Semiconductor integrated circuit device
Provided is a semiconductor integrated circuit device including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the device easy. A standard cell having no logical function is disposed adjacent to a standard cell having a logical function. The standard cell includes nanowire FETs having nanowires and pads. The standard cell further includes dummy pads, which have no contribution to a logical function of a circuit.
1. A semiconductor integrated circuit device, comprising:
a first standard cell including a first nanowire field effect transistor (FET) in a first type transistor area and a second nanowire FET in a second type transistor area and having a logical function; and
a second standard cell disposed adjacent to the first standard cell in a first direction,
wherein the first nanowire FET includes:
a first pad and a second pad,
a plurality of first nanowires extending in the first direction and each connected to the first and second pads,
the second nanowire FET includes:
a third pad and a fourth pad,
a plurality of second nanowires extending in the first direction and each connected to the third and fourth pads, and
the second standard cell includes:
a first dummy pad and a second dummy pad in the first type transistor area,
a plurality of third nanowires extending in the first direction and each connected to the first and second dummy pads,
a third dummy pad and a fourth dummy pad in the second type transistor area, and
a plurality of fourth nanowires extending in the first direction and each connected to the third and fourth dummy pads,
the first, second, third and fourth dummy pads, the plurality of third nanowires and the plurality of fourth nanowires having no contribution to a logical function of a circuit, and
the first pad and the second pad are arranged at a first pitch in the first direction, the third pad and the fourth pad are arranged at the first pitch in the first direction, the first dummy pad and the second dummy pad are arranged at the first pitch in the first direction, and the third dummy pad and the fourth dummy pad are arranged at the first pitch in the first direction.
2. The semiconductor integrated circuit device of claim 1 , the first standard cell further comprising:
a fifth pad, and
a plurality of fifth nanowires extending in the first direction and each connected to the second and fifth pads,
the second pad and the fifth pad are arranged at the first pitch in the first direction.
3. The semiconductor integrated circuit device of claim 1 , the first standard cell further comprising a first gate line extending in a second direction perpendicular to the first direction and surrounding a periphery of the plurality of first nanowires, and a second gate line extending in the second direction and surrounding a periphery of the plurality of second nanowires.
4. The semiconductor integrated circuit device of claim 3 , the plurality of first nanowires are arranged in a third direction perpendicular to the first and second direction, and the plurality of second nanowires are arranged in the third direction.
5. The semiconductor integrated circuit device of claim 3 , the second standard cell further comprising a first dummy gate line extending in the second direction between the first dummy pad and the second dummy pad and a second dummy gate line extending in the second direction between the third dummy pad and the fourth dummy pad.
6. A semiconductor integrated circuit device, comprising:
a first standard cell including a first nanowire field effect transistor (FET) in a first type transistor area and a second nanowire FET in a second type transistor area and having a logical function; and
a cell-row-terminating cell disposed adjacent to the first standard cell in a first direction,
wherein the first nanowire FET includes:
a first pad and a second pad, and
a plurality of first nanowires extending in the first direction and each connected to the first and second pads,
the second nanowire FET includes:
a third pad and a fourth pad, and
a plurality of second nanowires extending in the first direction and each connected to the third and fourth pads, and
the cell-row-terminating cell includes:
a first dummy pad and a second dummy pad in the first type transistor area,
a plurality of third nanowires extending in the first direction and each connected to the first and second dummy pads,
a third dummy pad and a fourth dummy pad in the second type transistor area, and
a plurality of fourth nanowires extending in the first direction and each connected to the third and fourth dummy pads,
the first, second, third and fourth dummy pads, the plurality of third nanowires and the plurality of fourth nanowires having no contribution to a logical function of a circuit, and
the first pad and the second pad are arranged at a first pitch in the first direction, the third pad and the fourth pad are arranged at the first pitch in the first direction, the first dummy pad and the second dummy pad are arranged at the first pitch in the first direction, and the third dummy pad and the fourth dummy pad are arranged at the first pitch in the first direction.
7. The semiconductor integrated circuit device of claim 6 , the first standard cell further comprising:
a fifth pad, and
a plurality of fifth nanowires extending in the first direction and each connected to the second and fifth pads,
the second pad and the fifth pad are arranged at the first pitch in the first direction.
8. The semiconductor integrated circuit device of claim 6 , the first standard cell further comprising a first gate line extending in a second direction perpendicular to the first direction and surrounding a periphery of the plurality of first nanowires, and a second gate line extending in the second direction and surrounding a periphery of the plurality of second nanowires.
9. The semiconductor integrated circuit device of claim 8 , the plurality of first nanowires are arranged in a third direction perpendicular to the first and second direction, and the plurality of second nanowires are arranged in the third direction.
10. The semiconductor integrated circuit device of claim 8 , the cell-row-terminating cell further comprising a first dummy gate line extending in the second direction between the first dummy pad and the second dummy pad and a second dummy gate line extending in the second direction between the third dummy pad and the fourth dummy pad.
11. A semiconductor integrated circuit device, comprising:
a first standard cell including a first nanowire field effect transistor (FET) in a first type transistor area and a second nanowire FET in a second type transistor area and having a logical function; and
a second standard cell disposed adjacent to the first standard cell in a first direction,
wherein the first nanowire FET includes:
a first pad and a second pad, and
a plurality of first nanowires extending in the first direction and each connected to the first and second pads,
the second nanowire FET includes:
a third pad and a fourth pad, and
a plurality of second nanowires extending in the first direction and each connected to the third and fourth pads, and
the second standard cell includes:
a first dummy pad and a second dummy pad in the first type transistor area,
a plurality of third nanowires extending in the first direction and each connected to the first and second dummy pads,
a third dummy pad and a fourth dummy pad in the second type transistor area, and
a plurality of fourth nanowires extending in the first direction and each connected to the third and fourth dummy pads,
the first, second, third and fourth dummy pads, the plurality of third nanowires and the plurality of fourth nanowires having no contribution to a logical function of a circuit, and
the first standard cell is supplied with first and second power supply potentials, and the first dummy pad is supplied with the first power supply potential.
12. The semiconductor integrated circuit device of claim 11 , the first standard cell further comprising:
a fifth pad, and
a plurality of fifth nanowires extending in the first direction and each connected to the second and fifth pads,
the second pad and the fifth pad are arranged at the first pitch in the first direction.
13. The semiconductor integrated circuit device of claim 11 , the first standard cell further comprising a first gate line extending in a second direction perpendicular to the first direction and surrounding a periphery of the plurality of first nanowires, and a second gate line extending in the second direction and surrounding a periphery of the plurality of second nanowires.
14. The semiconductor integrated circuit device of claim 13 , the plurality of first nanowires are arranged in a third direction perpendicular to the first and second direction, and the plurality of second nanowires are arranged in the third direction.
15. The semiconductor integrated circuit device of claim 13 , the second standard cell further comprising a first dummy gate line extending in the second direction between the first dummy pad and the second dummy pad and a second dummy gate line extending in the second direction between the third dummy pad and the fourth dummy pad.
16. The semiconductor integrated circuit device of claim 11 , wherein the first pad and the second pad are arranged at a first pitch in the first direction, the third pad and the fourth pad are arranged at the first pitch in the first direction, the first dummy pad and the second dummy pad are arranged at the first pitch in the first direction, and the third dummy pad and the fourth dummy pad are arranged at the first pitch in the first direction.
17. The semiconductor integrated circuit device of claim 11 , wherein the third dummy pad is supplied with the second power supply potential.
18. The semiconductor integrated circuit device of claim 15 , wherein the first dummy gate line is supplied with the second power supply potential.