Polishing compositions and methods of use thereof
This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion inhibitor that is at least one azole compound; and optionally a pH adjuster.
1. A polishing composition, comprising:
at least one abrasive;
at least one first corrosion inhibitor selected from the group consisting of aromatic phosphonates, polyoxyethylene alkyl ether phosphonates, polyoxyethylene aryl alkyl ether phosphonates, polyoxyethylene nonylaryl ether phosphonates, and polyoxyethylene nonylphenyl ether phosphonates;
at least one complexing agent;
at least one second corrosion inhibitor, the at least one second corrosion inhibitor comprising at least one azole compound; and
optionally at least one pH adjuster;
wherein the amount of the at least one first corrosion inhibitor in the polishing composition is from about 1 ppm to about 2000 ppm of the composition and is an amount such that the polishing composition dissolves from at least about 3% by weight to at most about 10% by weight Cu 2 O from a solid Cu 2 O powder at a weight ratio of Cu 2 O to polishing composition of about 1:2500 when the solid Cu 2 O powder has an average particle size of from about 0.01 micron to about 500 microns and is immersed in the polishing composition at 25° C. for two minutes under agitation to form a mixture, the mixture is centrifuged to form a supernatant, and the amount of Cu ions dissolved in the supernatant is measured by ICP-MS.
2. The polishing composition of claim 1 , wherein the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products of alumina, silica, titania, ceria, or zirconia, coated abrasives, surface modified abrasives, and mixtures thereof.
3. The polishing composition of claim 1 , wherein the at least one abrasive is in an amount of from about 0.01% to about 50% by weight of the composition.
4. The polishing composition of claim 1 , wherein the amount of the at least one first corrosion inhibitor is from about 2.5 ppm to about 50 ppm of the composition.
5. The polishing composition of claim 1 , wherein the at least one first corrosion inhibitor has a molecular weight from about 150 g/mol to about 1100 g/mol.
6. The polishing composition of claim 1 , wherein the at least one complexing agent is selected from the group consisting of organic acids, amines, ammonia, quaternary ammonium compounds, inorganic acids, and salts and mixtures thereof.
7. The polishing composition of claim 1 , wherein the at least one complexing agent is selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, amino acetic acid, phenoxyacetic acid, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, benzoic acid, ammonia, 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethanesulfonic acid, benzenesulfonic acid, hydroxylamine O-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, p-toluenesulfonic acid, trifluoromethane-sulfonic acid, ethyl phosphoric acid, cyanoethyl phosphoric acid, phenyl phosphoric acid, vinyl phosphoric acid, poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis (methylphosphonic acid), N,N,N′,N′-ethylenediaminetetrakis(methylene phosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid, phenylphosphonic acid, salts thereof, and mixtures thereof.
8. The polishing composition of claim 1 , wherein the at least one complexing agent is in an amount from about 0.01% to about 20% by weight of the composition.
9. The polishing composition of claim 1 , wherein the at least one second corrosion inhibitor is selected from the group consisting of tetrazole, benzotriazole, tolyltriazole, 5-methylbenzotriazole, ethyl benzotriazole, propyl benzotriazole, butyl benzotriazole, pentyl benzotriazole, hexyl benzotriazole, dimethyl benzotriazole, chloro benzotriazole, dichloro benzotriazole, chloromethyl benzotriazole, chloroethyl benzotriazole, phenyl benzotriazole, benzyl benzotriazole, aminotriazole, aminobenzimidazole, pyrazole, imidazole, aminotetrazole, adenine, benzimidazole, thiabendazole, 1,2,3-triazole, 1,2,4-triazole, 1-hydroxybenzotriazole, 2-methylbenzothiazole, 2-aminobenzimidazole, 2-amino-5-ethyl-1,3,4-thiadazole, 3,5-diamino-1,2,4-triazole, 3-amino-5-methylpyrazole, 4-amino-4H-1,2,4-triazole, and combinations thereof.
