Plasma processing system and edge ring replacement method
A plasma processing system includes a control device. The control device executes raising a lifter to deliver a cover ring supporting an edge ring to the lifter; moving a jig supported by a holder to a space between the cover ring and a substrate support surface/an annular support surface; raising a different lifter to deliver the jig to the different lifter; extracting the holder, and then moving the lifter and the different lifter relatively to deliver the edge ring to the jig; lowering only the lifter to deliver the cover ring to the annular member support surface; moving the holder to a space between the cover ring and the jig, and then lowering the different lifter to deliver the jig to the holder; and extracting the holder from the processing chamber to transfer the jig supporting the edge ring from the processing chamber.
1. A plasma processing system, comprising:
a control device; and
a plasma processing device including:
a processing chamber,
a substrate support provided in the processing chamber, the substrate support including an electrostatic chuck having a central portion supporting a substrate on an upper surface thereof, a first ring positioned outside the central portion so as to surround the central portion, a second ring surrounding the first ring, and a supporter positioned below the second ring and supporting the second ring, and
a lifter for raising and lowering the first ring and the second ring, the lifter provided inside an outermost periphery of the supporter and below the second ring, wherein
a portion of the second ring is positioned below the first ring,
the control device controls the lifter to raise the second ring so that the first ring is supported and raised by the second ring,
a protrusion is provided on one of a lower surface of the first ring and an upper surface of the second ring,
a recess, into which the protrusion is fitted, is provided on an other of the lower surface of the first ring and the upper surface of the second ring, and
the lifter is positioned radially inward of the protrusion and the recess.
2. The plasma processing system of claim 1 , wherein a diameter of an innermost peripheral portion of the second ring is smaller than a diameter of an outermost peripheral portion of the first ring.
3. The plasma processing system of claim 1 , wherein an inner peripheral portion of the second ring at least partially overlaps an outer peripheral portion of the first ring in a plan view.
4. The plasma processing system of claim 1 , wherein the second ring covers an outer side surface of the first ring.
5. The plasma processing system of claim 1 , wherein the protrusion and the recess are formed along a circumferential direction of the first ring and the second ring.
6. The plasma processing system of claim 1 , wherein the first ring is an edge ring.
7. The plasma processing system of claim 6 , wherein the second ring is a cover ring that covers an outer surface of the edge ring.
8. The plasma processing system of claim 1 , wherein the first ring includes Si or SiC.
9. The plasma processing system of claim 1 , wherein another recess is formed on a lower surface of the second ring to engage with an upper end portion of the lifter.
10. The plasma processing system of claim 1 , further comprising:
a transfer device having a holder, wherein
the control device controls the transfer device to move the holder between the second ring supporting the first ring and the substrate support, and
the control device controls the lifter to lower the lifter to deliver the second ring supporting the first ring from the lifter to the holder.
11. The plasma processing system of claim 1 , wherein the plasma processing device further includes another lifter which moves up and down so as to protrude from the upper surface of the central portion of the electrostatic chuck.
12. The plasma processing system of claim 11 , further comprising:
a transfer device having a holder which supports a jig, the jig having a portion longer than an inner diameter of the first ring.
13. The plasma processing system of claim 12 , wherein the control device is configured to:
control the transfer device to move the jig supported by the holder between the second ring supporting the first ring and the substrate support,
control the another lifter to raise to deliver the jig from the holder to the another lifter,
control the lifter and the another lifter, after extracting the holder, to move relatively with each other to deliver the first ring from the second ring to the jig,
control the lifter to lower to deliver the second ring from the lifter to the supporter,
controls the transfer device to move the holder between the second ring and the jig supporting the first ring, and then control the another lifter to lower to deliver the jig supporting the first ring from the another lifter to the holder, and
control the transfer device to extract the holder from the processing chamber to deliver the jig supporting the first ring from the processing chamber.
14. The plasma processing system of claim 12 , wherein the control device is further configured to:
control the transfer device to move the jig, which supports the first ring and is supported by the holder, above the substrate support,
control the another lifter to raise to deliver the jig supporting the first ring from the holder to the another jig,
control the lifter, after extracting the holder, to raise while supporting only the second ring to deliver the first ring from the jig to the second ring,
control the transfer device to move the holder between the substrate support and the jig, and then control the another lifter to lower to deliver the jig from the another lifter to the holder,
control the transfer device to extract the holder from the processing chamber to deliver the jig from the processing chamber, and
control the lifter to lower the lifter to deliver the second ring.
15. A substrate support, comprising:
an electrostatic chuck having a central portion supporting a substrate on an upper surface thereof;
a first ring positioned outside the central portion so as to surround the central portion;
a second ring surrounding the first ring, a portion the second ring being positioned below the first ring;
a supporter positioned below the second ring and supporting the second ring; and
a lifter for raising and lowering the first ring and the second ring, the lifter being provided inside an outermost periphery of the supporter and below the second ring, wherein
the lifter protrudes from the supporter,
the lifter raises the second ring so that the first ring is supported and raised by the first second ring when raised,
a protrusion is provided on one of a lower surface of the first ring and an upper surface of the second ring,
a recess, into which the protrusion is fitted, is provided on an other of the lower surface of the first ring and the upper surface of the second ring, and
the lifter is positioned radially inward of the protrusion and the recess.
16. The substrate support of claim 15 , wherein a diameter of an innermost peripheral portion of the second ring is smaller than a diameter of an outermost peripheral portion of the first ring.
17. The substrate support of claim 15 , wherein an inner peripheral portion of the second ring at least partially overlaps an outer peripheral portion of the first ring in a plan view.
18. The substrate support of claim 15 , wherein the second ring covers an outer side surface of the first ring.
19. The substrate support of claim 15 , wherein the protrusion and the recess are formed along a circumferential direction of the first ring and the second ring.
20. The substrate support of claim 15 , wherein the first ring is an edge ring.
21. The substrate support of claim 20 , wherein the second ring is a cover ring that covers an outer surface of the edge ring.
22. The substrate support of claim 15 , wherein the first ring includes Si or SiC.
23. The substrate support of claim 15 , wherein a recess is formed on a lower surface of the second ring to engage with an upper end portion of the lifter.
24. The substrate support of claim 15 , further comprising another lifter which moves up and down so as to protrude from the upper surface of the central portion of the electrostatic chuck.