Three-dimensional non-volatile memory floorplan architecture
A three-dimensional (3D) memory includes a first semiconductor structure having a 3D memory array, wherein the 3D memory array includes a plurality of memory planes, and a second semiconductor structure having a plurality of page buffer circuits, wherein each memory plane has a plurality of bit lines oriented in a bit line direction, a memory-plane-boundary, and a fixed location on the first semiconductor structure, each page buffer circuit has a page-buffer-circuit-boundary, the first semiconductor structure and the second semiconductor structure are bonded to each other in a face-to-face orientation, and a first memory-plane-boundary of a first memory plane, and a first page-buffer-circuit-boundary of a first page buffer circuit, are vertically aligned with each other such that a first portion of the first page-buffer-circuit-boundary is offset from the first memory-plane-boundary in the bit line direction so as to be non-overlapping with an area defined by the first memory-plane-boundary.
1. A three-dimensional (3D) memory, comprising:
a first semiconductor structure having a 3D memory array, wherein the 3D memory array includes a plurality of memory planes; and
a second semiconductor structure having a plurality of page buffer circuits,
wherein each memory plane has a plurality of bit lines oriented in a bit line direction, a memory-plane-boundary, and a fixed location on the first semiconductor structure,
wherein each page buffer circuit has a page-buffer-circuit-boundary,
wherein the first semiconductor structure and the second semiconductor structure are bonded to each other in a face-to-face orientation,
wherein a projection of a first page-buffer-circuit-boundary, of a first page buffer circuit, onto the 3D memory array partially overlaps a first portion of an area defined by a first memory-plane-boundary and partially overlaps an area defined by a first portion of a second memory-plane-boundary, wherein the first memory-plane-boundary and the second memory-plane-boundary are adjacent in a first direction,
wherein a projection of a second page-buffer-circuit-boundary, of a second page buffer circuit, onto the 3D memory array overlaps a second portion of the area defined by the first memory-plane-boundary, and wherein the first direction is the bit line direction, and
wherein the projection of the second page-buffer-circuit-boundary onto the 3D memory array is adjacent in the bit line direction to a projection of a pad circuit onto the 3D memory array.
2. The 3D memory of claim 1 , wherein the second semiconductor structure further includes the pad circuit.
3. The 3D memory of claim 1 , further comprising:
a first bonding dielectric layer, having a plurality of electrically conductive first bonding contacts, disposed above the 3D memory array of the first semiconductor structure; and
a second bonding dielectric layer, having a plurality of electrically conductive second bonding contacts, disposed above the plurality of page buffer circuits of the second semiconductor structure,
wherein a first memory plane of the plurality of memory planes on the first semiconductor structure is electrically coupled to a first page buffer circuit on the second semiconductor structure through at least one first bonding contact and at least one second bonding contact.
4. The 3D memory of claim 3 , wherein the at least one first bonding contact and the at least one second bonding contact each comprise copper.
5. The 3D memory of claim 3 , wherein a first bit line of the first memory plane of the plurality of memory planes on the first semiconductor structure is electrically coupled to the first page buffer circuit on the second semiconductor structure through at least one of the plurality of electrically conductive first bonding contacts and at least one of the plurality of electrically conductive second bonding contacts.
6. The 3D memory of claim 1 , wherein each memory plane comprises floating gate flash memory cells.
7. The 3D memory of claim 1 , wherein each memory plane comprises charge-trapping flash memory cells.
8. The 3D memory of claim 1 , further comprising:
a third page buffer circuit, of the plurality of page buffer circuits, having a third page-buffer-circuit-boundary; and
a fourth page buffer circuit, of the plurality of page buffer circuits, having a fourth page-buffer-circuit-boundary,
wherein an area defined by the third page-buffer-circuit-boundary is completely overlapped by an area defined by the second memory-plane boundary, an area defined by the fourth page-buffer-circuit-boundary is completely overlapped by the area defined by the second memory-plane-boundary.
