3D integrated circuit (3DIC) structure
An embodiment bonded integrated circuit (IC) structure includes a first IC structure and a second IC structure bonded to the first IC structure. The first IC structure includes a first bonding layer and a connector. The second IC structure includes a second bonding layer bonded to and contacting the first bonding layer and a contact pad in the second bonding layer. The connector extends past an interface between the first bonding layer and the second bonding layer, and the contact pad contacts a lateral surface and a sidewall of the connector.
1. A method for forming a semiconductor device, the method comprising:
forming, in a first semiconductor structure, a first bonding layer comprising a first dielectric layer and a plurality of protruding contact structures;
forming, in a second semiconductor structure, a second bonding layer comprising a second dielectric layer and a plurality of recess contact structures, wherein each of the plurality of recess contact structures comprises a metal feature, a surface of the metal feature of each of the plurality of recess contact structures having a first recess; and
after forming the first bonding layer and after forming the second bonding layer, bonding the plurality of protruding contact structures with the plurality of recess contact structures such that each of the plurality of protruding contact structures is in contact with the first recess of the surface of a respective recess contact structure.
2. The method of claim 1 , wherein forming the second bonding layer comprises:
forming a second recess in the second dielectric layer;
forming a conductive layer over the second dielectric layer and in the second recess; and
performing a planarization to remove portions of the conductive layer over the second dielectric layer.
3. The method of claim 2 , wherein the second recess extends completely through the second dielectric layer.
4. The method of claim 1 , wherein the plurality of the recess contact structures comprise copper, nickel, gold, tin, silver, aluminum, alloys thereof, or combinations thereof.
5. The method of claim 1 , wherein bonding deforms the plurality of protruding contact structures.
6. The method of claim 1 , wherein, after bonding, the first bonding layer completely covers an upper surface of the plurality of recess contact structures.
7. A method for forming a semiconductor device, the method comprising:
forming a first dielectric layer over a first substrate;
patterning a first recess in the first dielectric layer;
forming a contact pad in the first recess;
forming a second dielectric layer over a second substrate; patterning a second recess in a second dielectric layer;
forming a connector in the second recess, wherein the connector extends past a first surface of the second dielectric layer; and
after the forming the contact pad and after the forming the connector, bonding the first substrate and the second substrate, wherein the first surface of the second dielectric layer faces the first substrate, wherein bonding the first substrate and the second substrate comprises bonding the connector to the contact pad, wherein the connector is partially disposed in the second recess.
8. The method of claim 7 , wherein a surface of the contact pad is level with the first surface of the first dielectric layer.
9. The method of claim 7 , wherein bonding the first substrate to the second substrate comprises bonding the first dielectric layer to the second dielectric layer.
10. The method of claim 7 , wherein bonding the first substrate to the second substrate reshapes the connector.
11. The method of claim 7 , wherein after bonding, the connector contacts a surface of the contact pad at a bottom of the first recess.
12. The method of claim 11 , wherein after bonding, the connector contacts a portion of the contact pad that is in contact with a sidewall of the first recess.
13. The method of claim 7 , wherein the second recess extends completely through the second dielectric layer, and wherein the first recess extends completely through the first dielectric layer.
14. The method of claim 7 , wherein a width of the first recess is greater than a width of the second recess.
15. A method comprising:
forming a first bonding layer on a first semiconductor structure;
forming a first recess in the first bonding layer, the first recess exposing a first conductive feature of the first semiconductor structure;
forming a first contact in the first recess, the first contact comprising a protrusion that protrudes from the first bonding layer;
forming a second bonding layer on a second semiconductor structure;
forming a second recess in the second bonding layer, the second recess exposing a second conductive feature of the second semiconductor structure;
forming a second contact in the second recess, an upper surface of the second contact being below an upper surface of the second bonding layer, wherein the second contact has a U-shape in a cross-sectional view; and
after forming the first contact and after forming the second contact, bonding the protrusion of the first contact to the upper surface of the second contact, wherein after bonding, the protrusion extends into the second recess.
16. The method of claim 15 , wherein bonding comprises bonding the first bonding layer to the second bonding layer, wherein, after bonding, a width of the protrusion level with an interface between the first bonding layer and the second bonding layer is less than a width of the protrusion in the second recess.
17. The method of claim 15 , wherein bonding further comprises bonding the first bonding layer to the second bonding layer.
18. The method of claim 15 , wherein, after bonding, the second contact directly contacts the first bonding layer.
19. The method of claim 15 , wherein, after bonding, the protrusion and the second contact completely fill a bottom of the second recess.
20. The method of claim 15 , wherein, after bonding, the protrusion extends under the second bonding layer such that the protrusion is between the first semiconductor structure and the second contact along a line perpendicular to a major surface of the first bonding layer.