IP Library Granted Patent US 12,396,281
Granted Patent B2
US 12,396,281 · App. 17/534,706 · Granted Aug 19, 2025

Image sensor with reduced crosstalk between pixels

Inventors: Bokwon Kim (Suwon-si, KR); Changkyu Lee (Hwaseong-si, KR); Kwangmin Lee (Seoul, KR); Minhwan Jeon (Hwaseong-si, KR); Jonguk Kim (Hwaseong-si, KR); Minsung Heo (Hwaseong-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H10F39/807H10F39/199H10F39/8053H10F39/8057
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Quick Facts
Patent No.
US 12,396,281
App. No.
17/534,706
Granted
Aug 19, 2025
Kind
B2
Abstract

An image sensor includes a first pixel; a second pixel disposed adjacent to the first pixel; a pixel isolation structure disposed between the first pixel and the second pixel; a rear side anti-reflective layer disposed on the first pixel, the second pixel, and the pixel isolation structure; and a fence disposed on the rear side anti-reflective layer aligning with the pixel isolation structure and including a buried air gap.

Claims (61)

1. An image sensor comprising:

a two-dimensional array of pixels extending along a first direction and a second direction perpendicular to the first direction, the two-dimensional array comprising:

a first pixel; and

a second pixel disposed adjacent to the first pixel, wherein the first pixel and the second pixel are arranged along the first direction;

a pixel isolation structure disposed between the first pixel and the second pixel;

a first anti-reflective layer disposed on the first pixel, the second pixel, and the pixel isolation structure;

a fence disposed on the first anti-reflective layer and extending in a third direction perpendicular to the two-dimensional array, the fence comprising:

a buried air gap;

a first side surface extending in the third direction;

a second side surface extending in the third direction, the second side surface being spaced apart from the first side surface along the first direction, wherein the fence is vertically aligned with the pixel isolation structure along the third direction; and

a penetration layer penetrating through at least a portion of the first anti-reflective layer, wherein a portion of the buried air gap in the fence extends into the penetration layer;

a second anti-reflective layer disposed on the first anti-reflective layer and the fence, wherein at least a portion of the second anti-reflective layer is disposed on at least one of the first side surface and the second side surface of the fence.

2. The image sensor of claim 1 , wherein the first anti-reflective layer comprises a plurality of sub anti-reflective layers.

3. The image sensor of claim 1 , wherein the fence further comprises a barrier metal layer disposed on the first anti-reflective layer, and the buried air gap and the fence are disposed between portions of the barrier metal layer.

4. The image sensor of claim 1 , wherein the fence comprises a plurality of fence layers and a fence capping layer, wherein a first refractive index of the fence capping layer is higher than a second refractive index of the plurality of fence layers.

5. The image sensor of claim 1 , wherein the buried air gap surrounds perimeters of the first pixel and of the second pixel.

6. The image sensor of claim 1 , wherein the buried air gap partially surrounds perimeters of the first pixel and the second pixel.

7. The image sensor of claim 1 , wherein the buried air gap partially overlaps first portions of perimeters of the first pixel and the second pixel that extend parallel to the second direction, and completely overlaps second portions of the perimeters of the first pixel and the second pixel that extend parallel to the first direction.

8. The image sensor of claim 1 , wherein the buried air gap comprises a plurality of discrete air gap dots disposed around perimeters of the first pixel and the second pixel.

9. The image sensor of claim 1 , wherein a height of the buried air gap along the third direction is greater than a width of the buried air gap along the first direction.

10. The image sensor of claim 1 , wherein the buried air gap has one of a bow-shaped profile or a candle-shaped profile in a vertical plane oriented perpendicular to the two-dimensional array.

11. An image sensor comprising:

a two-dimensional array of pixels extending along a first direction and a second direction perpendicular to the first direction, the two-dimensional array comprising:

a first pixel; and

a second pixel disposed adjacent to the first pixel, wherein the first pixel and the second pixel are arranged along the first direction;

a pixel isolation structure disposed between the first pixel and the second pixel;

a first anti-reflective layer disposed on the first pixel, the second pixel, and the pixel isolation structure and comprising a plurality of sub anti-reflective layers;

a fence disposed on the first anti-reflective layer and extending in a third direction perpendicular to the two-dimensional array, the fence comprising:

a buried air gap;

a first side surface extending along the third direction;

a second side surface extending along the third direction, the second side surface being spaced apart from the first side surface along the first direction, wherein the fence is vertically aligned with the pixel isolation structure along the third direction; and

a penetration layer penetrating through at least one of the sub anti-reflective layers in the third direction, wherein the buried air gap is disposed inside the fence and extends into the penetration layer;

a second anti-reflective layer disposed on the first anti-reflective layer and the fence, wherein at least a portion of the second anti-reflective layer is disposed on at least one of the first side surface and the second side surface of the fence; and

a passivation layer disposed on the second anti-reflective layer.

