Semiconductor structure and method for forming the same
A semiconductor structure including a substrate, a first dielectric layer disposed on the substrate, a second dielectric layer disposed on the first dielectric layer and in physical contact with the first dielectric layer, an opening on the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer, an conductive layer disposed on the second dielectric layer at two sides of the opening and in physical contact with the second dielectric layer, a contact structure disposed in the lower portion of the opening, and a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.
1. A semiconductor structure, comprising:
a substrate;
a first dielectric layer disposed on the substrate;
a second dielectric layer disposed on the first dielectric layer, wherein a bottommost surface of the second dielectric layer is in physical contact with a topmost surface of the first dielectric layer;
an opening on a peripheral region of the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer;
an conductive layer disposed on the second dielectric layer at two sides of the opening, wherein a bottommost surface of the conductive layer is in physical contact with a topmost surface of the second dielectric layer;
a contact structure disposed in the lower portion of the opening; and
a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.
2. The semiconductor structure according to claim 1 , wherein a width of the upper portion of the opening is larger than a width of the lower portion of the opening.
3. The semiconductor structure according to claim 1 , wherein a portion of the top surface of the contact structure is exposed from the passivation layer.
4. The semiconductor structure according to claim 1 , wherein an air gap in the contact structure is exposed from the passivation layer.
5. The semiconductor structure according to claim 1 , wherein the sidewall of the second dielectric layer and the sidewall of the conductive layer are aligned.
6. The semiconductor structure according to claim 1 , wherein a portion of the first dielectric layer is exposed between the top surface of the contact structure and the sidewall of the second dielectric layer and covered by the passivation layer.
7. The semiconductor structure according to claim 6 , wherein a surface of the portion of the first dielectric layer has a concave profile.
8. The semiconductor structure according to claim 1 , further comprising a third dielectric layer disposed on the conductive layer and the passivation layer and filling the upper portion of the opening.
9. The semiconductor structure according to claim 1 , further comprising:
a plurality of bit lines disposed on a memory region of the substrate; and
a plurality of storage node contacts disposed on the substrate and between the bit lines, wherein a topmost surface of the conductive layer is flush with top surfaces of the storage node contacts.
10. A semiconductor structure, comprising:
a substrate;
a contact structure disposed on the substrate;
a first dielectric layer disposed on the substrate at two sides of the contact structure;
a second dielectric layer disposed on the first dielectric layer at two sides of the contact structure;
an conductive layer disposed on the second dielectric layer at two sides of the contact structure, wherein a bottommost surface of the conductive layer is higher than a topmost surface of the contact structure; and
a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.
11. The semiconductor structure according to claim 10 , wherein a width of the upper portion of the opening is larger than a width of the lower portion of the opening.
12. The semiconductor structure according to claim 10 , wherein a portion of the top surface of the contact structure is exposed from the passivation layer.
13. The semiconductor structure according to claim 10 , wherein an air gap in the contact structure is exposed from the passivation layer.
14. The semiconductor structure according to claim 10 , wherein the sidewall of the second dielectric layer and the sidewall of the conductive layer are aligned.
15. The semiconductor structure according to claim 10 , wherein a portion of the first dielectric layer is exposed between the top surface of the contact structure and the sidewall of the second dielectric layer and covered by the passivation layer.
16. The semiconductor structure according to claim 15 , wherein a surface of the portion of the first dielectric layer has a concave profile.
17. The semiconductor structure according to claim 10 , further comprising a third dielectric layer disposed on the conductive layer and the passivation layer and filling the upper portion of the opening.
18. The semiconductor structure according to claim 10 , further comprising:
a plurality of bit lines disposed on a memory region of the substrate; and
a plurality of storage node contacts disposed on the substrate and between the bit lines, wherein a topmost surface of the conductive layer is flush with top surfaces of the storage node contacts.
19. A semiconductor structure, comprising:
a substrate;
a first dielectric layer disposed on the substrate;
a second dielectric layer disposed on the first dielectric layer;
an opening on a peripheral region of the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer;
an conductive layer disposed on the second dielectric layer at two sides of the opening;
a contact structure disposed in the lower portion of the opening; and
a passivation layer in physical contact with a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer.
20. The semiconductor structure according to claim 19 , wherein a portion of the first dielectric layer is exposed between the top surface of the contact structure and the sidewall of the second dielectric layer and in physical contact with the passivation layer.