High performance image sensor
View Patent ↗The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a masking layer on a first side of a substrate. A first etching process is performed on the first side of the substrate with the masking layer in place. The masking layer is removed. A second wet etching process is performed on the first side of the substrate after removing the masking layer. The first etching process and the second wet etching process collectively form a plurality of topographical features respectively having a triangular shape in a cross-section.
1. A method of forming an integrated chip, comprising:
forming a masking layer on a first side of a substrate;
performing a first etching process on the first side of the substrate with the masking layer in place;
removing the masking layer; and
performing a second etching process on the first side of the substrate after removing the masking layer, wherein the first etching process and the second etching process collectively form a plurality of topographical features respectively having a triangular shape in a cross-section.
2. The method of claim 1 , wherein the first etching process and the second etching process form a plurality of pyramidal shaped recesses arranged between the plurality of topographical features.
3. The method of claim 1 , wherein the plurality of topographical features are arranged in a plurality of clusters, the plurality of clusters being separated from one another along a first direction and along a second direction, as viewed in a plan-view.
4. The method of claim 3 , wherein the plurality of clusters are separated from one another by a surface of the substrate that continuously wraps around respective ones of the plurality of clusters in closed paths.
5. The method of claim 3 , wherein the plurality of clusters respectively cover a pixel region within the substrate.
6. The method of claim 1 , wherein the second etching process is a wet etching process.
7. The method of claim 1 , wherein the first etching process and the second etching process form a plurality of pyramidal shaped protrusions that respectively have the triangular shape in the cross-section.
8. A method of forming an integrated chip, comprising:
performing a first wet etching process on a first side of a substrate to form a plurality of preliminary topographical features, the plurality of preliminary topographical features above one or more pixel regions of the substrate; and
performing a second wet etching process on the plurality of preliminary topographical features to form a plurality of tapered topographical features respectively having substantially flat surfaces as viewed in a cross-section.
9. The method of claim 8 , wherein the plurality of preliminary topographical features have a minimum width that is a non-zero distance from the first side of the substrate.
10. The method of claim 8 , wherein the plurality of preliminary topographical features respectively have upper and lower regions comprising widths that are tapered in opposing directions.
11. The method of claim 8 , wherein the plurality of preliminary topographical features have larger heights than the plurality of tapered topographical features.
12. The method of claim 8 , wherein the plurality of tapered topographical features are arranged in a plurality of separate groups, the plurality of separate groups being separated from one another by a vertically extending wall of the substrate.
13. The method of claim 12 , wherein the plurality of separate groups are above separate pixel regions of the one or more pixel regions.
14. A method of forming an integrated chip, comprising:
forming a gate structure along a first side of a substrate;
forming a mask on a second side of the substrate opposing the first side;
performing a first etching process on the second side of the substrate according to the mask; and
performing a second etching process on the second side of the substrate after performing the first etching process, wherein the first etching process and the second etching process form straight edges of the substrate that collectively form a plurality of tapered topographical features in a cross-section.
15. The method of claim 14 , further comprising:
forming a photodiode within a pixel region and directly below the plurality of tapered topographical features.
16. The method of claim 14 , further comprising:
removing the mask from the second side of the substrate after performing the first etching process and before performing the second etching process.
17. The method of claim 14 , further comprising:
forming a dielectric material onto and between the plurality of tapered topographical features.
18. The method of claim 17 , further comprising:
forming a color filter onto the dielectric material; and
forming a micro-lens over the color filter.
19. The method of claim 17 , wherein the plurality of tapered topographical features are laterally between one or more isolation structures arranged along opposing sides of a pixel region in the cross-section, the one or more isolation structures wrapping around separate groups of the plurality of tapered topographical features.
20. The method of claim 17 , wherein the second etching process is performed by exposing the substrate to one or more second wet etchants, the one or more second wet etchants comprising hydrofluoric acid, tetramethylammonium hydroxide, or potassium hydroxide.