10. The polishing composition of claim 1 , wherein the at least one second corrosion inhibitor is in an amount from about 0.0001% to about 5% by weight of the composition.
11. A polishing composition, comprising:
at least one abrasive;
at least one first corrosion inhibitor selected from the group consisting of aromatic phosphonates, polyoxyethylene alkyl ether phosphonates, polyoxyethylene aryl alkyl ether phosphonates, polyoxyethylene nonylaryl ether phosphonates, and polyoxyethylene nonylphenyl ether phosphonates;
at least one complexing agent;
at least one second corrosion inhibitor, the at least one second corrosion inhibitor comprising at least one azole compound; and
optionally at least one pH adjuster;
wherein the amount of the at least one first corrosion inhibitor in the polishing composition is from about 1 ppm to about 2000 ppm of the composition and is in an amount such that, when a 4 cm×4 cm copper containing patterned coupon is immersed in 50 g of the polishing composition at 45° C. for 5 minutes to form a mixture, the amount of the Cu species in the mixture is from about 1 ppm to about 10 ppm as measured by ICP-MS.
12. The polishing composition of claim 11 , wherein the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products of alumina, silica, titania, ceria, or zirconia, coated abrasives, surface modified abrasives, and mixtures thereof.
13. The polishing composition of claim 11 , wherein the at least one abrasive is in an amount of from about 0.01% to about 50% by weight of the composition.
14. The polishing composition of claim 11 , wherein the amount of the at least one first corrosion inhibitor is from about 2.5 ppm to about 50 ppm of the composition.
15. The polishing composition of claim 11 , wherein the at least one first corrosion inhibitor has a molecular weight from about 150 g/mol to about 1100 g/mol.
16. The polishing composition of claim 11 , wherein the at least one complexing agent is selected from the group consisting of organic acids, amines, ammonia, quaternary ammonium compounds, inorganic acids, and salts and mixtures thereof.
17. The polishing composition of claim 11 , wherein the at least one complexing agent is selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, amino acetic acid, phenoxyacetic acid, bicine, diglycolic acid, glyceric acid, tricine, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, benzoic acid, ammonia, 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethanesulfonic acid, benzenesulfonic acid, hydroxylamine O-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, p-toluenesulfonic acid, trifluoromethane-sulfonic acid, ethyl phosphoric acid, cyanoethyl phosphoric acid, phenyl phosphoric acid, vinyl phosphoric acid, poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis (methylphosphonic acid), N,N,N′,N′-ethylenediaminetetrakis(methylene phosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid, phenylphosphonic acid, salts thereof, and mixtures thereof.
18. The polishing composition of claim 11 , wherein the at least one complexing agent is in an amount from about 0.01% to about 20% by weight of the composition.
19. The polishing composition of claim 11 , wherein the at least one second corrosion inhibitor is selected from the group consisting of tetrazole, benzotriazole, tolyltriazole, 5-methylbenzotriazole, ethyl benzotriazole, propyl benzotriazole, butyl benzotriazole, pentyl benzotriazole, hexyl benzotriazole, dimethyl benzotriazole, chloro benzotriazole, dichloro benzotriazole, chloromethyl benzotriazole, chloroethyl benzotriazole, phenyl benzotriazole, benzyl benzotriazole, aminotriazole, aminobenzimidazole, pyrazole, imidazole, aminotetrazole, adenine, benzimidazole, thiabendazole, 1,2,3-triazole, 1,2,4-triazole, 1-hydroxybenzotriazole, 2-methylbenzothiazole, 2-aminobenzimidazole, 2-amino-5-ethyl-1,3,4-thiadazole, 3,5-diamino-1,2,4-triazole, 3-amino-5-methylpyrazole, 4-amino-4H-1,2,4-triazole, and combinations thereof.
20. The polishing composition of claim 11 , wherein the at least one second corrosion inhibitor is in an amount from about 0.0001% to about 5% by weight of the composition.
21. A method of polishing a substrate, comprising:
contacting copper on a surface of the substrate with the polishing composition of claim 1 .