Semiconductor element memory device
View Patent ↗A data retention operation of holding positive hole groups generated by an impact ionization phenomenon or by a gate-induced drain leakage current in a semiconductor base body is performed by controlling voltages applied to plate lines, word lines, a source line, odd-numbered bit lines, and even-numbered bit lines; and a data erase operation is performed by removing positive hole groups from inside the semiconductor base body by controlling the voltages applied to plate lines, word lines, source line, odd-numbered bit lines, and even-numbered bit lines and lowering a voltage of The semiconductor base body by means of capacitive coupling between the plate lines and word lines. A block is made up of memory cells arrayed in a matrix, and storage data is read from the memory cells in the block alternately to the odd-numbered bit lines and even-numbered bit line.
1. A semiconductor element memory device comprising a block in which a plurality of semiconductor memory cells is arrayed in a matrix on a substrate, each of the semiconductor memory cells contained in the block in turn including:
a semiconductor base body erected on a substrate in a vertical direction of the substrate or extended on the substrate in a horizontal direction,
a first impurity region and a second impurity region provided on opposite ends of the semiconductor base body;
a gate insulating layer placed in contact with a lateral surface of the semiconductor base body between the first impurity region and the second impurity region;
a first gate conductor layer covering part or all of the gate insulating layer; and
a second gate conductor layer located adjacent to the first gate conductor layer and placed in contact with a lateral surface of the gate insulating layer,
wherein positive hole groups generated by an impact ionization phenomenon or by a gate-induced drain leakage current are held in the semiconductor base body by controlling voltages applied to the first gate conductor layer, the second gate conductor layer, the first impurity region, and the second impurity region,
a memory write operation is performed by setting a voltage of the semiconductor base body to a first data retention voltage higher than a voltage of the first impurity region and/or the second impurity region by about a built-in voltage,
a memory erase operation is performed by controlling voltages applied to the first impurity region, the second impurity region, the first gate conductor layer, and the second gate conductor layer and thereby extracting the positive hole groups from one or both of the first impurity region and the second impurity region,
the voltage of the semiconductor base body is set to a second data retention voltage lower than the first data retention voltage,
in the block, the first impurity region of each of the semiconductor memory cells is connected with a source line and the second impurity region is connected alternately with an odd-numbered bit line and an even-numbered bit line and one of the first and second gate conductor layers is connected with a word line and another is connected with a first drive control line, and
in the block, using voltages applied to the source line, the bit lines, the first drive control line, and the word line, storage data of a plurality of the semiconductor base bodies selected by the word line is read alternately to the odd-numbered bit line and the even-numbered bit line.
2. The semiconductor element memory device according to claim 1 , wherein the storage data of the semiconductor base body is read alternately to the odd-numbered bit line and the even-numbered bit line and sense amplifier circuits alternately determine whether the storage data is write data or erase data.
3. The semiconductor element memory device according to claim 2 , wherein the odd-numbered bit line and the even-numbered bit line share one sense amplifier.
4. The semiconductor element memory device according to claim 2 , wherein the odd-numbered bit line is inputted to an odd-numbered sense amplifier circuit and the even-numbered bit line is inputted to an even-numbered sense amplifier circuit.
5. The semiconductor element memory device according to claim 1 , wherein an operation of reading the storage data of the semiconductor base body through one of the odd-numbered bit line and the even-numbered bit line with another of the bit lines fixed to a first voltage and an operation of reading the storage data through the other of the bit lines with the one of the bit lines fixed to the first voltage are performed alternately.
6. The semiconductor element memory device according to claim 5 , wherein the first voltage is ground voltage.
7. The semiconductor element memory device according to claim 1 , wherein the memory write operation is performed by selecting the odd-numbered bit line and the even-numbered bit line simultaneously.
8. The semiconductor element memory device according to claim 1 , wherein the memory write operation is performed by alternately selecting the odd-numbered bit line and the even-numbered bit line.
9. The semiconductor element memory device according to claim 1 , wherein the memory write operation is performed by alternating an operation of selecting one of the odd-numbered bit line and the even-numbered bit line with another of the bit lines fixed to a second voltage and an operation of selecting the other of the bit lines with the one of the bit lines fixed to the second voltage.
10. The semiconductor element memory device according to claim 1 , wherein first gate capacitance between the first gate conductor layer and the semiconductor base body is higher than second gate capacitance between the second gate conductor layer and the semiconductor base body.
11. The semiconductor element memory device according to claim 1 , wherein one or both of the first gate conductor layer and the second gate conductor layer are divided into two or more separate gate conductor layers in planar view or in a vertical direction and the separate Gate conductor layers are operated synchronously or asynchronously.
12. The semiconductor element memory device according to claim 11 , wherein in the vertical direction, either the separate gate conductor layers of the first gate conductor layer are placed on opposite sides of the second gate conductor layer, or the separate gate conductor layers of the second gate conductor layer are placed on opposite sides of the first gate conductor layer.