Nanocrystalline graphene and method of forming nanocrystalline graphene
Provided are nanocrystalline graphene and a method of forming the same. The nanocrystalline graphene may include a plurality of grains formed by stacking a plurality of graphene sheets and has a grain density of about 500 ea/μm 2 or higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less. When the nanocrystalline graphene has a grain density and a RMS roughness with these ranges, nanocrystalline graphene capable of covering the entirety of a large area on a substrate as a thin layer may be provided.
1. A nanocrystalline graphene, comprising:
a plurality of grains in a stack of a plurality of graphene sheets,
wherein the nanocrystalline graphene has a grain density of about 500 ea/μm 2 or higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less,
wherein the nanocrystalline graphene is directly grown on a non-catalytic substrate by a plasma chemical vapor deposition process in a reaction chamber using plasma of a reaction gas comprising a carbon source gas and an inert gas at a temperature of about 700° C. or lower, and
wherein, when the nanocrystalline graphene is directly grown during the plasma chemical vapor deposition process, the inert gas is provided into the reaction chamber at a flow rate of in a range of about 600 sccm to about 1600 sccm.
2. The nanocrystalline graphene of claim 1 ,
wherein a thickness of the nanocrystalline graphene is about 10 nm or less.
3. The nanocrystalline graphene of claim 1 ,
wherein a thickness of the nanocrystalline graphene is about 2 nm or less.
4. The nanocrystalline graphene of claim 1 ,
wherein a grain size of the plurality of grains is in a range of about 0.5 nm to about 50 nm.
5. The nanocrystalline graphene of claim 1 ,
wherein in a Raman spectrum of the nanocrystalline graphene,
a D/G peak ratio is about 1.0 or higher, and
a 2D/G ratio is about 0.1 or higher.
6. The nanocrystalline graphene of claim 5 ,
wherein the nanocrystalline graphene is a graphene-on-substrate on the non-catalytic substrate.
7. The nanocrystalline graphene of claim 6 ,
wherein a thickness of the graphene-on-substrate is in a range of about 1 Å to about 100 Å, and about 10% or less of the graphene-on-substrate is a non-uniformity region with an area about 1×1 cm 2 or greater.
8. The nanocrystalline graphene of claim 6 ,
wherein the non-catalytic substrate is material of which bulk solubility of carbon atoms at a temperature of about 1000° C. or lower is about 0.1 or less.
9. The nanocrystalline graphene of claim 6 ,
wherein the non-catalytic substrate comprises at least one of a Group IV semiconductor material, a semiconductor compound, a metal, and an insulating material.
10. The nanocrystalline graphene of claim 9 ,
wherein the Group IV semiconductor material comprises Si, Ge, or Sn;
the semiconductor compound comprises a material in which at least two of Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined;
the metal comprises at least one of Cu, Mo, Ni, Al, W, Ru, Co, Mn, Ti, Ta, Au, Hf, Zr, Zn, Y, Cr, and Gd; and
the insulating material comprises at least one of Si, Al, Hf, Zr, Zn, Ti, Ta, W, and Mn, or
the insulating material comprises at least one of an oxide, a nitride, a carbide, or a derivative of at least one of Si, Ni, Al, W, Ru, Co, Mn, Ti, Ta, Au, Hf, Zr, Zn, Y, Cr, Cu, Mo, and Gd.
11. The nanocrystalline graphene of claim 6 ,
wherein the graphene-on-substrate further comprises a metal layer on the nanocrystalline graphene.
12. The nanocrystalline graphene of claim 1 ,
wherein the nanocrystalline graphene is directly grown on the non-catalytic substrate for a growth time of less than 90 seconds using the plasma chemical vapor deposition process.
13. The nanocrystalline graphene of claim 1 , wherein
wherein, during the plasma chemical vapor deposition process, a power for generating the plasma is in a range of about 10 W to about 400 W, and the inert gas includes argon gas, and
wherein the nanocrystalline graphene is directly grown on the non-catalytic substrate for a growth time of less than 90 seconds using the plasma chemical vapor deposition process.
14. The nanocrystalline graphene of claim 13 ,
wherein the reaction gas does not comprise hydrogen gas.
15. The nanocrystalline graphene of claim 13 ,
wherein when the reaction gas further comprises hydrogen gas.
16. The nanocrystalline graphene of claim 13 ,
wherein the carbon source gas comprises at least one of a hydrocarbon gas and a vapor of a liquid precursor comprising carbon.
17. The nanocrystalline graphene of claim 13 ,
wherein the inert gas comprises at least one of argon gas, neon gas, nitrogen gas, helium gas, krypton gas, and xenon gas.
18. The nanocrystalline graphene of claim 13 ,
wherein the temperature of the plasma chemical vapor deposition process is in a range of about 180° C. to about 700° C. during the plasma chemical vapor deposition process.
19. The nanocrystalline graphene of claim 13 ,
wherein the plasma chemical vapor deposition process is performed at a processing pressure in a range of about 0.001 Torr to about 10 Torr.
20. The nanocrystalline graphene of claim 13 ,
wherein the plasma of the reaction gas is generated using a radio frequency (RF) plasma generating device operating at a frequency range of about 3 MHz to about 100 MHz.
21. A method of forming a nanocrystalline graphene, the method comprising:
injecting a reaction gas comprising a carbon source gas and an inert gas into a reaction chamber;
generating a plasma of the reaction gas in the reaction chamber; and
growing the nanocrystalline graphene directly on a non-catalytic substrate by a plasma chemical vapor deposition process using the plasma of the reaction gas at a temperature of about 700° C. or lower, wherein
when the nanocrystalline graphene is directly grown during the plasma chemical vapor deposition process, the inert gas is provided into the reaction chamber at a flow rate of in a range of about 600 sccm to about 1600 sccm,
the nanocrystalline graphene includes a plurality of grains in a stack of a plurality of graphene sheets,
the nanocrystalline graphene has a grain density of about 500 ea/μm 2 or higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less.
22. The method of claim 21 ,
wherein the generating the plasma of the reaction gas in the reaction chamber is performed using at least one radio frequency (RF) plasma generating device or at least one microwave (MW) plasma generating device.
23. The method of claim 21 ,
wherein the plasma comprises RF plasma having a frequency range of about 3 MHz to about 100 MHz and MW plasma having a frequency range of about 0.7 GHz to about 2.5 GHz.
24. The method of claim 21 further comprising:
pretreating a surface of the non-catalytic substrate using a reducing gas before the growing the nanocrystalline graphene.
25. The method of claim 21 , wherein the growing the nanocrystalline graphene directly on the non-catalytic substrate includes:
forming a first nanocrystalline graphene on the non-catalytic substrate; and
forming a second nanocrystalline graphene on the first nanocrystalline graphene by controlling a mixing ratio of the reaction gas.