Plasma monitoring system, plasma monitoring method, and monitoring device
A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.
1. A plasma monitoring system for measuring a light emission intensity of a plasma generated in a plasma processing apparatus, the system comprising:
a monitoring device to be placed on a stage in the plasma processing apparatus, the monitoring device including a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma; and
a control device for acquiring light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.
2. The plasma monitoring system according to claim 1 ,
wherein the light emission intensity distribution data is visible display data in which the light emission intensity acquired by each of the plurality of spectroscopes corresponding to each position of the plurality of spectroscopes in the monitoring device is displayed.
3. The plasma monitoring system according to claim 1 ,
wherein a measurement region of light of each of the plurality of spectroscopes in the plasma processing apparatus does not include an overlapping region.
4. The plasma monitoring system according to claim 1 ,
wherein the plurality of spectroscopes are disposed on the base substrate in a point-symmetrical manner in a plan view.
5. The plasma monitoring system according to claim 1 ,
wherein the plurality of spectroscopes are disposed on the base substrate in a line-symmetrical manner in a plan view.
6. The plasma monitoring system according to claim 1 ,
wherein the plurality of spectroscopes are disposed at a plurality of positions in a radial direction of the base substrate.
7. The plasma monitoring system according to claim 1 ,
wherein the plurality of spectroscopes are disposed more densely in a radial direction on a peripheral side of the base substrate than on a center side.
8. The plasma monitoring system according to claim 1 ,
wherein the plurality of spectroscopes are covered with a sapphire cover.
9. A plasma monitoring method of measuring a light emission intensity of a plasma generated in a plasma processing apparatus by using a monitoring device,
in which the monitoring device includes
a plate-shaped base substrate, and
a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other, and
the method comprising:
placing the monitoring device on a stage in a chamber of the plasma processing apparatus;
generating a plasma in the chamber of the plasma processing apparatus;
acquiring light emission intensities of the plasma by the plurality of spectroscopes; and
acquiring light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensities acquired by the plurality of spectroscopes.
10. The plasma monitoring method according to claim 9 ,
wherein the light emission intensities are data acquired for each wavelength of the plasma.
11. The plasma monitoring method according to claim 9 ,
wherein the light emission intensities are data acquired in a time series for each wavelength of the plasma.
12. The plasma monitoring method according to claim 9 ,
wherein the light emission intensity distribution data is a distribution of the light emission intensity for any wavelength at any time.
13. A monitoring device for measuring a light emission intensity of a plasma generated in a plasma processing apparatus, the device comprising:
a plate-shaped base substrate placed on a stage in the plasma processing apparatus;
a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma; and
a control device for acquiring light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.
14. The plasma monitoring device according to claim 13 ,
wherein the plurality of spectroscopes are disposed on the base substrate in a point-symmetrical manner in a plan view.
15. The plasma monitoring device according to claim 13 ,
wherein the plurality of spectroscopes are disposed on the base substrate in a line-symmetrical manner in a plan view.
16. The plasma monitoring device according to claim 7 ,
wherein the plurality of spectroscopes are disposed at a plurality of positions in a radial direction of the base substrate.
17. The plasma monitoring device according to claim 13 ,
wherein the plurality of spectroscopes are disposed more densely in a radial direction on a peripheral side of the base substrate than on a center side.
18. The plasma monitoring device according to claim 13 ,
wherein the plurality of spectroscopes are covered with a sapphire cover.