Semiconductor device with phosphorus-doped epitaxial features
A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures is provided. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.
1. A semiconductor device, comprising:
a first fin structure and a second fin structure extending vertically from a substrate and along a first direction in a top view and having an isolation region interposing the first fin structure and the second fin structure in the first direction, wherein an upper surface of the isolation region has a concave region, and the upper surface of the isolation region has a substantially planar region underlying a spacer element abutting the first fin structure;
a gate structure over a first region of a top surface of each of the first fin structure and the second fin structure, the gate structure extending in a second direction in the top view, the second direction perpendicular to the first direction; and
a silicon phosphide (SiP) epitaxial source/drain feature adjacent the gate structure, wherein the silicon phosphide (SiP) epitaxial source/drain feature extends over the first fin structure and the second fin structure, wherein the SiP epitaxial source/drain feature includes a top surface above the isolation region between the first and second fin structures higher than the first region of the top surface of the first fin structure and the second fin structure, the SiP epitaxial source/drain feature including:
a first region disposed over the first fin structure having a first phosphorus concentration, wherein the first region has a U-shape disposed above the first fin structure in a cross-sectional view extending in the second direction spaced a distance from the gate structure;
a second region disposed over the first region, the second region having a second phosphorus concentration, the second phosphorus concentration greater than the first region; and
a third region disposed over the second region, the third region having a third phosphorus concentration.
2. The semiconductor device of claim 1 , wherein the SiP epitaxial source/drain feature has a merge point between the isolation region and the top surface of the SiP epitaxial source/drain feature.
3. The semiconductor device of claim 2 , wherein the merge point is approximately 40%-60% of a height of the first fin structure above a bottom of the SiP epitaxial source/drain feature.
4. The semiconductor device of claim 1 , further comprising: spacers elements interfacing the first region of the SiP epitaxial source/drain feature.
5. The semiconductor device of claim 1 , further comprising: a contact structure interfacing the top surface of the SiP epitaxial source/drain feature, the top surface being of the third region of the SiP epitaxial source/drain feature.
6. The semiconductor device of claim 1 , wherein the first region of the SiP epitaxial source/drain feature interfaces a recessed portion of the first fin structure such that the U-shape interfaces a curved upper surface of the recessed portion.
7. The semiconductor device of claim 1 , wherein the upper surface of the isolation region directly interfaces the spacer element abutting the first fin structure.
8. A semiconductor device, comprising:
a substrate including a first fin element and a second fin element extending from the substrate;
an isolation structure extending between the first fin element and the second fin element;
a gate structure formed over the first fin element and the second fin element; and
a source/drain feature adjacent the gate structure and over the first fin element and the second fin element, wherein the source/drain feature has a top surface having a first height above a plane defined by a top surface of the first fin element and a second height above the plane, and a third height above the plane, wherein the first height is defined over the first fin element and the third height is defined over the second fin element, and the second height is defined over the isolation structure, wherein a ratio of the second height to the first height is approximately 0.5 to 0.9, and wherein the source/drain feature includes three portions each having a different phosphorus doping concentrations.
9. The semiconductor device of claim 8 , further comprising: an air gap under the source/drain feature, wherein the air gap extends to a merge point that is approximately 40%-60% of a height of the first fin element above a bottom of the source/drain feature.
10. The semiconductor device of claim 9 , wherein the second height is measured at a point vertically aligned with the merge point.
11. The semiconductor device of claim 8 , wherein the three portions of the source/drain feature each having the different phosphorus doping concentration together provide a lower phosphorus concentration nearer the first fin element and a higher phosphorus concentration near an upper surface of the source/drain feature.
12. A semiconductor device, comprising:
a first fin structure and a second fin structure each extending from a substrate;
an isolation region interposing the first fin structure and the second fin structure;
fin spacers on the isolation region and abutting the first fin structure and the second fin structure;
a gate structure over each of the first fin structure and the second fin structure; and
a source/drain feature adjacent the gate structure and on the first fin structure and the second fin structure, wherein the source/drain feature is a Si:P feature including three regions:
a first region having a first concentration of phosphorus, wherein the first region has a bottommost surface higher than a plane extending from an uppermost surface of the isolation region;
a second region on the first region and having a second concentration of phosphorus, the second concentration of phosphorus higher than the first concentration of phosphorus; and
a third region on the second region and having a third concentration of phosphorus, the third concentration of phosphorus higher than the second concentration of phosphorus, wherein each of the first region, the second region and the third region interface a portion of the fin spacers.
13. The semiconductor device of claim 12 , wherein the third concentration is Si:P having a P doping concentration of about 3.8-4.2×10 21 atoms/cm 3 .
14. The semiconductor device of claim 13 , wherein the second concentration is Si:P having a P doping concentration of about 2.8×10 21 to about 3.2×10 21 atoms/cm 3 .
15. The semiconductor device of claim 14 , wherein the first concentration is Si:P having a P doping concentration of about 5×10 20 to about 2×10 21 atoms/cm 3 .
16. The semiconductor device of claim 12 , wherein the first region having the first concentration has a U-shape.
17. The semiconductor device of claim 12 , further comprising:
a contact structure over the source/drain feature, wherein the contact structure interfaces the third region of the Si:P feature.
18. The semiconductor device of claim 12 , wherein the Si:P feature has a merge point over the isolation region, and wherein the merge point is in the second region.
19. The semiconductor device of claim 18 , further comprising: an air gap below the merge point and above the isolation region.
20. The semiconductor device of claim 12 , wherein the isolation region between the first fin structure and the second fin structure includes a curvilinear surface.