Plasma-enhanced chemical vapor deposition methods for graphene deposition
A graphene deposition process. The process includes the steps of placing a substrate into a deposition chamber and heating the chamber, generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate.
1. A graphene deposition process, comprising:
placing a substrate suitable to be heated only up to about 200° C. into a deposition chamber;
heating the chamber up to about 200° C.; and
generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate,
wherein the precursor gas is flown through the plasma and over the substrate for a predetermined period of time, ranging between about 1 to about 30 minutes,
wherein the precursor gas is flown over the substrate at a partial pressure of about 1 mTorr,
wherein the precursor gas is flown over the substrate at a flow rate of about 6 sccm, and
wherein the precursor gas is selected from the group consisting of CH 4 , C 2 H 2 , C 2 H 4 , and C 2 H 6 .
2. The process of claim 1 , the substrate is a metal selected from the group consisting of Copper, Aluminum, Nickel, Titanium, Titanium Nitride, Cobalt, Ruthenium, Platinum, Iridium, and Silver.
3. The process of claim 1 , the substrate is an insulator selected from the group consisting of SiO 2 , Sapphire, MgO, and Quartz.
4. The process of claim 1 , the substrate is a semiconductor selected from the group consisting of Silicon, Silicon Carbide, and GaAs.
5. The process of claim 1 , prior to placing the substrate into the deposition chamber, comprising: washing the substrate with i) solvents; or ii) an etching solution.
6. The process of claim 5 , the solvent is selected from the group consisting of Toluene, Acetone, Methanol and Isopropyl alcohol; and the etching solution is piranha etch.
7. The process of claim 1 , the radio frequency plasma is generated at about 13.56 MHz.
8. The process of claim 1 , the plasma is generated upstream from the substrate.
9. The process of claim 1 , the plasma is generated adjacent to the substrate.
10. The process of claim 1 , the predetermined period of time is between about 1 to about 15 minutes, when the substrate is copper.
11. The process of claim 1 , the predetermined period of time is between about 5 to about 15 minutes, when the substrate is Quartz.
12. The process of claim 1 , the predetermined period of time is between about 10 to about 15 minutes, when the substrate is SiO 2 .