Three-dimensional memory devices having a cylindrical body and plate line contact segments
Embodiments of three-dimensional memory devices are disclosed. A disclosed memory structure can comprises a memory cell, a bit line contact coupled to the memory cell, a bit line coupled to the bit line contact, a source line contact coupled to the memory cell, and a source line coupled to the source line contact. The memory cell comprises a cylindrical body having a cylindrical shape, an insulating layer surrounding the cylindrical body, a word line contact surrounding a first portion of the insulating layer, the word line contact coupled to a word line, and a plurality of plate line contact segments surrounding a second portion of the insulating layer, the plurality of plate line contact segments coupled to a common plate line.
1. A memory structure, comprising:
a memory cell comprising:
a cylindrical body having a cylindrical shape;
an insulating layer surrounding the cylindrical body;
a word line contact surrounding a first portion of the insulating layer, the word line contact coupled to a word line; and
a plurality of plate line contact segments surrounding a second portion of the insulating layer, the plurality of plate line contact segments coupled to a common plate line;
a bit line contact coupled to the memory cell, the bit line contact coupled to a bit line; and
a source line contact coupled to the memory cell, the source line contact coupled to a source line.
2. The memory structure of claim 1 , wherein:
the cylindrical body extends in a first direction;
the word line contact and the plurality of plate line contact segments each surrounds the cylindrical body in a corresponding plane perpendicular to the first direction; and
the word line contact and the plurality of plate line contact segments are arranged in a sequence along the first direction.
3. The memory structure of claim 1 , wherein each of the plurality of plate line contact segments has a substantially same first height along a first direction.
4. The memory structure of claim 3 , wherein the first height is substantially equal to a second height of the word line contact along the first direction.
5. The memory structure of claim 1 , wherein each pair of adjacent plate line contact segments has a substantially same first distance between the pair of adjacent plate line contact segments along a first direction.
6. The memory structure of claim 5 , wherein the first distance is substantially equal to a second distance between the word line contact and an adjacent plate line contact segment.
7. The memory structure of claim 5 , wherein the first distance is different than a second distance between the word line contact and an adjacent plate line contact segment.
8. A memory structure, comprising:
a memory cell comprising:
a cylindrical body having a cylindrical shape;
an insulating layer surrounding the cylindrical body;
a word line contact surrounding a first portion of the insulating layer, the word line contact coupled to a word line; and
a plurality of plate line contact segments surrounding a second portion of the insulating layer, the plurality of plate line contact segments coupled to a plurality of independent plate lines respectively and coupled to a common plate line;
a bit line contact coupled to the memory cell, the bit line contact coupled to a bit line; and
a source line contact coupled to the memory cell, the source line contact coupled to a source line.
9. The memory structure of claim 8 , wherein:
the cylindrical body extends in a first direction;
the word line contact and the plurality of plate line contact segments each surround the cylindrical body in a corresponding plane perpendicular to the first direction; and
the word line contact and the plurality of plate line contact segments are arranged in a sequence along the first direction.
10. The memory structure of claim 8 , wherein each of the plurality of plate line contact segments has a substantially same first height along a first direction.
11. The memory structure of claim 10 , wherein the first height is substantially equal to a second height of the word line contact along the first direction.
12. The memory structure of claim 8 , wherein each pair of adjacent plate line contact segments has a substantially same first distance between the pair of adjacent plate line contact segments along a first direction.
13. The memory structure of claim 12 , wherein the first distance is substantially equal to a second distance between the word line contact and an adjacent plate line contact segment.
14. The memory structure of claim 12 , wherein the first distance is different to a second distance between the word line contact and an adjacent plate line contact segment.
15. A memory structure, comprising:
a bottom conductive layer having a first type dopant;
a memory stack on the bottom conductive layer, the memory stack comprising a plurality of alternatively arranged dielectric layers and conductive layers;
a cylindrical body embedded in the memory stack, the cylindrical body having a second type dopant opposite from the first type dopant; and
a top contact on the cylindrical body, the top contact having the first type dopant, wherein:
the top contact is coupled to a bit line;
a top conductive layer of the memory stack is coupled to a word line;
the plurality of conductive layers other than the top conductive layer of the memory stack are coupled to a plurality of plate lines respectively, and the plurality of plate lines are connected to a common voltage source; and
the bottom conductive layer is coupled to a source line.
16. The memory structure of claim 15 , wherein the plurality of plate lines are connected to a plurality of independent voltage sources.
17. The memory structure of claim 15 , wherein each of the plurality of conductive layers of the memory stack has a substantially same first thickness.
18. The memory structure of claim 17 , wherein each of the plurality of dielectric layers of the memory stack has a substantially same second thickness.
19. The memory structure of claim 18 , wherein a top dielectric layer of the memory stack has a third thickness that is different from the second thickness of other dielectric layers of the memory stack.
20. The memory structure of claim 15 , wherein:
the cylindrical body extends in a first direction;
the word line and the plurality of plate lines each surrounds the cylindrical body in a corresponding plane perpendicular to the first direction; and
the word line and the plurality of plate lines are arranged in a sequence along the first direction.