
12. The method according to claim 1 , wherein the first gas comprises a silicon-containing precursor.
13. The method according to claim 12 , wherein the silicon-containing precursor comprises a silane precursor.
14. The method according to claim 12 , wherein the silicon-containing precursor comprises a halogen.
15. The method according to claim 12 , wherein the silicon-containing precursor comprises an amine.
16. The method according to claim 12 , wherein the silicon-containing precursor comprises at least one of trisilylamine (SiH 3 ) 3 N); disilane (SiH 3 ) 2 ); disilylmethylamine (SiH 3 ) 2 NMe); disilylethylamine (SiH 3 ) 2 NEt); disilylisopropylamine (SiH 3 ) 2 N(iPr); disilyl-tert-butylamine ((SiH 3 ) 2 N (tBu)); diethylsilylamine (SiH 3 NEt 2 ); di-tert-butylsilylamine (SiH 3 N (tBu) 2 ); bis-diethylamino-silane (SiH 2 (NEt 2 ) 2 ); bis-dimethylamino-silane (SiH 2 (NMe 2 ) 2 ); bis-tertiarybutylamino-silane (SiH 2 (NHtBu) 2 ); tetraethylorthosilicate (Si(OEt) 4 ); silicon tetrachloride (SiCl 4 ); hexachlorodisilane (Si 2 Cl 6 ); dichlorosilane (SiH 2 Cl 2 ); tris-dimethylamino-silane (SiH(N(Me) 2 ) 3 ); bis-ethylmethylamino-silane (SiH 2 [N (Et) (Me)] 2 ); hexakis-ethylamino-disilane (Si 2 (NHEt) 6 ); tetrakis-ethylamino-silane (Si(NHEt) 4 ); trisilane (Si 3 H 8 ); or any combination thereof, wherein Me represents a methyl group, Et represents an ethyl group, iPr represents an isopropyl group, and tBu represents a tert-butyl group.
17. A method of conformally forming a film on a substrate, the method comprising:
loading a substrate within a reaction chamber of a reactor;
providing a first gas comprising a carrier gas within the reaction chamber for a first gas pulse period;
providing a second gas consisting of the carrier gas and a nitrogen-containing reactant within the reaction chamber;
using a first plasma condition, forming first activated species using the second gas to thereby form a layer of deposited material;
forming a treated layer using a second plasma condition to form second activated species using the second gas to treat the deposited material; and
using a third plasma condition, forming activated species using a third gas to thereby form a surface-modified layer,
wherein forming the treated layer consists essentially of forming the second activated species using the second gas,
wherein the first plasma condition and the second plasma condition differ,
wherein the third gas consists of the carrier gas and the nitrogen-containing reactant and a hydrogen-containing reactant, and
wherein the second plasma condition decreases a wet etch rate nonuniformity of the layer of deposited material.
18. A method of conformally forming a film on a substrate, the method comprising:
loading a substrate within a reaction chamber of a reactor;
providing a first gas comprising a carrier gas within the reaction chamber for a first gas pulse period;
providing a second gas consisting of the carrier gas and a nitrogen-containing reactant within the reaction chamber;
using a first plasma condition, forming first activated species using the second gas to thereby form a layer of deposited material;
forming a treated layer using a second plasma condition to form second activated species using the second gas to treat the deposited material; and
using a third plasma condition, forming activated species using a third gas to thereby form a surface-modified layer,
wherein forming the treated layer consists essentially of forming the second activated species using the second gas,
wherein the first gas comprises a silicon-containing precursor, and
wherein the nitrogen-containing reactant comprises one or more of N 2 O and NO 2 , alone or in any combination.
19. A method of conformally forming a film on a substrate, the method comprising:
loading a substrate within a reaction chamber of a reactor;
providing a first gas comprising a carrier gas within the reaction chamber for a first gas pulse period;
providing a second gas consisting of the carrier gas and a nitrogen-containing reactant within the reaction chamber;
using a first plasma condition, forming first activated species using the second gas to thereby form a layer of deposited material;
forming a treated layer using a second plasma condition to form second activated species using the second gas to treat the deposited material; and
using a third plasma condition, forming activated species using a third gas to thereby form a surface-modified layer,
wherein forming the treated layer consists essentially of forming the second activated species using the second gas,
wherein the first plasma condition and the second plasma condition differ,
wherein the third gas consists of the carrier gas and the nitrogen-containing reactant and a hydrogen-containing reactant, and
wherein the second gas is continuously provided during the steps of providing the first gas, providing the second gas, and using the third gas.
20. A method of conformally forming a film on a substrate, the method comprising:
loading a substrate within a reaction chamber of a reactor;
providing a first gas comprising a carrier gas within the reaction chamber for a first gas pulse period;
providing a second gas consisting of the carrier gas and a nitrogen-containing reactant within the reaction chamber;
using a first plasma condition, forming first activated species using the second gas to thereby form a layer of deposited material;
forming a treated layer using a second plasma condition to form second activated species using the second gas to treat the deposited material; and
using a third plasma condition, forming activated species using a third gas to thereby form a surface-modified layer,
wherein forming the treated layer consists essentially of forming the second activated species using the second gas,
wherein the first plasma condition and the second plasma condition differ,
wherein the third gas consists of the carrier gas and the nitrogen-containing reactant and a hydrogen-containing reactant, and
wherein an electrode spacing during the step of forming first activated species differs from an electrode spacing during the step of forming second activated species.
21. The method according to claim 1 , wherein the substrate is heated to a temperature between 100° C. and 500° C.