IP Library › Granted Patent US 12,394,738
Granted Patent B2
US 12,394,738 · App. 17/163,401 · Granted Aug 19, 2025

Semiconductor package

Inventor: Young Lyong Kim (Anyang-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L24/13H01L23/16H01L23/3128H01L24/29H01L24/32H01L24/73H01L24/97H01L2224/0401H01L2224/32225H01L2224/73204H01L2924/3511
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,394,738
App. No.
17/163,401
Granted
Aug 19, 2025
Kind
B2
Abstract

Disclosed is a semiconductor package comprising a package substrate, a substrate on the package substrate, a first semiconductor chip mounted on the substrate, and a stiffener structure on the package substrate and having a hole. The stiffener structure is laterally spaced apart from the substrate. The hole penetrates a top surface of the stiffener structure and a bottom surface of the stiffener structure. When viewed in plan, the hole overlaps a corner region of the package substrate.

Claims (62)

1. A semiconductor package, comprising:

a package substrate;

a chip substrate on the package substrate;

a first semiconductor chip mounted on the chip substrate;

a stiffener structure on the package substrate, the stiffener structure having a hole; and

an adhesive layer between the package substrate and the stiffener structure, an uppermost surface of the adhesive layer being equal to or lower than a top surface of the stiffener structure,

wherein the adhesive layer comprises a base layer and a plurality of oxide fillers in the base layer,

wherein the stiffener structure is laterally spaced apart from the chip substrate,

wherein the package substrate comprises a plurality of first edge regions, each first edge region comprising a corner connecting two adjacent side surfaces of the package substrate, and a plurality of second edge regions, each second edge region positioned between a pair of the first edge regions and extending adjacent to the side surface of the package substrate,

wherein the hole penetrates the top surface of the stiffener structure and a bottom surface of the stiffener structure, the bottom surface being nearer to the package substrate than the top surface,

wherein, when viewed in plan, the hole overlaps one of the plurality of first edge regions, and the hole is positioned on a line that extends between the corner of the package substrate and a corner of the chip substrate adjacent to the corner of the package substrate.

2. The semiconductor package of claim 1 , wherein the adhesive layer extends into the hole of the stiffener structure and covers at least a portion of a sidewall of the hole.

3. The semiconductor package of claim 2 , wherein the adhesive layer has a stiffness less than a stiffness of the stiffener structure.

4. The semiconductor package of claim 3 , wherein a Young's modulus of the adhesive layer is about 1/3000 to about 1/100 of a Young's modulus of the stiffener structure.

5. The semiconductor package of claim 4 ,

wherein the Young's modulus of the adhesive layer ranges from about 0.01 GPa to about 1 GPa, and

wherein the Young's modulus of the stiffener structure ranges from about 100 GPa to about 300 GPa.

6. The semiconductor package of claim 1 , further comprising:

a plurality of second semiconductor chips stacked on the chip substrate,

wherein the first semiconductor chip is of a different type of chip than the plurality of second semiconductor chips.

7. The semiconductor package of claim 1 , wherein the base layer includes a silicone-based polymer or a silicone-based rubber.

8. The semiconductor package of claim 7 , wherein the oxide fillers include a material different from a material of the base layer.

9. The semiconductor package of claim 1 , further comprising:

a plurality of interposer bumps interposed between and electrically connected to the package substrate and the chip substrate; and

an under-fill layer in a gap between the package substrate and the chip substrate, the under-fill layer encapsulating the interposer bumps,

wherein the adhesive layer is spaced apart from the under-fill layer and includes a material different from a material of the under-fill layer.

10. The semiconductor package of claim 1 ,

wherein the package substrate has a central region and an edge region that surrounds the central region, when viewed in plan,

wherein the edge region comprises the plurality of first edge regions and the plurality of second edge regions,

wherein the chip substrate is on the central region of the package substrate, and

wherein the stiffener structure is on the edge region of the package substrate.

11. The semiconductor package of claim 1 , wherein a width of the hole is about 50% to about 95% of a width of the stiffener structure.

12. The semiconductor package of claim 1 , wherein the oxide fillers comprise silicon oxide (SiOx) or aluminum oxide (AlOx), where x is a positive real number.

13. The semiconductor package of claim 1 , comprising a heat radiation plate disposed on a top surface of the first semiconductor chip, wherein the stiffener structure is laterally spaced apart from the heat radiation plate.

14. A semiconductor package, comprising:

a package substrate having a first region and a second region that surrounds the first region, when viewed in plan;

a first semiconductor chip on the first region of the package substrate;

an interposer substrate between the package substrate and the first semiconductor chip;

a stiffener structure on the second region of the package substrate, the stiffener structure having a hole; and

an adhesive layer between the package substrate and the stiffener structure,

wherein the second region of the package substrate comprises a plurality of first edge regions, each first edge region comprising a corner connecting two adjacent side surfaces of the package substrate, and a plurality of second edge regions, each second edge region positioned between a pair of the first edge regions and extending adjacent to the side surface of the package substrate,

wherein the hole penetrates a top surface of the stiffener structure and a bottom surface of the stiffener structure,

wherein the adhesive layer extends into the hole of the stiffener structure,

wherein, when viewed in plan, the hole overlaps one of the plurality of first edge regions, and the hole is positioned on a line that extends between the corner of the package substrate and a corner of the interposer substrate adjacent to the corner of the package substrate,

wherein the adhesive layer comprises a base layer and a plurality of oxide fillers in the base layer, and

wherein an uppermost surface of the adhesive layer with respect to the package substrate is equal to or lower than an uppermost surface of the stiffener structure with respect to the package substrate.

