Method for verification of conductivity type of silicon wafer
The present application provides a method for verification of conductivity type of a silicon wafer. The method comprises measuring the resistivity of the silicon wafer to obtain a first resistivity, placing the silicon wafer under atmosphere of air for a predicted time period, measuring the resistivity of the silicon wafer to obtain a second resistivity, and determining conductivity type of the silicon wafer by comparing the first resistivity and the second resistivity. The method can be applied to a silicon wafer having a high resistivity such as higher than 500 ohm −cm to rapidly and accurately determine conductivity type of the silicon wafer. Advantages of the method of the present application include accurate test results, easy operation, simple device requirement, and reduced cost.
1. A method for verification of conductivity type of a silicon wafer comprising:
conducting a rapid thermal treatment to the silicon wafer to remove thermal donors before obtaining a first resistivity,
measuring the resistivity of the silicon wafer to obtain the first resistivity,
after the measurement of the first resistivity, placing the silicon wafer under atmosphere of air for a predicted time period to make chemical adsorption occur on a surface of the silicon wafer, wherein the predicted time period is 1-168 hours (h),
after the predicted time period of the placing, measuring the resistivity of the silicon wafer to obtain a second resistivity, and
determining conductivity type of the silicon wafer by comparing the first resistivity and the second resistivity, wherein the silicon wafer is determined as N-type while the first resistivity is smaller than the second resistivity; and, the silicon wafer is determined as P-type while the first resistivity is larger than the second resistivity,
wherein the silicon wafer has a resistivity of higher than 500 ohm −cm .
2. The method of claim 1 , wherein the rapid thermal treatment is conducted at 750° C.-1250° C. for 30-50 seconds(s).
3. The method of claim 1 , wherein the first resistivity and the second resistivity of the silicon wafer are measured by in-line four-point probe.
4. The method of claim 1 , wherein the silicon wafer has a resistivity of higher than 500 ohm −cm .
5. The method of claim 1 , wherein the silicon wafer is a monocrystalline silicon wafer.
6. The method of claim 1 , wherein the silicon wafer is placed under atmosphere of air for a predicted time period to make natural oxidation on a surface of the silicon wafer.