9. A method of making a three-dimensional (3D) memory, comprising:
providing a first semiconductor structure having a 3D memory array, wherein the 3D memory array includes a plurality of memory planes wherein each memory plane has a plurality of bit lines disposed in a bit line direction;
forming, above the 3D memory array, one or more interconnect layers;
forming, above the one or more interconnect layers, a first bonding dielectric layer having a plurality of electrically conductive first bonding contacts;
providing a second semiconductor structure having a plurality of page buffer circuits; and
bonding the first semiconductor structure and the second semiconductor structure in a face-to-face orientation, such that at least one page buffer circuit of the plurality of page buffer circuits is vertically aligned with a corresponding memory plane of the plurality of memory planes such that the at least one page buffer circuit projection of the plurality of page buffer circuits crosses, in the bit line direction, a memory-plane-boundary of the corresponding memory plane,
wherein the one or more interconnect layers provide at least a portion of at least one electrically conductive path between a bit line of the 3D memory array and a first bonding contact of the first bonding dielectric layer.
10. The method of claim 9 , further comprising:
forming, above the plurality of page buffer circuits, one or more interconnect layers; and
forming a second bonding dielectric layer having a plurality of electrically conductive second bonding contacts disposed above the one or more interconnect layers,
wherein the one or more interconnect layers provide at least a portion of at least one electrically conductive path between a first page buffer circuit and a second bonding contact of the second bonding dielectric layer.
11. The method of claim 9 , wherein the 3D memory array is a non-volatile memory array.
12. The method of claim 9 , wherein the 3D memory array is a flash memory array.
13. The method of claim 9 , further comprising:
placing a first page buffer circuit at a location on the second semiconductor structure such that, subsequent to bonding, the first page buffer circuit is vertically aligned with a first memory plane such that a first portion of the first page buffer circuit is non-overlapping with the first memory plane in a bit line direction.
14. A memory system, comprising:
a memory controller device; and
a plurality of non-volatile memory devices coupled to the memory controller device,
wherein at least one of the non-volatile memory devices comprises:
a first semiconductor structure having a three-dimensional (3D) memory array, wherein the 3D memory array includes a plurality of memory planes; and
a second semiconductor structure having a plurality of page buffer circuits,
wherein each memory plane has a plurality of bit lines oriented in a bit line direction, and has a memory-plane-boundary,
wherein each page buffer circuit has a page-buffer-circuit-boundary,
wherein the first semiconductor structure and the second semiconductor structure are bonded to each other in a face-to-face orientation,
wherein a first memory-plane-boundary and a first page-buffer-circuit-boundary are vertically aligned with each other such that the first page-buffer-circuit-boundary is offset from the first memory-plane-boundary in the bit line direction, and such that a first portion of the first page-buffer-circuit-boundary is non-overlapping with an area defined by the first memory-plane-boundary,
wherein a second page-buffer-circuit-boundary is overlapping the first memory-plane-boundary, and
wherein the second page-buffer-circuit-boundary is vertically adjacent to a projection of a pad circuit onto the 3D memory array.
15. The memory system of claim 14 , wherein a second portion of the first page-buffer-circuit-boundary overlaps with a portion of the area defined by the first memory-plane-boundary.
16. The memory system of claim 15 , wherein at least one of the non-volatile memory devices further comprises:
a first bonding dielectric layer, having a plurality of electrically conductive first bonding contacts; and
a second bonding dielectric layer, having a plurality of electrically conductive second bonding contacts.
17. The memory system of claim 16 , wherein an electrically conductive path between at least one bit line and at least one page buffer circuit includes a first one of the plurality of electrically conductive first bonding contacts and a first one of the plurality of electrically conductive second bonding contacts.
18. The memory system of claim 14 , wherein the first page-buffer-circuit-boundary and the second page-buffer-circuit-boundary are not overlapped.
19. The memory system of claim 14 , wherein the second page-buffer-circuit-boundary is adjacent in the bit line direction to the projection of the pad circuit onto the 3D memory array.
20. The memory system of claim 14 , wherein the second semiconductor structure further includes the pad circuit.