Substrate processing apparatus and substrate processing method
A substrate processing apparatus 5 includes a holder 52 ( 52 A), a supply 53 and a cover body 6 . The holder 52 ( 52 A) is configured to attract and hold a substrate W. The supply 53 is configured to supply a heated plating liquid to the substrate W attracted to and held by the holder 52 ( 52 A). The cover body 6 is configured to cover the substrate W attracted to and held by the holder 52 ( 52 A), and heat the plating liquid on the substrate W by using a heating device 63 provided in a ceiling member 61 thereof facing a top surface of the substrate W. The holder 52 ( 52 A) includes protrusions 130 projecting from a facing surface 110 thereof facing a bottom surface of the substrate W toward the bottom surface of the substrate W, and each protrusion has a protruding height equal to or larger than 1 mm.
1. A substrate processing apparatus, comprising:
a holder configured to attract and hold a substrate;
a supply configured to supply a heated plating liquid to the substrate attracted to and held by the holder; and
a cover body configured to cover the substrate attracted to and held by the holder, and configured to heat the plating liquid on the substrate by using a heating device provided in a ceiling member thereof facing a top surface of the substrate,
wherein the holder is provided with multiple protrusions projecting from a facing surface thereof facing a bottom surface of the substrate toward the bottom surface of the substrate, and each protrusion has a protruding height equal to or larger than 1 mm relative to the facing surface, and
the holder is configured to attract and hold the substrate such that the bottom surface of the substrate is in contact with upper end surfaces of the multiple protrusions.
2. The substrate processing apparatus of claim 1 ,
wherein the multiple protrusions have an annular shape when viewed from a top, and are arranged concentrically.
3. The substrate processing apparatus of claim 2 ,
wherein a first width, which is a width of the protrusion in a diametrical direction, is smaller than a second width which is a width between the adjacent protrusions in the diametrical direction.
4. The substrate processing apparatus of claim 3 ,
wherein a ratio of the first width to the second width is equal to or less than 0.1.
5. The substrate processing apparatus of claim 1 ,
wherein the heating device comprises multiple individual heating elements that are arranged concentrically and configured to be temperature-controlled individually.
6. The substrate processing apparatus of claim 1 ,
wherein the holder is made of a carbon PEEK resin.
7. The substrate processing apparatus of claim 2 ,
wherein the heating device comprises multiple individual heating elements that are arranged concentrically and configured to be temperature-controlled individually.
8. A substrate processing method for use with the apparatus of claim 1 , the method comprising:
attracting and holding a substrate by using a holder which is provided with multiple protrusions projecting from a facing surface thereof positioned under the substrate toward a bottom surface of the substrate, and each protrusion having a protruding height equal to or larger than 1 mm, wherein the holder is configured to attract and hold the substrate such that the bottom surface of the substrate is in contact with upper end surfaces of the multiple protrusions;
supplying a heated plating liquid to the attracted/held substrate;
covering the substrate with a cover body before or after the supplying of the plating liquid; and
heating the plating liquid on the substrate by using a heating device provided in a ceiling member of the cover body facing a top surface of the substrate, while keeping the substrate covered with the cover body.
9. A substrate processing method for use with the apparatus of claim 1 , the method comprising:
attracting and holding a substrate by using a holder which is provided with multiple protrusions each projecting from a facing surface thereof positioned under the substrate toward a bottom surface of the substrate, and each protrusion having a protruding height equal to or larger than 1 mm, wherein the holder is configured to attract and hold the substrate such that the bottom surface of the substrate is in contact with upper end surfaces of the multiple protrusions; and
supplying a processing liquid to the attracted/held substrate.
10. A substrate processing apparatus, comprising:
a holder configured to attract and hold a substrate;
a supply configured to supply a heated plating liquid to the substrate attracted to and held by the holder; and
a cover body configured to cover the substrate attracted to and held by the holder, and configured to heat the plating liquid on the substrate by using a heating device provided in a ceiling member thereof facing a top surface of the substrate,
wherein the holder is provided with multiple protrusions projecting from a facing surface thereof facing a bottom surface of the substrate toward the bottom surface of the substrate, and each protrusion has a protruding height equal to or larger than 1 mm,
the heating device comprises multiple individual heating elements that are arranged concentrically and configured to be temperature-controlled individually,
the holder has a diameter smaller than that of the substrate, and is disposed to be concentric with the multiple individual heating elements, and
when a first heating element located directly above the holder among the multiple individual heating elements is assumed to have a diameter A and a distance between the first heating element and a second heating element adjacent to the first heating element among the multiple individual heating elements is assumed to be a distance B, the diameter of the holder may be equal to or larger than A−(B/2) and equal to or less than A+(B/2).
11. The substrate processing apparatus of claim 10 ,
wherein the diameter of the holder is equal to the diameter of the first heating element.
12. The substrate processing apparatus of claim 10 ,
wherein the multiple protrusions have an annular shape when viewed from a top, and are arranged concentrically.
13. The substrate processing apparatus of claim 12 ,
wherein a first width, which is a width of the protrusion in a diametrical direction, is smaller than a second width which is a width between the adjacent protrusions in the diametrical direction.
14. The substrate processing apparatus of claim 13 ,
wherein a ratio of the first width to the second width is equal to or less than 0.1.
15. The substrate processing apparatus of claim 10 ,
wherein the holder is made of a carbon PEEK resin.