Silicon-on-insulator substrate and method of manufacturing the same
An silicon-on-insulator substrate is provided in the present invention, including a handler, a polysilicon trap-rich layer formed on the handler, an oxide layer formed on the polysilicon trap-rich layer and a monocrystalline silicon layer formed directly on the oxide layer, wherein a bonding interface is between the monocrystalline silicon layer and the oxide layer.
1. A method of manufacturing a silicon-on-insulator substrate, comprising:
forming a carbon-doped polysilicon trap-rich layer on a handler;
forming an organosilane-based oxide layer on said carbon-doped polysilicon trap-rich layer;
bonding a surface of a bulk silicon wafer directly on a surface of said organosilane-based oxide layer, wherein said surface of said bulk silicon wafer has no insulating layer formed thereon, and said bonding comprises:
performing a plasma treatment to said surface of said bulk silicon wafer and said surface of said organosilane-based oxide layer; and
after bonding said surface of said bulk silicon wafer and said surface of said organosilane-based oxide layer, performing a heat treatment to form stronger bonding between said surface of said bulk silicon wafer and said surface of said organosilane-based oxide layer;
performing a thinning process and a trimming process to said bulk silicon wafer through a grinding process to form a monocrystalline silicon layer.
2. The method of manufacturing a silicon-on-insulator substrate of claim 1 , further comprising performing a chemical mechanical polishing process to said organosilane-based oxide layer before bonding said bulk silicon wafer.
3. The method of manufacturing a silicon-on-insulator substrate of claim 1 , wherein comprising performing a carbon doping process to said a polysilicon trap-rich layer to form said carbon-doped polysilicon trap-rich layer.
4. The method of manufacturing a silicon-on-insulator substrate of claim 1 , wherein said handler is a silicon wafer or a glass substrate.