Semiconductor package and manufacturing method thereof
A semiconductor package capable of reducing or preventing cracks from occurring in a conductive bump and a method for manufacturing the same. The semiconductor package includes a semiconductor chip; a first conductive bump; a first re-distribution layer which is provided between the semiconductor chip and the first conductive bump and electrically connects the semiconductor chip and the first conductive bump; and a buffer structure which formed to fill up a space between a side surface of the first conductive bump and one surface of the first re-distribution layer, in which the buffer structure includes a plurality of pores.
1. A semiconductor package comprising:
a semiconductor chip;
a first conductive bump;
a first re-distribution layer between the semiconductor chip and the first conductive bump and electrically connecting the semiconductor chip and the first conductive bump; and
a buffer structure filling a space between a side surface of the first conductive bump and one surface of the first re-distribution layer,
wherein the buffer structure includes a plurality of pores, wherein the buffer structure includes a polymer that includes a chemical foaming agent.
2. The semiconductor package of claim 1 , wherein the buffer structure covers a neck area of the first conductive bump.
3. The semiconductor package of claim 1 , wherein the polymer fills a groove formed in the first re-distribution layer.
4. The semiconductor package of claim 3 , wherein the groove does not come into contact with a first wiring provided inside the first re-distribution layer to electrically connect the semiconductor chip and the first conductive bump.
5. The semiconductor package of claim 1 , wherein the polymer is configured to expand in reaction to an irradiating beam.
6. The semiconductor package of claim 5 , wherein the irradiating beam is tilted with respect to a longitudinal direction of the first re-distribution layer.
7. The semiconductor package of claim 5 , wherein the polymer is formed into the buffer structure by the irradiating beam reacting with the polymer.
8. The semiconductor package of claim 5 , wherein the polymer is configured to react to the irradiating beam of a UV wavelength band.
9. The semiconductor package of claim 1 , further comprising:
a second conductive bump between the semiconductor chip and the first re-distribution layer,
wherein the buffer structure fills a space between a side surface of the second conductive bump and a second surface of the first re-distribution layer.
10. The semiconductor package of claim 1 , wherein the semiconductor package is one of a package substrate or a circuit board manufactured using a flip chip method.
11. A semiconductor package comprising:
a semiconductor chip;
a first conductive bump;
a first re-distribution layer between the semiconductor chip and the first conductive bump and electrically connecting the semiconductor chip and the first conductive bump; and
a buffer structure filling a space between a side surface of the first conductive bump and one surface of the first re-distribution layer,
wherein the buffer structure includes a plurality of pores, is a polymer including a chemical foaming agent, and is formed by irradiating a beam of a UV wavelength band in a direction in which the polymer is located.