Adaptive sensing time for memory operations
Methods, systems, and apparatuses include receiving a command directed to a portion of memory. A cycle number for the portion of memory is determined. A group to which the portion of memory belongs is determined. A sensing time is determined using the cycle number and the group. The command is executed using the sensing time.
1. A method comprising:
determining a first group of a plurality of groups to which a portion of memory belongs, wherein the first group is used to determine a sensing time for the portion of memory;
estimating a read window bandwidth for the portion of memory; and
moving the portion of memory from the first group to a second group of the plurality of groups in response to the estimated read window bandwidth satisfying a threshold, wherein the second group is mapped to a larger sensing time than the sensing time associated with the first group.
2. The method of claim 1 , further comprising:
determining a cycle number for the portion of memory, wherein the cycle number is a number of times the portion of memory has been programmed and erased; and
determining the sensing time of a plurality of sensing times using the cycle number and the first group.
3. The method of claim 2 , wherein determining the sensing time comprises retrieving the sensing time from a lookup table that includes the plurality of sensing times wherein the sensing time is associated with the first group and the cycle number.
4. The method of claim 3 , further comprising:
determining a read disturb value for the portion of memory; and
updating the lookup table based on the read disturb value.
5. The method of claim 3 , wherein moving the portion of memory to the second group includes updating the lookup table.
6. The method of claim 1 , wherein estimating the read window bandwidth for the portion of memory includes:
receiving a command directed to the portion of memory; and
executing the command using the sensing time corresponding to the first group.
7. The method of claim 1 , wherein the portion of memory comprises a plurality of cells and wherein the sensing time is a time threshold voltages are applied to determine a value stored in a cell of the plurality of cells.
8. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
determine a first group of a plurality of groups to which a portion of memory belongs, wherein the first group is used to determine a sensing time for the portion of memory;
estimate a read window bandwidth for the portion of memory; and
move the portion of memory from the first group to a second group of the plurality of groups in response to the estimated read window bandwidth satisfying a threshold, wherein the second group is mapped to a larger sensing time than the sensing time associated with the first group.
9. The non-transitory computer-readable storage medium of claim 8 , wherein the processing device is further to:
determine a cycle number for the portion of memory, wherein the cycle number is a number of times the portion of memory has been programmed and erased; and
determine the sensing time of a plurality of sensing times using the cycle number and the first group.
10. The non-transitory computer-readable storage medium of claim 9 , wherein determining the sensing time comprises retrieving the sensing time from a lookup table that includes the plurality of sensing times wherein the sensing time is associated with the first group and the cycle number.
11. The non-transitory computer-readable storage medium of claim 10 , wherein the processing device is further to:
determine a read disturb value for the portion of memory; and
update the lookup table based on the read disturb value.
12. The non-transitory computer-readable storage medium of claim 10 , wherein moving the portion of memory to the second group includes updating the lookup table.
13. The non-transitory computer-readable storage medium of claim 8 , wherein estimating the read window bandwidth for the portion of memory includes:
receiving a command directed to the portion of memory; and
executing the command using the sensing time corresponding to the first group.
14. The non-transitory computer-readable storage medium of claim 8 , wherein the portion of memory comprises a plurality of cells and wherein the sensing time is a time threshold voltages are applied to determine a value stored in a cell of the plurality of cells.
15. A system comprising:
a plurality of memory devices; and
a processing device, operatively coupled with the plurality of memory devices, to:
receive a command directed to a portion of memory; and
determine a first group of a plurality of groups to which the portion of memory belongs, wherein the first group is used to determine a sensing time for the portion of memory;
execute the command using the sensing time corresponding to the first group;
estimate a read window bandwidth for the portion of memory; and
move the portion of memory from the first group to a second group of the plurality of groups in response to the estimated read window bandwidth satisfying a threshold, wherein the second group is mapped to a larger sensing time than the sensing time associated with the first group.
16. The system of claim 15 , wherein the processing device is further to:
determine a cycle number for the portion of memory, wherein the cycle number is a number of times the portion of memory has been programmed and erased; and
determine the sensing time of a plurality of sensing times using the cycle number and the first group.
17. The system of claim 16 , wherein determining the sensing time comprises retrieving the sensing time from a lookup table that includes the plurality of sensing times wherein the sensing time is associated with the first group and the cycle number.
18. The system of claim 17 , wherein the processing device is further to:
determine a read disturb value for the portion of memory; and
update the lookup table based on the read disturb value.
19. The system of claim 17 , wherein moving the portion of memory to the second group includes updating the lookup table.
20. The system of claim 15 , wherein the portion of memory comprises a plurality of cells and wherein the sensing time is a time threshold voltages are applied to determine a value stored in a cell of the plurality of cells.