15. The semiconductor package of claim 14 , wherein a Young's modulus of the adhesive layer is less than a young's modulus of the stiffener structure.

16. The semiconductor package of claim 14 , wherein a width of the hole is about 50% to about 95% of a width of the stiffener structure.

17. The semiconductor package of claim 14 , further comprising:

a second semiconductor chip mounted on the interposer substrate and laterally spaced apart from the first semiconductor chip.

18. A semiconductor package, comprising:

a package substrate having a first region and a second region that surrounds the first region, when viewed in plan;

a first semiconductor chip on the first region of the package substrate;

an interposer substrate between the package substrate and the first semiconductor chip;

a stiffener structure on the second region of the package substrate, the stiffener structure having a hole; and

an adhesive layer between the package substrate and the stiffener structure, an uppermost surface of the adhesive layer being equal to or lower than a top surface of the stiffener structure,

wherein the second region of the package substrate comprises a plurality of first edge regions, each first edge region comprising a corner connecting two adjacent side surfaces of the package substrate, and a plurality of second edge regions, each second edge region positioned between a pair of the first edge regions and extending adjacent to the side surface of the package substrate,

wherein the hole penetrates the top surface of the stiffener structure and a bottom surface of the stiffener structure, the bottom surface being nearer to the package substrate than the top surface,

wherein, when viewed in plan, the hole overlaps one of the plurality of first edge regions, and the hole is positioned on a line that extends between the corner of the package substrate and a corner of the interposer substrate adjacent to the corner of the package substrate,

wherein the adhesive layer comprises a base layer and a plurality of oxide fillers in the base layer, and

wherein the adhesive layer extends into the hole of the stiffener structure.

19. The semiconductor package of claim 18 , wherein a width of the hole is about 50% to about 95% of a width of the stiffener structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 21, 2021
From: KIM, YOUNG LYONG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 055346/0791 →
Priority Claims (1)
KR 10-2020-0086265 · Jul 13, 2020 · national
Continuity (1)
Related Publication 20220013487A1 · Jan 13, 2022
References Cited (34)
US 7045390B2 · Milla et al. · 2006 [cited by applicant]
US 7211889B2 · Shim · 2007 [cited by applicant]
US 7224057B2 · Yang · 2007 [cited by applicant]
US 7585702B1 · Wang et al. · 2009 [cited by applicant]
US 7741160B1 · Wang et al. · 2010 [cited by applicant]
US 8115303B2 · Bezama et al. · 2012 [cited by applicant]
US 8212353B1 · Wang et al. · 2012 [cited by applicant]
US 8772927B2 · Bezama et al. · 2014 [cited by applicant]
US 8976529B2 · Lin et al. · 2015 [cited by applicant]
US 10153222B2 · Yu et al. · 2018 [cited by applicant]
US 10475750B2 · Nair et al. · 2019 [cited by applicant]
US 10522477B2 · Chen · 2019 [cited by applicant]
US 10600706B2 · Lee · 2020 [cited by applicant]
US 20030030140A1 · Shim · 2003 [cited by examiner]
US 20070075394A1 · Gogoi · 2007 [cited by applicant]
US 20070075445A1 · Gogoi · 2007 [cited by applicant]
US 20090126981A1 · Horiuchi · 2009 [cited by examiner]
US 20100208442A1 · Asano · 2010 [cited by examiner]
US 20160095209A1 · Starkston · 2016 [cited by examiner]
US 20180233459A1 · Fushimi · 2018 [cited by applicant]
US 20180261554A1 · Huang · 2018 [cited by examiner]
US 20190006333A1 · Ong · 2019 [cited by examiner]
US 20190115269A1 · Pan et al. · 2019 [cited by applicant]
US 20200105642A1 · Gandhi et al. · 2020 [cited by applicant]
US 20210151388A1 · Choi · 2021 [cited by examiner]
US 20210366889A1 · Lin · 2021 [cited by examiner]
EP 3462487A1 · 2019 [cited by examiner]
JP 2000323624 · 2000 [cited by applicant]
JP 2019169559 · 2019 [cited by applicant]
KR 1020030013737 · 2003 [cited by applicant]
KR 1020180054440 · 2018 [cited by applicant]
TW 200715404 · 2007 [cited by applicant]
TW 200717774 · 2007 [cited by applicant]
Office Action in Korean Appln. No. 10-2020-0086265, mailed on Nov. 1, 2024, 20 pages (with English translation). [cited by applicant]