12. The image sensor of claim 11 , wherein:

the fence further comprises a barrier metal layer disposed on the first anti-reflective layer; and

the penetration layer of the fence is disposed between portions of the barrier metal layer.

13. The image sensor of claim 11 , wherein the fence further comprises:

a first fence layer formed on the first anti-reflective layer;

a fence capping layer formed on the first fence layer; and

a second fence layer formed on the fence capping layer, wherein the penetration layer is connected to the first fence layer and the buried air gap is disposed in the first fence layer.

14. The image sensor of claim 11 , wherein the fence further comprises:

a first fence layer formed on the first anti-reflective layer and being disposed at an inclination relative to the first anti-reflective layer; and

a second fence layer formed on the first fence layer wherein the buried air gap is disposed in the second fence layer.

15. An image sensor comprising:

a substrate having a first surface and a second surface opposite to the first surface;

a two-dimensional array of pixels disposed in the substrate, the two-dimensional array extending along a first direction and a second direction perpendicular to the first direction, the two-dimensional array comprising:

a first pixel disposed in the substrate; and

a second pixel disposed in the substrate and adjacent to the first pixel, wherein the first pixel, the second pixel, and the gap between the first pixel and the second pixel are arranged along the first direction;

a pixel isolation structure disposed between the second surface and the first surface of the substrate and between the first pixel and the second pixel;

a first anti-reflective layer disposed on the first pixel, the second pixel, and the pixel isolation structure and comprising a plurality of sub anti-reflective layers;

a fence disposed on the first anti-reflective layer and extending in a third direction perpendicular to the two-dimensional array, the fence comprising:

a buried air gap;

a first side surface extending in the third direction;

a second side surface extending in the third direction, the second side surface being spaced apart from the first side surface along the first direction, wherein the fence is vertically aligned with the pixel isolation structure along the third direction; and

a penetration layer penetrating through at least one of the sub anti-reflective layers in the third direction, wherein the buried air gap is disposed inside the fence and extends into he penetration layer;

a second anti-reflective layer disposed on the first anti-reflective layer and the fence, wherein at least a portion of the second anti-reflective layer is disposed on at least one of the first side surface and the second side surface of the fence;

a passivation layer disposed on the second anti-reflective layer; and

a plurality of color filters, including a first color filter vertically aligned in the third direction with the first pixel, and a second color filter vertically aligned in the third direction with the second pixel, wherein the fence separates the first color filter from the second color filter.

16. The image sensor of claim 15 , wherein the pixel isolation structure comprises a filled trench disposed between the first surface and the second surface of the substrate.

17. The image sensor of claim 1 , wherein a passivation layer is disposed on the second anti-reflective layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 24, 2021
From: KIM, BOKWON; LEE, CHANGKYU; LEE, KWANGMIN; JEON, MINHWAN; KIM, JONGUK; HEO, MINSUNG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 058204/0657 →
Priority Claims (2)
KR 10-2020-0159220 · Nov 24, 2020 · national
KR 10-2021-0098110 · Jul 26, 2021 · national
Continuity (1)
Related Publication 20220165763A1 · May 26, 2022
References Cited (26)
US 8378440B2 · Kwon et al. · 2013 [cited by applicant]
US 9224770B2 · Lin et al. · 2015 [cited by applicant]
US 9455288B2 · Tsai et al. · 2016 [cited by applicant]
US 10014338B2 · Lee · 2018 [cited by applicant]
US 10741596B2 · Kim et al. · 2020 [cited by applicant]
US 20120261782A1 · Kobayashi et al. · 2012 [cited by applicant]
US 20190157329A1 · Kim · 2019 [cited by examiner]
US 20190229140A1 · Naito et al. · 2019 [cited by applicant]
US 20190267420A1 · Lee · 2019 [cited by applicant]
US 20190386049A1 · Jung · 2019 [cited by examiner]
US 20200083268A1 · Kim et al. · 2020 [cited by applicant]
US 20200219920A1 · Hur et al. · 2020 [cited by applicant]
US 20200395392A1 · Do · 2020 [cited by applicant]
US 20210183928A1 · Hoshi et al. · 2021 [cited by applicant]
US 20210366969A1 · Bak · 2021 [cited by examiner]
JP H10154805A · 1998 [cited by applicant]
JP 2012186364A · 2012 [cited by applicant]
JP 5430387B2 · 2014 [cited by applicant]
JP 2014138071A · 2014 [cited by applicant]
JP 201987659A · 2019 [cited by applicant]
KR 1020110079326A · 2011 [cited by applicant]
KR 1020140029933A · 2014 [cited by applicant]
KR 1020180040308A · 2018 [cited by applicant]
KR 1020190057601A · 2019 [cited by applicant]
KR 1020190142874A · 2019 [cited by applicant]
KR 1020200082333A · 2020 [cited by applicant]